NTMFS5832NL
MOSFET – Power
40 V, 111 A, 4.2 mW
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
20
A
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain
Current RqJC
(Note 1)
TA = 70°C
Steady
State
Pulsed Drain
Current
PD
3.1
ID
111
TC = 25°C
D (5)
W
G (4)
S (1,2,3)
A
N−CHANNEL MOSFET
PD
W
96
MARKING
DIAGRAM
61
IDM
443
D
A
S
S
S
G
1
Operating Junction and Storage
Temperature
TJ, TSTG
−55 to
+150
°C
IS
111
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS
134
mJ
IAS
52
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Value
Junction−to−Case (Drain) (Note 1)
RqJC
1.3
Junction−to−Ambient Steady State
(Note 1)
RqJA
40
Junction−to−Ambient Steady State
(Note 2)
RqJA
75
Unit
A
Y
W
ZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
Device
NTMFS5832NLT1G
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] inclusing traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
May, 2019 − Rev. 1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5832NL
AYWZZ
ORDERING INFORMATION
Symbol
© Semiconductor Components Industries, LLC, 2012
111 A
6.5 mW @ 4.5 V
89
TC = 70°C
tp = 10 ms
ID MAX
4.2 mW @ 10 V
1.9
TC = 70°C
Power Dissipation
RqJC (Note 1)
RDS(ON) MAX
16
TA = 70°C
TC = 25°C
V(BR)DSS
40 V
Symbol
Continuous Drain
Current RqJA
(Note 1)
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1
Package
Shipping†
DFN5
1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMFS5832NL/D
NTMFS5832NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
34.2
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.0
3.0
6.4
VGS = 10 V
ID = 20 A
3.1
4.2
VGS = 4.5 V
ID = 20 A
5.0
6.5
gFS
VDS = 15 V, ID = 20 A
V
mV/°C
21
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2700
VGS = 0 V, f = 1 MHz, VDS = 25 V
360
pF
250
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 20 A
25
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 20 A
51
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.2
V
Gate Resistance
RG
1.2
W
td(ON)
13
2.0
VGS = 4.5 V, VDS = 20 V; ID = 20 A
nC
8.0
12.7
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 10 A, RG = 1.0 W
24
tf
8.0
td(ON)
10
tr
td(OFF)
VGS = 10 V, VDS = 20 V,
ID = 10 A, RG = 1.0 W
tf
ns
27
18
ns
32
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.73
TJ = 125°C
0.57
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 5 A
1.2
V
28.6
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
QRR
14
14.5
23.4
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTMFS5832NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
TJ = 25°C
5.0 V
VDS ≥ 10 V
200
ID, DRAIN CURRENT (A)
10 V
200
4.5 V
150
4.0 V
100
3.5 V
50
150
100
TJ = 25°C
50
TJ = 125°C
3.0 V
0
1
2
3
4
5
2
3
4
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.010
0.005
2
1
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 20 A
TJ = 25°C
10
0.007
TJ = 25°C
0.006
VGS = 4.5 V
0.005
0.004
VGS = 10 V
0.003
0.002
10
20
30
40
50
60
70
80
90
100 110
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
2.0
1.8
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
0.000
0
0
VGS = 10 V
ID = 20 A
VGS = 0 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.6
1.4
1.2
1.0
TJ = 150°C
10000
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150
100
10
20
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5832NL
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
3500
Ciss
3000
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
2500
2000
1500
1000
Coss
500
0
Crss
0
10
20
30
40
VDS
Qgs
30
20
2
ID = 20 A
TJ = 25°C
0
0
10
20
30
40
50
10
0
60
Qg, TOTAL GATE CHARGE (nC)
100
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
40
Qgd
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDD = 20 V
ID = 20 A
VGS = 4.5 V
td(off)
td(on)
tr
10
tf
1
10
100
40
20
0
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100 ms
10
1 ms
10 ms
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
10 ms
0.1
60
RG, GATE RESISTANCE (W)
100
1
80
VGS = 0 V
TJ = 25°C
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
ID, DRAIN CURRENT (A)
60
50
4
1000
0.01
70
VGS
6
Figure 7. Capacitance Variation
0.1
80
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1
90
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
4000
100
140
120
ID = 53 A
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTMFS5832NL
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
1 0.05
0.02
0.01
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
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5
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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