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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single,
N-Channel
100 V, 4.3 mW, 113 A
NTMFS4D2N10MD
Features
•
•
•
•
•
•
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
4.3 mW @ 10 V
100 V
113 A
7.1 mW @ 6 V
Typical Applications
•
•
•
•
•
ID MAX
Primary Switch in Isolated DC−DC Converter
Synchronous Rectification (SR) in DC−DC and AC−DC
AC−DC Adapters (USB PD) SR
Load Switch, Hotswap, and ORing Switch
BLDC Motor and Solar Inverter
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
G (4)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
S (1,2,3)
Gate−to−Source Voltage
VGS
±20
V
N−CHANNEL MOSFET
ID
113
A
PD
132
W
ID
16.4
A
Parameter
Continuous Drain
Current RqJC (Note 1)
Power Dissipation
RqJC (Note 1)
TC = 25°C
Steady
State
TA = 25°C
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
Steady
State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IAV = 18 A) (Note 6)
Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)
PD
2.8
W
IDM
763
A
TJ, Tstg
−55 to
+150
°C
IS
110
A
EAS
486
mJ
TL
300
°C
D
1
S
S
S
G
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
D
4D2N10
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
MARKING
DIAGRAM
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 1)
RqJC
0.95
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
45
Device
NTMFS4D2N10MDT1G
Package
Shipping†
DFN5
1500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2020
November, 2020 − Rev. 2
1
Publication Order Number:
NTMFS4D2N10MD/D
NTMFS4D2N10MD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 80 V
V
60
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = 20 V
100
mA
nA
ON CHARACTERISTICS (Note 3)
VGS(TH)
VGS = VDS, ID = 239 mA
VGS(TH)/TJ
ID = 239 mA, ref to 25°C
−7.9
RDS(on)
VGS = 10 V, ID = 46 A
3.8
4.3
VGS = 6 V, ID = 23 A
5.7
7.1
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
2
4
V
mV/°C
mW
Forward Transconductance
gFS
VDS = 8 V, ID = 46 A
105
S
Gate−Resistance
RG
TA = 25°C
0.97
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 50 V
3100
Output Capacitance
COSS
800
Reverse Transfer Capacitance
CRSS
23
Output Charge
QOSS
VGS = 0 V, VDS = 50 V
63.4
Total Gate Charge
QG(TOT)
VGS = 6 V, VDS = 50 V, ID = 46 A
25
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 50 V, ID = 46 A
40
Threshold Gate Charge
QG(TH)
10
Gate−to−Source Charge
QGS
15
Gate−to−Drain Charge
QGD
6.7
Plateau Voltage
VGP
5.0
V
21
ns
1.6
W
CHARGES & CAPACITANCES
pF
nC
60
10
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 10 V, VDS = 50 V,
ID = 46 A, RG = 6 W
9.5
td(OFF)
34
tf
6.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = 46 A
TJ = 25°C
0.85
TJ = 125°C
0.73
V
VGS = 0 V, dIS/dt = 1000 A/ms,
IS = 23 A
23.1
ns
196
nC
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 46 A
52.6
ns
66.1
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
4. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
www.onsemi.com
2
NTMFS4D2N10MD
a) 45°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 111°C/W when mounted on
a minimum pad of 2 oz copper.
5. Pulse Test: pulse width < 300 ms, duty cycle < 2%.
6. EAS of 486 mJ is based on started TJ = 25°C, IAS = 18 A, VDD = 90 V, VGS = 15 V. 100% test at IAS = 51.5 A.
7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
www.onsemi.com
3
NTMFS4D2N10MD
TYPICAL CHARACTERISTICS
VGS = 10 V to 3.4 V
ID, DRAIN CURRENT (A)
3.0 V
80
60
2.8 V
40
2.6 V
20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0
1
2
3
4
80
60
5
TJ = 25°C
40
20
0
TJ = 125°C
0
3
4
6
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
7
6
8
9
10
11
12
VGS, GATE−TO−SOURCE VOLTAGE (V)
7
7
TJ = 25°C
VGS = 6 V
6
5
VGS = 10 V
4
3
2
5
10
15
20
25
30
35
40
45
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 46 A
100K
VGS = 10 V
ID = 46 A
10K
IDSS, LEAKAGE (nA)
2.0
1.5
1.0
0.5
−50
1
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6
5
VDS = 8 V
100
3.2 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
100
TJ = 150°C
TJ = 125°C
1K
TJ = 85°C
100
10
TJ = 25°C
1
−25
0
25
50
75
100
125
150
0.1
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4D2N10MD
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
1K
COSS
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10
20
30
50
40
60
70
80
100
90
tf
IS, SOURCE CURRENT (A)
t, TIME (ns)
4
3
VDS = 50 V
ID = 46 A
TJ = 25°C
2
1
0
0
5
50
tr
10
VGS = 10 V
VDS = 50 V
ID = 46 A
1
10
10
15
20
25
30
35
40
45
VGS = 0 V
10
1
50
TJ = 125°C
0.4
0.5
TJ = 25°C
0.6
TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
IAS, AVALANCHE CURRENT (A)
1000
ID, DRAIN CURRENT (A)
5
Figure 8. Gate−to−Source vs. Total Charge
td(on)
100
10
0.01
QGD
QGS
6
Figure 7. Capacitance Variation
100
0.1
8
7
QG, TOTAL GATE CHARGE (nC)
td(off)
1
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
500
1
10
1 ms
RDS(on) Limit
10 ms
100 ms
1s
TA = 25°C
TJ = Max Rated
RqJA = 111°C/W
Single Pulse
0.01
0.1
10 s
DC
1
10
TJ(initial) = 25°C
1
100
300
TJ(initial) = 100°C
TJ(initial) = 125°C
10
0.001 0.01
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (ms)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
1000
NTMFS4D2N10MD
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
1
10
100
1000
NTMFS4D2N10MD
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2X
0.20 C
D
2
A
B
D1
2X
0.20 C
2
3
q
E
2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
E1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
c
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.10
b
C A B
0.05
c
0.495
8X
4.560
1.530
e
1
2X
4
0.475
3.200
K
G
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
e/2
L
PIN 5
(EXPOSED PAD)
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.15
6.00
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
4.530
E2
L1
M
D2
1.330
2X
0.905
1
0.965
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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