NTMFS5C426NLT1G

DATA SHEET www.onsemi.com MOSFET – Power, Single, N-Channel V(BR)DSS RDS(ON) MAX ID MAX 40 V 1.2 mW @ 10 V 237 A 1.8 mW @ 4.5 V 40 V, 1.2 mW, 237 A D (5,6) NTMFS5C426NL Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Parameter Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 25°C ID TC = 100°C TC = 25°C 168 PD TC = 100°C Steady State Power Dissipation RqJA (Notes 1 & 2) TA = 25°C W 128 64 ID TA = 100°C TA = 25°C A 237 A 41 29 PD MARKING DIAGRAM 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ D S S S G D 5C426L AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability W 3.8 1.9 ORDERING INFORMATION IDM 1480 A See detailed ordering, marking and shipping information on page 5 of this data sheet. TJ, Tstg −55 to + 175 °C IS 107 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 19 A) EAS 453 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current TA = 100°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39.6 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2020 September, 2023 − Rev. 1 1 Publication Order Number: NTMFS5C426NL/D NTMFS5C426NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ − 20 − mV/°C TJ = 25°C − − 10 mA TJ = 125°C − − 250 − 100 OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 40 V IGSS VDS = 0 V, VGS = 20 V − nA VGS(TH) VGS = VDS, ID = 250 mA 1.2 − 2.0 V − −5.3 − mV/°C ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) VGS = 4.5 V ID = 50 A − 1.5 1.8 mW Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A − 1 1.2 mW VDS =10 V, ID = 50 A − 190 − S VGS = 0 V, f = 1 MHz, VDS = 25 V pF Forward Transconductance gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS − 5600 − Output Capacitance COSS − 2600 − Reverse Transfer Capacitance CRSS − 70 − Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A − 44 − nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A − 93 − nC Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 32 V; ID = 50 A − 9.4 − Gate−to−Source Charge QGS − 17.2 − Gate−to−Drain Charge QGD − 13.6 − Plateau Voltage VGP − 3.1 − V − 24 − ns − 72 − td(OFF) − 122 − tf − 116 − TJ = 25°C − 0.76 1.2 TJ = 125°C − 0.66 − − 59 − − 29 − tb − 30 − QRR − 43 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 10 V, VDS = 32 V, ID = 50 A, RG = 2.5 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta VGS = 0 V, IS = 50 A VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A V ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C426NL TYPICAL CHARACTERISTICS 200 VDS = 10 V 3.4 V ID, DRAIN CURRENT (A) 160 140 3.2 V 120 100 80 60 40 20 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 3.0 V 2.8 V 150 100 TJ = 25°C 50 TJ = 125°C 0 1 3 2 TJ = −55°C 3.0 2.5 3.5 Figure 2. Transfer Characteristics TJ = 25°C 7 6 5 4 3 2 1 3.5 4.5 5.5 6.5 7.5 8.5 9.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 2.0 1.5 1.0 0.5 0 10 30 50 70 90 110 130 150 170 190 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K 1.9 VGS = 10 V ID = 50 A TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2.0 Figure 1. On−Region Characteristics 8 1.7 1.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 9 2.5 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 0 200 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 250 VGS = 10 V to 3.6 V 180 1.5 1.3 1.1 10K TJ = 125°C 1K TJ = 85°C 0.9 0.7 −50 −25 0 25 50 75 100 125 150 175 100 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5C426NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS COSS 1K 100 5 0 CRSS 10 15 20 25 35 30 40 QGS 4 QGD VDS = 32 V ID = 50 A TJ = 25°C 2 0 0 10 20 30 40 50 60 70 90 100 80 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge td(off) tf tr t, TIME (ns) 6 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 32 V 100 10 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 10 VGS = 0 V TJ = 25°C f = 1 MHz 10 td(on) 1 VGS = 0 V 10 1 10 TJ = 125°C TJ = 25°C 0.3 0.4 0.5 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 TJ(initial) = 25°C 100 10 Single Pulse TC = 25°C VGS ≤ 10 V 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 IPEAK (A) ID, DRAIN CURRENT (A) 10 ms 0.5 ms 1 ms 10 ms TJ(initial) = 100°C 10 100 1000 1 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMFS5C426NL TYPICAL CHARACTERISTICS RqJA(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse TA = 25°C 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Thermal Response RqJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 1% Single Pulse 0.001 0.000001 TC = 25°C 0.00001 0.0001 0.01 0.001 0.1 1 t, RECTANGULAR PULSE DURATION (s) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C426NLT1G 5C426L DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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