NTMFS5C410NT1G

MOSFET – Single, N-Channel 40 V, 0.92 mW, 300 A NTMFS5C410N Features • • • • www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 40 V 0.92 mW @ 10 V 300 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 300 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 212 Steady State TA = 100°C TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) N−CHANNEL MOSFET A 46 PD MARKING DIAGRAM W 3.9 D 1.9 IDM 900 A TJ, Tstg −55 to +175 °C IS 158 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 34 A) EAS 578 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter S (1,2,3) 32 TA = 100°C TA = 25°C, tp = 10 ms G (4) W 166 83 ID D (5,6) Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D 5C410N AYWZZ D D 5C410N = NTMFS5C410N A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 October, 2020 − Rev. 1 1 Publication Order Number: NTMFS5C410N/D NTMFS5C410N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 5 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.5 3.5 −8.6 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 0.76 V mV/°C 0.92 190 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 6100 VGS = 0 V, f = 1 MHz, VDS = 25 V 3400 pF 70 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A Threshold Gate Charge QG(TH) 18 Gate−to−Source Charge QGS 28 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.9 td(ON) 54 VGS = 10 V, VDS = 32 V; ID = 50 A 86 nC 14 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 32 V, ID = 50 A, RG = 2.5 W tf 162 ns 227 173 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 91 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 42 ns 49 159 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C410N TYPICAL CHARACTERISTICS VDS = 10 V 200 160 4.4 V 120 80 VGS = 4.0 V 40 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 4.8 V 5.2 V 240 0 0.5 1.0 2.0 1.5 2.5 3.0 150 TJ = 25°C 100 50 TJ = 125°C 0 3 TJ = −55°C 4 5 6 Figure 2. Transfer Characteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 7 1.00 0.95 TJ = 25°C 0.90 0.85 0.80 VGS = 10 V 0.75 0.70 0.65 0.60 0.55 0.50 0 50 100 150 200 250 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−03 2.0 VGS = 10 V ID = 50 A 1.E−04 TJ = 150°C IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2 Figure 1. On−Region Characteristics 4.5 1.8 1 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 3 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 0.5 0 250 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 300 10 V to 6.0 V 280 1.6 TJ = 125°C 1.E−05 1.4 1.2 TJ = 85°C 1.E−06 1.0 0.8 −50 −25 0 25 50 75 100 125 150 175 1.E−07 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5C410N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 1E+4 C, CAPACITANCE (pF) CISS COSS 1E+3 1E+2 1E+1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 5 0 15 10 25 20 30 35 40 6 QGS QGD 5 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 0 10 20 30 40 50 60 70 80 90 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge 100 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) 8 7 QG, GATE CHARGE (nC) td(off) tf tr td(on) 100 VGS = 10 V VDS = 20 V ID = 50 A 1 10 10 TJ = 150°C 1 100 TJ = 125°C 0.3 0.4 0.5 0.6 TJ = 25°C TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms 100 100 ID (A) 1 ms dc TJ(initial) = 25°C IPEAK (A) 1000 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 10 10 ms TJ(initial) = 100°C 10 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 1 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMFS5C410N TYPICAL CHARACTERISTICS 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NTMFS5C410N 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics − RqJA(t) (5C/W) 10 RqJC(t) (°C/W) 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 0.001 1% TC = 25°C Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 14. Thermal Characteristics − RqJC(t) (5C/W) DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C410NT1G 5C410N DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C410NT3G 5C410N DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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