NTMFS4C03N
MOSFET – Power, Single,
N-Channel, SO-8FL
30 V, 2.1 mW, 136 A
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
2.1 mW @ 10 V
30 V
136 A
2.8 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
TC = 25°C
ID
136
A
TC = 25°C
PD
64
W
Parameter
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation
RqJC (Notes 1, 3)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
ID
30
A
TA = 25°C
PD
3.1
W
TA = 25°C, tp = 10 ms
IDM
352
A
TJ, Tstg
−55 to
150
°C
IS
53
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 11 A)
EAS
549
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Drain Current
G (4)
S (1,2,3)
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2, 3)
D (5,6)
Steady
State
Operating Junction and Storage Temperature
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4C03N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Symbol
Value
Unit
Device
Package
Shipping†
Junction−to−Case − Steady State (Note 2)
RqJC
1.95
°C/W
NTMFS4C03NT1G
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C03NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
Parameter
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2014
May, 2019 − Rev. 2
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4C03N/D
NTMFS4C03N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
18.2
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
2.2
4.8
V
mV/°C
VGS = 10 V
ID = 30 A
1.5
2.1
VGS = 4.5 V
ID = 30 A
2.2
2.8
mW
Forward Transconductance
gFS
VDS = 3 V, ID = 30 A
136
S
Gate Resistance
RG
TA = 25 °C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
67
Total Gate Charge
QG(TOT)
20.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
3071
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
1673
pF
4.9
nC
8.5
4.7
QG(TOT)
VGS = 10 V, VDS = 15 V,
ID = 30 A
45.2
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
14
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
32
ns
27
17
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.75
TJ = 125°C
0.6
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
47
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
23
ns
24
39
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C03N
TYPICAL CHARACTERISTICS
250
250
4.5 V
200
ID, DRAIN CURRENT (A)
3.4 V
VGS = 10 V
150
3.2 V
125
100
3.0 V
75
50
2.8 V
25
2.6 V
0.0
0.5
1.0
1.5
2.0
2.5
125
100
75
TJ = 150°C
50
TJ = 25°C
TJ = −55°C
25
0
3.0
1.5
2
2.5
3
3.5
4
Figure 2. Transfer Characteristics
TJ = 25°C
2.6
2.4
2.2
2.0
1.8
1.6
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5
3.0
TJ = 25°C
2.8
2.6
2.4
VGS = 4.5 V
2.2
2.0
1.8
1.6
1.4
10
VGS = 10 V
0
25
50
75
100 125 150 175 200
225 250
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
150
Figure 1. On−Region Characteristics
2.8
1.6
175
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 30 A
3
200
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3.0
1.4
VDS = 3 V
225
3.6 V
175
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
TJ = 25°C
3.8 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
225
1.4
1.2
1.0
TJ = 125°C
1000
TJ = 100°C
TJ = 85°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTMFS4C03N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
Ciss
Coss
1000
100
10
Crss
VGS = 0 V
TJ = 25°C
f = 1 MHz
0.1
1
10
100
QT
10
15
9
8
7
VDS
6
12
VGS
9
5
4
Qgs
3
Qgd
TJ = 25°C
VDS = 15 V
ID = 30 A
2
1
0
5
10
15
20
25
30
35
40
45
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
6
3
0
50
1000.0
VDD = 15 V
ID = 15 A
VGS = 4.5 V
td(off)
100
tf
tr
td(on)
0.1
1
10
IS, SOURCE CURRENT (A)
VGS = 0 V
100
100.0
TJ = 150°C
10.0
TJ = 25°C
1.0
0.1
TJ = −55°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
18
11
0
1000
10
12
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10000
100
100 ms
10
1
0.1
0.01
1 ms
10 ms
VGS ≤ 10 V
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
DC
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTMFS4C03N
TYPICAL CHARACTERISTICS
RqJA Steady State = 40°C/W
Duty Cycle = 50%
10 20%
10%
5%
1 2%
1%
PCB Cu Area = 650 mm2
PCB Cu Thk = 2 oz
0.1
0.01
0.001
1E−06
Single Pulse
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
PULSE TIME (sec)
Figure 12. Thermal Impedance (Junction−to−Ambient)
100
IPEAK, (A)
R(t) (°C/W)
100
TJ(initial) = 25°C
10
TJ(initial) = 100°C
1
1.00E−04
1.00E−03
TIME IN AVALANCHE (s)
Figure 13. Avalanche Characteristics
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5
1.00E−02
1E+01
1E+02
1E+03
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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