NTMFS4C800NT1G

Final Product/Process Change Notification Document # : FPCN21631X Issue Date: 27 January 2017 Title of Change: Qualification of Wafer Probe and Backside Process (BGBM) at ON Niigata, Japan for Trench 6 Technology Proposed first ship date: 13 May 2017 Contact information: Contact your local ON Semiconductor Sales Office or Samples: Contact your local ON Semiconductor Sales Office Additional Reliability Data: Contact your local ON Semiconductor Sales Office or . Type of notification: This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior to implementation of the change. ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within 30 days of delivery of this notice. To do so, contact . Change Part Identification: Affected parts will be identified with a date code of WW20’17 or later Change category: ☒ Wafer Fab Change Change Sub-Category(s): ☒ Manufacturing Site Change/Addition ☐ Manufacturing Process Change Sites Affected: ☐ All site(s) ☐ not applicable ☐ Assembly Change ☐ Test Change ☐ Other ☐ Material Change ☐ Product specific change ☐ Datasheet/Product Doc change ☐ Shipping/Packaging/Marking ☐ Other: _______________________ ☒ ON Semiconductor site(s) : ☐ External Foundry/Subcon site(s) ON Niigata, Japan Description and Purpose: This final change notification is to inform customers on capacity expansion by qualification and additional site of wafer probe and backside process (BGBM) for Trench (T6) MOSFET technology at ON Niigata, Japan. Current site of wafer probe and BGBM for T6 MOSFET technology is located at ON Seremban, Malaysia. Upon the expiration of this notification, all products listed here will have dual sites for wafer probe and BGBM at ON Seremban and ON Niigata. TEM001092 Rev. L Page 1 of 3 Final Product/Process Change Notification Document # : FPCN21631X Issue Date: 27 January 2017 Reliability Data Summary: QV DEVICE NAME: NVMFS4C01NT1G RMS: S34356 PACKAGE: SO8FL Test Specification IOL MIL-STD-750 (M1037) AEC-Q101 TC HAST uHAST RSH Condition Interval Results Ta=+25°C, delta Tj=100°C On/off = 2 min 15000 cyc 0/84 JESD22-A104 Ta= -55°C to +150°C 1000 cyc 0/84 JESD22-A110 JESD22-A118 JESD22- B106 130°C, 85% RH, 18.8psig, bias 130°C, 85% RH, 18.8psig, unbiased Ta = 265C, 10 sec 96 hrs 96 hrs 0/84 0/84 0/30 Electrical Characteristic Summary: Electrical characteristics are not impacted. TEM001092 Rev. L Page 2 of 3 Final Product/Process Change Notification Document # : FPCN21631X Issue Date: 27 January 2017 List of affected Standard Parts: Part Number NTMFD4C85NT1G Qualification Vehicle Part Number NTMFS4C09NT3G NTMFD4C85NT3G NTMFD4C86NT1G NTMFD4C86NT3G NTMFS4C09NAT1G NTMFS4C09NAT3G NTMFS4C10NAT1G NTMFD4C87NT1G NTMFD4C87NT3G NTMFS4C10NAT3G NTMFS4C10NBT1G NTMFD4C88NT1G NTMFD4C88NT3G NTMFS4C024NT1G NTMFS4C10NBT3G NTMFS4C10NT1G NTMFS4C13NAT1G NTMFS4C024NT3G NTMFS4C025NT1G NTMFS4C025NT3G NTMFS4C13NAT3G NTMFS4C13NBT1G NTMFS4C13NBT3G NTMFS4C027NT1G NTMFS4C027NT3G NTMFS4C13NT1G NTMFS4C13NT3G NTMFS4C028NT1G NTMFS4C028NT3G NTMFS4C029NT1G NTMFS4C155NT1G NTMFS4C250NT1G NTMFS4C290NT1G NTMFS4C029NT3G NTMFS4C032NT1G NTMFS4C032NT3G NVMFS4C01NT1G NTMFS4C35NT1G NTMFS4C35NT3G NTMFS4C55NT1G NTMFS4C054NT1G NTMFS4C054NT3G NTMFS4C55NT3G NTMFS4C760NT1G NTMFS4C05NAT1G NTMFS4C05NAT3G NTMFS4C05NT1G NTMFS4C800NT1G NTTFS4C05NTAG NTTFS4C05NTWG NTMFS4C05NT3G NTMFS4C06NAT1G NTMFS4C06NAT3G NTTFS4C06NTAG NTTFS4C06NTWG NTTFS4C08NTAG NTMFS4C06NBT1G NTMFS4C06NBT3G NTTFS4C10NTAG NTTFS4C10NTWG NTMFS4C06NT1G NTMFS4C08NAT1G NTMFS4C08NT1G NTTFS4C13NTAG NTTFS4C13NTWG NTTFS4C50NTAG NTMFS4C08NT3G NTMFS4C09NT1G NTTFS4C50NTWG NTTFS4C58NTAG NTTFS4C58NTWG TEM001092 Rev. L Page 3 of 3 Qualification Vehicle NVMFS4C01NT1G