NTMFS4H01NFT3G

NTMFS4H01NF MOSFET – Power, Single, N-Channel, SO-8FL 25 V, 334 A Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • www.onsemi.com VGS MAX RDS(on) TYP QGTOT 4.5 V 1.0 mW 37.8 nC 10 V 0.7 mW 82 nC High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load PIN CONNECTIONS SO8−FL (5 x 6 mm) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 54 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 3.2 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 334 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 125 W Pulsed Drain Current (tp = 10 ms) IDM 568 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 57 Apk, L = 0.3 mH) EAS 487 mJ Drain to Source dV/dt dV/dt 7 V/ns TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C Maximum Junction Temperature (Top View) (Bottom View) N−CHANNEL MOSFET D (5, 6) S (1, 2, 3) G (4) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 37 A, EAS = 205 mJ. © Semiconductor Components Industries, LLC, 2015 May, 2019 − Rev. 2 1 Publication Order Number: NTMFS4H01NF/D NTMFS4H01NF THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 38.9 1.0 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. www.onsemi.com 2 NTMFS4H01NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 10 mA reference to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 20 V V 16 TJ = 25°C mV/°C 500 VDS = 0 V, VGS = +20 V +100 mA nA ON CHARACTERISTICS (Note 5) VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 10 mA reference to 25°C Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.1 3.7 VGS = 10 V ID = 30 A 0.56 0.7 VGS = 4.5 V ID = 30 A 0.79 1 gFS VDS = 12 V, ID = 20 A V mV/°C 101 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 5538 VGS = 0 V, f = 1 MHz, VDS = 12 V CRSS 175.3 Total Gate Charge QG(TOT) 37.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge Gate Resistance VGS = 4.5 V, VDS = 12 V; ID = 30 A pF 3416 2.3 nC 11.8 8 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 82 RG TA = 25°C 1.3 nC 2 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 16.9 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 42.3 ns 46.3 30.9 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10.9 VGS = 11.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 33.2 ns 58.3 23.3 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.35 TJ = 125°C 0.27 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2.0 A 0.6 V 66.7 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 33.1 ns 33.6 90 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFS4H01NF TYPICAL CHARACTERISTICS 200 180 VGS = 10 V to 3 V 140 TJ = 25°C 120 100 VGS = 2.6 V 80 VGS = 2.4 V 60 40 20 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) VGS = 2.8 V 160 VGS = 2.2 V 0 0.5 1.0 1.5 2.0 2.5 140 120 100 80 TJ = 125°C 60 TJ = 25°C 40 20 0 3.0 TJ = −55°C 0 1.0 1.5 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.0016 ID = 30 A 0.0012 0.0008 T = 25°C VGS = 4.5 V VGS = 10 V 0.0006 0.0010 3.0 0.001 0.0008 0.0014 0.0004 0.0006 0.0004 0.0002 0.0002 3 4 5 6 7 8 9 10 VGS (V) 0 20 1E−01 ID = 30 A VGS = 10 V VGS = 0 V 1.3 1.2 1.1 1.0 25 50 75 100 80 90 100 110 120 TJ = 85°C 1E−04 0.9 0 70 TJ = 125°C 1E−03 −25 60 TJ = 150°C 1E−02 1.4 0.8 0.7 −50 50 IDSS, LEAKAGE (A) 1.5 40 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 1.6 30 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.0018 0 VDS = 5 V 160 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 180 125 150 1E−05 TJ = 25°C 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTMFS4H01NF TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V 8000 7000 Ciss 6000 5000 Coss 4000 3000 2000 Crss 0 1000 5 10 15 20 25 t, TIME (ns) Qgs 4 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 10 20 30 40 50 60 70 VGS = 0 V td(on) tr 1 10 90 80 25 td(off) VDD = 12 V ID = 15 A VGS = 10 V 20 15 TJ = 125°C TJ = 25°C 10 5 0 100 0.2 0.3 0.4 0.5 0.6 0.7 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms ID, DRAIN CURRENT (A) 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 100 100 ms 10 1 ms 0 V < VGS < 10 V 10 ms dc RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 8 Figure 7. Capacitance Variation tf 1 QT Qg, TOTAL GATE CHARGE (nC) 100 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1000 0 0.01 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) C, CAPACITANCE (pF) 9000 VGS, GATE−TO−SOURCE VOLTAGE (V) 10,000 100 220 200 ID = 37 A 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4H01NF TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% R(t) (°C/W) 10 2% 1% 1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics 1E+03 400 ID, DRAIN CURRENT (A) 350 GFS (S) 300 1E+02 250 200 150 1E+01 100 50 0 0 20 40 60 80 100 120 140 160 1E+00 1E−07 1E−06 1E−05 1E−04 1E−03 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 1E−02 NTMFS4H01NF ORDERING INFORMATION Package Shipping† NTMFS4H01NFT1G SO8−FL (Pb-Free) 1500 / Tape & Reel NTMFS4H01NFT3G SO8−FL (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM D S S S G 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ H01NF AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability www.onsemi.com 7 D MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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