NTMFS4C59NT3G

NTMFS4C59N Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS Applications • CPU Power Delivery • DC−DC Converters RDS(ON) MAX 5.8 mW @ 10 V 30 V Symbol D (5−8) Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 16.4 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.51 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25.3 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 80°C TA = 25°C TA = 25°C PD ID TA = 80°C 6.0 9.0 6.8 0.76 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 52 A Power Dissipation RqJC (Note 1) TC = 25°C PD 25.5 W TA = 25°C, tp = 10 ms IDM 146 A IDmax 80 A TJ, TSTG −55 to +150 °C IS 23 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 42 mJ TL 260 °C TC =80°C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 39 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 20 Apk, EAS = 20 mJ. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 0 MARKING DIAGRAM D 1 A PD TA = 25°C N−CHANNEL MOSFET W TA = 25°C Current Limited by Package S (1,2,3) 19.0 Power Dissipation RqJA (Note 2) Pulsed Drain Current G (4) 12.3 TA = 80°C Steady State 52 A 8.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C59N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping† NTMFS4C59NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C59NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C59N/D NTMFS4C59N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 4.9 Junction−to−Ambient – Steady State (Note 4) RqJA 49.8 Junction−to−Ambient – Steady State (Note 5) RqJA 164.6 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 21.0 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 8.4 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.4 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 4.8 mV/°C VGS = 10 V ID = 30 A 4.6 5.8 VGS = 4.5 V ID = 18 A 6.8 8.5 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 50 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1252 VGS = 0 V, f = 1 MHz, VDS = 15 V 610 pF 126 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 10.9 Threshold Gate Charge QG(TH) 1.9 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.4 Gate Plateau Voltage VGP 3.1 V 22.2 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.101 3.4 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 10 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32 16 6.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4C59N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 7.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 28 ns 20 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.79 TJ = 125°C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 31 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 15 16 15 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns nC NTMFS4C59N TYPICAL CHARACTERISTICS 4.5 V to 10 V 90 TJ = 25°C ID, DRAIN CURRENT (A) 80 90 3.8 V 70 3.6 V 60 3.4 V 50 40 3.2 V 30 3.0 V 20 2.8 V VGS = 2.6 V 10 0 1 2 3 4 60 50 40 30 20 TJ = 125°C TJ = −55°C TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 0.018 0.016 0.014 0.012 0.010 4 5 6 7 8 9 10 0.009 0.008 TJ = 25°C VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 10 20 30 40 50 60 70 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1600 1.7 1.6 1.5 VGS = 10 V ID = 30 A 1400 C, CAPACITANCE (pF) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 70 0 5 0.020 3 80 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.026 0.024 0.022 0.008 0.006 0.004 0.002 VDS = 5 V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 100 4.0 V ID, DRAIN CURRENT (A) 100 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 1200 1000 Coss 800 600 400 Crss 200 −25 0 25 50 75 100 125 150 VGS = 0 V TJ = 25°C Ciss 0 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 30 NTMFS4C59N 1000 10 VGS = 10 V VDD = 15 V ID = 15 A QT 8 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 6 QGD QGS 4 VGS = 10 V VDD = 15 V ID = 30 A TJ = 25°C 2 0 0 2 4 6 8 10 12 14 16 18 1 Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge ID, DRAIN CURRENT (A) 16 14 TJ = 25°C TJ = 125°C 12 10 8 6 4 0.5 0.6 0.7 0.8 0.9 0 V < VGS < 10 V 100 10 ms 100 ms 10 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 1.0 0.01 0.1 dc 1 10 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 80 20 18 ID = 20 A 70 16 60 14 12 10 8 6 50 40 30 20 4 2 0 100 RG, GATE RESISTANCE (W) VGS = 0 V 0.4 10 Figure 8. Resistive Switching Time Variation vs. Gate Resistance GFS (S) IS, SOURCE CURRENT (A) td(on) 1000 18 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 10 QG, TOTAL GATE CHARGE (nC) 20 2 0 td(off) tf tr 1 22 24 20 100 10 25 50 75 100 125 0 150 0 5 10 15 20 25 30 35 TJ, STARTING JUNCTION TEMPERATURE (°C) ID (A) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature Figure 12. GFS vs. ID http://onsemi.com 5 40 45 50 NTMFS4C59N TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 10 1 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03 PULSE WIDTH (sec) Figure 13. Avalanche Characteristics 100 Duty Cycle = 0.5 R(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 14. Thermal Response http://onsemi.com 6 1 10 100 1000 NTMFS4C59N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO8 FL) CASE 488AA ISSUE H 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A 0.10 C DETAIL A b 0.10 C A B 0.05 c e/2 L 1 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ SOLDERING FOOTPRINT* SIDE VIEW 8X DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 3X 4X 1.270 0.750 4X 1.000 0.965 4 1.330 K 2X 0.905 2X PIN 5 (EXPOSED PAD) G 0.495 E2 L1 M 4.530 3.200 0.475 2X D2 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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