NTMFS4C13NT3G

NTMFS4C13N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 9.1 mW @ 10 V 30 V 38 A 13.8 mW @ 4.5 V • CPU Power Delivery • DC−DC Converters D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 13.0 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.46 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 19.1 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 80°C N−CHANNEL MOSFET D 5.32 W 1 TA = 25°C ID TA = 80°C 7.2 A 5.4 TA = 25°C PD 0.75 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 38 A Power Dissipation RqJC (Note 1) TC = 25°C PD 21.6 W TA = 25°C, tp = 10 ms IDM 106 A TC =80°C Current Limited by Package MARKING DIAGRAM 14.3 PD Power Dissipation RqJA (Note 2) Pulsed Drain Current S (1,2,3) 9.7 TA = 80°C Steady State G (4) TA = 25°C 29 IDmax 70 A TJ, TSTG −55 to +150 °C IS 19 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 21 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 22 mJ TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C13N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping† NTMFS4C13NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C13NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2013 May, 2019 − Rev. 2 1 Publication Order Number: NTMFS4C13N/D NTMFS4C13N 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 15 Apk, EAS = 11 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Case (Drain) RqJC 5.8 Junction−to−Ambient – Steady State (Note 4) RqJA 50.8 Junction−to−Ambient – Steady State (Note 5) RqJA 166.6 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 23.5 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 6.1 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.9 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 4.8 mV/°C VGS = 10 V ID = 30 A 7.3 9.1 VGS = 4.5 V ID = 12 A 11.4 13.8 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25°C 40 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 770 VGS = 0 V, f = 1 MHz, VDS = 15 V 443 pF 127 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 7.8 Threshold Gate Charge QG(TH) 1.4 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.7 Gate Plateau Voltage VGP 3.6 V 15.2 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.165 2.9 nC NTMFS4C13N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 9.0 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 35 tf 5.0 td(ON) 6.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 13 26 ns 16 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.69 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 23.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 12.1 11.3 9.7 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns nC NTMFS4C13N TYPICAL CHARACTERISTICS 10 V 70 6.5 V TJ = 25°C 60 4.2 V 50 4.0 V 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 2.8 V 1 3 2 ID = 30 A 0.011 0.010 0.009 0.008 0.007 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 4.5 5.0 0.022 0.020 TJ = 25°C 0.018 0.016 VGS = 4.5 V 0.014 0.012 0.010 VGS = 10 V 0.008 0.006 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 TJ = −55°C Figure 2. Transfer Characteristics 0.012 1.5 TJ = 25°C Figure 1. On−Region Characteristics 0.013 1.6 TJ = 125°C 20 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.014 3.0 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.015 0.006 40 0 5 4 50 10 3.0 V 0 VDS = 5 V 60 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.5 V ID, DRAIN CURRENT (A) 70 1.4 1.3 1.2 1.1 1.0 TJ = 150°C 1000 TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4C13N 1000 900 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C Ciss 800 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 700 600 Coss 500 400 300 200 Crss 100 0 0 5 10 15 20 25 30 5 Qgd Qgs 4 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 3 2 1 0 0 4 2 6 8 10 12 14 16 30 IS, SOURCE CURRENT (A) VGS = 0 V tf td(off) tr 10 td(on) 1 10 25 20 15 TJ = 25°C TJ = 125°C 10 5 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 1 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 ID, DRAIN CURRENT (A) 7 Figure 7. Capacitance Variation 100 0.01 9 8 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 0.1 QT 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 11 100 12 ID = 15 A 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4C13N TYPICAL CHARACTERISTICS 100 R(t) (°C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 50 45 ID, DRAIN CURRENT (A) 40 GFS (S) 35 30 25 20 15 10 TA = 85°C 10 TA = 25°C 5 0 0 10 20 30 40 50 60 1 1.E−08 70 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative