NTMFS4C024N
MOSFET – Power, Single,
N-Channel, SO-8 FL
30 V, 78 A
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
2.8 mW @ 10 V
30 V
78 A
4.0 mW @ 4.5 V
Applications
• CPU Power Delivery
• DC−DC Converters
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
G (4)
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
S (1,2,3)
ID
21.7
A
N−CHANNEL MOSFET
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.57
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
34.8
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
TA = 80°C
16.3
TA = 80°C
Steady
State
TA = 25°C
PD
6.6
W
TA = 25°C
ID
11.9
A
TA = 80°C
8.9
TA = 25°C
PD
0.77
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
78
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
TC =80°C
58
PD
33
W
IDM
174
A
IDmax
80
A
TJ,
TSTG
−55 to
+150
°C
IS
30
A
Drain to Source dV/dt
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 20 V, IL = 41 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
84
mJ
TL
260
°C
TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
26.0
Power Dissipation
RqJA (Note 2)
Pulsed Drain Current
MARKING
DIAGRAMS
1
D
4C024
AYWZZ
D
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Package
Shipping†
NTMFS4C024NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C024NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 1
1
Publication Order Number:
NTMFS4C024N/D
NTMFS4C024N
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 20 V, IL = 29 A, EAS = 42 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Case (Drain)
RqJC
3.8
Junction−to−Ambient – Steady State (Note 4)
RqJA
48.6
Junction−to−Ambient – Steady State (Note 5)
RqJA
161.7
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
19
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
12
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
5.1
mV/°C
VGS = 10 V
ID = 30 A
2.3
2.8
VGS = 4.5 V
ID = 30 A
3.3
4.0
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
68
0.3
1.0
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1972
VGS = 0 V, f = 1 MHz, VDS = 15 V
1215
pF
59
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
14
Threshold Gate Charge
QG(TH)
3.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
5.0
Gate Plateau Voltage
VGP
3.1
V
30
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.030
6.0
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
11
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
32
21
7.0
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2
ns
NTMFS4C024N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
8.0
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26
ns
26
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.77
TJ = 125°C
0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
40.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
20.3
ns
19.9
30.2
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C024N
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
TJ = 25°C
3.8 V
3.6 V
4 V to 6.5 V
ID, DRAIN CURRENT (A)
140
130 10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
5
4
140
130 VDS = 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
2.0
2.5
3.0
3.5
4.0
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
4.0
5.0
6.0
7.0
8.0
9.0
0.008
4.5
TJ = 25°C
0.007
0.006
0.005
VGS = 4.5 V
0.004
VGS = 10 V
0.003
0.002
10
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.7
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
1.5
Figure 1. On−Region Characteristics
Figure 3. On−Resistance vs. VGS
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.4
1.3
1.2
1.1
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4C024N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
2750
2500
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
3000
2250
Ciss
2000
1750
1500
1250
1000
Coss
750
500
250
0
Crss
0
5
10
15
20
25
30
QT
8
6
4
Qgd
Qgs
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
4
8
12
16
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
IS, SOURCE CURRENT (A)
18
td(off)
td(on)
100
tr
tf
10
1
10
16
14
12
10
8
6
4
TJ = 125°C
TJ = 25°C
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
100 ms
1 ms
10
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.5
RG, GATE RESISTANCE (W)
1000
0.01
0.01
0
0.4
100
32
VGS = 0 V
2
0.1
28
Figure 7. Capacitance Variation
20
1
24
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
45
ID = 29 A
40
35
30
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4C024N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
120
ID, DRAIN CURRENT (A)
100
GFS (S)
80
60
40
20
0
0
10
20
30
40
50
60
70
TA = 25°C
1
1.E−07
80
TA = 85°C
10
1.E−06
1.E−05
1.E−04
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
1.E−03
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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