NTMFS4C09N
MOSFET – Power, Single,
N-Channel, SO-8 FL
30 V, 52 A
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
5.8 mW @ 10 V
30 V
52 A
8.5 mW @ 4.5 V
Applications
• CPU Power Delivery
• DC−DC Converters
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
G (4)
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
S (1,2,3)
ID
16.4
A
N−CHANNEL MOSFET
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.51
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
25.3
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
TA = 80°C
12.3
TA = 80°C
TA = 25°C
Steady
State
TA = 25°C
PD
ID
TA = 80°C
6.0
W
1
9.0
A
6.8
TA = 25°C
PD
0.76
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
52
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
25.5
W
TA = 25°C, tp = 10 ms
IDM
146
A
IDmax
80
A
TJ,
TSTG
−55 to
+150
°C
IS
23
A
Drain to Source dV/dt
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
42
mJ
TL
260
°C
TC =80°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
19.0
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
MARKING
DIAGRAMS
D
4C09N
AYWZZ
D
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
39
Device
Package
Shipping†
NTMFS4C09NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C09NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
May, 2019 − Rev. 5
1
Publication Order Number:
NTMFS4C09N/D
NTMFS4C09N
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 20 Apk, EAS = 20 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Case (Drain)
RqJC
4.9
Junction−to−Ambient – Steady State (Note 4)
RqJA
49.8
Junction−to−Ambient – Steady State (Note 5)
RqJA
164.6
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
21.0
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 8.4 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.4
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.1
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
4.8
mV/°C
VGS = 10 V
ID = 30 A
4.6
5.8
VGS = 4.5 V
ID = 18 A
6.8
8.5
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
50
0.3
1.0
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
1252
VGS = 0 V, f = 1 MHz, VDS = 15 V
610
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.101
CRSS
126
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
10.9
Threshold Gate Charge
QG(TH)
1.9
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Plateau Voltage
Total Gate Charge
pF
VGS = 4.5 V, VDS = 15 V; ID = 30 A
3.4
nC
5.4
VGP
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
3.1
V
22.2
nC
NTMFS4C09N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
32
tf
6.0
td(ON)
7.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
16
28
ns
20
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.79
TJ = 125°C
0.65
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
31
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
15
16
15
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
3
ns
nC
NTMFS4C09N
TYPICAL CHARACTERISTICS
4.5 V to 10 V
TJ = 25°C
80
90
3.8 V
70
3.6 V
60
3.4 V
50
40
3.2 V
30
3.0 V
20
2.8 V
VGS = 2.6 V
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
100
4.0 V
0
1
2
3
4
60
50
40
30
20
TJ = 125°C
TJ = −55°C
TJ = 25°C
0
0.5 1.0 1.5 2.0
2.5 3.0
3.5 4.0
4.5 5.0 5.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
0.018
0.016
0.014
0.012
0.010
4
5
6
7
8
9
10
0.009
0.008
TJ = 25°C
VGS = 4.5 V
0.007
0.006
0.005
VGS = 10 V
0.004
0.003
10
20
30
40
50
60
70
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1600
1.7
1.6
1.5
VGS = 10 V
ID = 30 A
1400
C, CAPACITANCE (pF)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
70
0
5
0.020
3
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.026
0.024
0.022
0.008
0.006
0.004
0.002
VDS = 5 V
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
90
ID, DRAIN CURRENT (A)
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
1200
1000
Coss
800
600
400
Crss
200
−25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 25°C
Ciss
0
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
www.onsemi.com
4
30
NTMFS4C09N
1000
10
VGS = 10 V
VDD = 15 V
ID = 15 A
QT
8
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
6
QGD
QGS
4
VGS = 10 V
VDD = 15 V
ID = 30 A
TJ = 25°C
2
0
0
2
4
6
8
10 12 14
16
18
1
100
RG, GATE RESISTANCE (W)
1000
0 V < VGS < 10 V
VGS = 0 V
ID, DRAIN CURRENT (A)
16
14
TJ = 25°C
TJ = 125°C
12
10
8
6
4
0.4
0.5
0.6
0.7
0.8
0.9
100
10 ms
100 ms
10
1 ms
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
1.0
0.01
0.1
dc
1
10
100
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
80
20
18
ID = 20 A
70
16
60
14
12
10
8
6
50
40
30
20
4
2
0
10
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
GFS (S)
IS, SOURCE CURRENT (A)
td(on)
QG, TOTAL GATE CHARGE (nC)
18
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
10
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
2
0
td(off)
tf
tr
1
22 24
20
100
10
25
50
75
100
125
150
0
0
5
10
15
20
25
30
35
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID (A)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
Figure 12. GFS vs. ID
www.onsemi.com
5
40
45
50
NTMFS4C09N
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
1
1.E−08 1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
PULSE WIDTH (sec)
Figure 13. Avalanche Characteristics
100
Duty Cycle = 0.5
R(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
PULSE TIME (sec)
Figure 14. Thermal Response
www.onsemi.com
6
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative