NTMFS4C35NT3G

NTMFS4C35N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 80 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V 30 V 80 A 4.0 mW @ 4.5 V Applications • CPU Power Delivery • DC−DC Converters D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol VDSS VGS Parameter Drain−to−Source Voltage Gate−to−Source Voltage Value 30 ±20 22.5 Unit V V Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.59 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 36 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 6.65 W TA = 25°C ID 12.4 A Continuous Drain Current RqJA (Note 2) ID TA = 80°C 9.3 TA = 25°C PD 0.78 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 80 A Power Dissipation RqJC (Note 1) TC = 25°C PD 33 W TA = 25°C, tp = 10 ms IDM 180 A IDmax TJ, TSTG 80 −55 to +150 A °C IS dV/dt EAS 30 7.0 115 A V/ns mJ TL 260 °C TC =80°C TA = 25°C Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 48 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM D 27 TA = 80°C Current Limited by Package Operating Junction and Storage Temperature N−CHANNEL MOSFET 1 Power Dissipation RqJA (Note 2) Pulsed Drain Current S (1,2,3) A 16.8 TA = 80°C Steady State G (4) SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C35N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceabililty 60 ORDERING INFORMATION Device Package Shipping† NTMFS4C35NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C35NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 1 1 Publication Order Number: NTMFS4C35N/D NTMFS4C35N 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 29 A, EAS = 42 mJ. http://onsemi.com 2 NTMFS4C35N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 3.8 Junction−to−Ambient – Steady State (Note 4) RqJA 48.3 Junction−to−Ambient – Steady State (Note 5) RqJA 159.3 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 18.8 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 13.2 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 12 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 5.0 mV/°C VGS = 10 V ID = 30 A 2.56 3.2 VGS = 4.5 V ID = 30 A 3.4 4.0 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 50 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2300 VGS = 0 V, f = 1 MHz, VDS = 15 V 1097 pF 46 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 15 Threshold Gate Charge QG(TH) 3.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.5 Gate Plateau Voltage VGP 3.1 V 32.5 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.02 6.5 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 12.6 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 33 21.4 6.7 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns NTMFS4C35N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) td(ON) Turn−On Delay Time Rise Time 8.7 tr Turn−Off Delay Time td(OFF) Fall Time 26 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W ns 28 tf 4.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time VGS = 0 V, IS = 10 A TJ = 25°C 0.8 TJ = 125°C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 1.1 V 41 21 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A ns 20 QRR 30 nC 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. 3.8 V − 10 V VGS = 3.6 V ID, DRAIN CURRENT (A) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 3.4 V 3.2 V TJ = 25°C 3.0 V 2.8 V 2.6 V 2.4 V 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = 125°C TJ = 25°C 1.0 1.5 2.0 TJ = −55°C 2.5 3.0 3.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 5.5 TJ = 25°C ID = 30 A 5.0 4.5 4.0 3.5 3.0 2.5 3 VDS = 3 V VGS, GATE−TO−SOURCE VOLTAGE (V) 6.0 2.0 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance vs. VGS 4.0 4.0 3.8 TJ = 25°C 3.6 VGS = 4.5 V 3.4 3.2 3.0 2.8 VGS = 10 V 2.6 2.4 2.2 2.0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage http://onsemi.com 4 NTMFS4C35N TYPICAL CHARACTERISTICS 100,000 VGS = 0 V VGS = 10 V ID = 30 A 1.5 IDSS, LEAKAGE (nA) 1.3 1.2 1.0 0.9 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 C, CAPACITANCE (pF) 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage Ciss 2000 Coss 1600 TJ = 25°C VGS = 0 V 1200 800 400 Crss 5 10 15 20 25 30 10 QT 8 6 4 Qgs TJ = 25°C VGS = 10 V VDD = 15 V ID = 30 A Qgd 2 0 0 4 8 12 16 20 28 24 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 32 20 VDD = 15 V ID = 15 A VGS = 10 V 18 IS, SOURCE CURRENT (A) t, TIME (ns) 100 TJ, JUNCTION TEMPERATURE (°C) 2400 td(off) tf 100 tr td(on) 10 1 TJ = 85°C 10 150 2800 0 TJ = 125°C 1000 1.1 0 TJ = 150°C 10,000 1.4 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.7 1.6 1 10 14 12 10 8 TJ = 125°C TJ = 25°C 6 4 2 0 100 VGS = 0 V 16 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 5 NTMFS4C35N ID, DRAIN CURRENT (A) 1000 Single Pulse Response 0 V < VGS < 10 V 100 TA = 25°C 10 ms 100 ms 10 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) TYPICAL CHARACTERISTICS 100 45 40 ID = 29 A 35 30 25 20 15 10 5 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Stating Junction Temperature 140 100 ID, DRAIN CURRENT (A) 120 GFS (S) 100 80 60 VDS = 1.5 V 40 10 20 0 0 25 50 75 100 125 1 150 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 ID (A) PULSE WIDTH (sec) Figure 13. GFS vs. ID Figure 14. Avalanche Characteristics 1.E−03 100 50% Duty Cycle R(t) (°C/W) 10 1 0.1 0.01 20% 10% 5% 2% 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 15. Thermal Response http://onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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