NTMFS5C406NL
MOSFET – Power, Single,
N-Channel
40 V, 0.7 mW, 362 A
Features
•
•
•
•
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Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
362
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
PD
ID
Operating Junction and Storage Temperature
Range
W
179
A
53
38
PD
TA = 100°C
TA = 25°C, tp = 10 ms
G (4)
S (1,2,3)
N−CHANNEL MOSFET
W
3.9
MARKING
DIAGRAM
1.9
IDM
900
A
TJ, Tstg
−55 to
+175
°C
IS
149
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 32.5 A)
EAS
498
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
D (5,6)
90
TA = 100°C
TA = 25°C
362 A
1.1 mW @ 4.5 V
256
TC = 100°C
TA = 25°C
ID MAX
0.7 mW @ 10 V
40 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(ON) MAX
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C406L
A
Y
W
ZZ
D
S
S
S
G
D
5C406L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.84
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
38.7
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
May, 2019 − Rev. 0
1
Publication Order Number:
NTMFS5C406NL/D
NTMFS5C406NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
16
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 280 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.7
VGS = 10 V
ID = 50 A
0.55
0.7
VGS = 4.5 V
ID = 50 A
0.90
1.1
gFS
VDS =15 V, ID = 50 A
V
mV/°C
215
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
9400
VGS = 0 V, f = 1 MHz, VDS = 20 V
4600
pF
140
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
Threshold Gate Charge
QG(TH)
15.1
Gate−to−Source Charge
QGS
27
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.1
td(ON)
14
VGS = 10 V, VDS = 20 V; ID = 50 A
149
nC
22
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
tf
47
ns
112
131
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.78
TJ = 125°C
0.64
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
93
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
44
ns
50
174
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C406NL
TYPICAL CHARACTERISTICS
500
450
400
ID, DRAIN CURRENT (A)
3.6 V
350
3.4 V
300
250
3.2 V
200
150
3.0 V
100
2.8 V
2.6 V
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0
0.5
1.0
1.5
2.0
250
200
TJ = 25°C
150
100
TJ = 125°C
0
2.0
TJ = −55°C
2.5
3.0
3.5
4.5 5.0
4.0
Figure 2. Transfer Characteristics
3
2
1
3
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
2.0
TJ = 25°C
1.6
1.2
VGS = 4.5 V
0.8
VGS = 10 V
0.4
0
10
30
50
70
90
110
130
150
170 190
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1M
2.0
TJ = 175°C
VGS = 10 V
ID = 50 A
100K
1.6
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.5
Figure 1. On−Region Characteristics
4
1.8
1.0
0.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
IDS = 50 A
2
300
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
0
350
0
3.0
2.5
VDS = 10 V
400
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
500
VGS = 3.8 V to 10 V
450
1.4
1.2
1.0
0.8
TJ = 150°C
TJ = 125°C
10K
TJ = 85°C
1K
100
TJ = 25°C
10
0.6
0.4
−50 −25
0
25
50
75
100
125
150
175
1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5C406NL
TYPICAL CHARACTERISTICS
CISS
10K
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
COSS
1K
10
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10K
5
10
15
20
25
30
t, TIME (ns)
5
QGS
4
QGD
3
VDS = 20 V
ID = 50 A
TJ = 25°C
2
1
0
0
100
td(off)
tr
10
30
60
90
120
150
1
10
10
VGS = 0 V
TJ = 125°C
TJ = 25°C
1
0.3
100
0.4
0.5
0.6
TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
IPEAK DRAIN CURRENT (A)
1000
ID, DRAIN CURRENT (A)
6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(on)
100
10 ms
10
0.1
7
Figure 7. Capacitance Variation
100
1
8
QG, TOTAL GATE CHARGE (nC)
tf
1
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 10 V
VDS = 20 V
ID = 50 A
1K
40
35
IS, SOURCE CURRENT (A)
100
10
VGS ≤ 10 V
Single Pulse
TC = 25°C
0.5 ms
1 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
10 ms
100
1000
TJ(initial) = 25°C
10
1
0.00001
TJ(initial) = 100°C
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NTMFS5C406NL
TYPICAL CHARACTERISTICS
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C406NLT1G
5C406L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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