NTMFS4C302NT1G

NTMFS4C302N MOSFET – Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 mW, 230 A www.onsemi.com Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 1.15 mW @ 10 V 30 V 230 A 1.7 mW @ 4.5 V D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V ID 230 A Parameter Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TC = 25°C Steady State Steady State TC = 25°C PD 96 W TA = 25°C ID 41 A PD 3.13 W TA = 25°C, tp = 10 ms IDM 388 A TJ, Tstg −55 to 150 °C IS 128 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 61 A) EAS 186 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) @ 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.3 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 1 S (1,2,3) N−CHANNEL MOSFET TA = 25°C Pulsed Drain Current G (4) 1 MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 4C02N A Y W ZZ S S S G D 4C02N AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping† NTMFS4C302NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C302N/D NTMFS4C302N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 24 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 2.2 5.8 V mV/°C VGS = 10 V ID = 30 A 0.95 1.15 VGS = 4.5 V ID = 30 A 1.35 1.7 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 135 S Gate Resistance RG TA = 25 °C 0.75 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 70 Total Gate Charge QG(TOT) 37 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 5780 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 2320 pF 9.0 nC 16 7.0 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 82 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 20 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19 ns 42 11 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 56 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 29 ns 27 69 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4C302N TYPICAL CHARACTERISTICS 450 10 V 4.5 V 450 TJ = 25°C 3.7 V 250 3.5 V 200 3.3 V 150 3.1 V 2.9 V 100 2.7 V 2.5 V 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 ID, DRAIN CURRENT (A) 350 300 0 0.5 1 2 1.5 2.5 300 250 200 150 TJ = 125°C 100 TJ = 25°C 3.5 4.0 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.75 1.55 1.35 1.15 0.95 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 2.35 4.5 TJ = 25°C 2.15 1.95 1.75 VGS = 4.5 V 1.55 1.35 1.15 VGS = 10 V 0.95 0.75 0 50 100 150 200 250 300 350 400 450 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 1.6 VGS = 0 V VGS = 10 V ID = 30 A TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.95 1.4 2.5 2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.15 1.5 TJ = −55°C 0 1.5 3 TJ = 25°C ID = 30 A 3 350 50 2.35 0.75 VDS = 3 V 400 4.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 400 6V 1.3 1.2 1.1 1.0 0.9 TJ = 125°C TJ = 100°C 1000 TJ = 85°C 100 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS4C302N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 Coss 1000 Crss 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 10 15 20 25 7 6 5 4 Qgd Qgs 3 VDS = 15 V ID = 30 A TJ = 25°C 2 1 0 0 20 10 30 40 50 60 70 80 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 td(off) VGS = 4.5 V VDD = 15 V ID = 15 A tf 100 tr td(on) 10 1 10 100 10 TJ = 175°C TJ = 150°C 1 0.1 0.2 100 TJ = 25°C 0.3 0.4 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 100 ms 10 1 VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 1 ms 10 ms dc 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 90 VGS = 0 V RG, GATE RESISTANCE (W) ID, DRAIN CURRENT (A) 1 9 8 Qg, TOTAL GATE CHARGE (nC) 1000 t, TIME (ns) 30 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) Ciss 11 10 100 1.1 NTMFS4C302N TYPICAL CHARACTERISTICS 100 RqJA Steady State = 40°C/W R(t) (°C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 PULSE TIME (sec) Figure 12. Thermal Response 1000 IPEAK, DRAIN CURRENT (A) 0.001 TJ = 25°C 100 TJ = 100°C 10 1 1.0E−6 10E−6 100E−6 1.0E−3 10E−3 TIME IN AVALANCHE (S) Figure 13. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 5 100 1000 NTMFS4C302N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q q E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW 0.10 b C A B 0.05 c RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.495 8X 4.560 1.530 e/2 e 1 4 3.200 K G STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X L PIN 5 (EXPOSED PAD) MILLIMETERS MIN NOM MAX 1.10 0.90 1.00 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ E2 L1 4.530 M 1.330 2X 0.905 1 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4C302N/D