NTMFS5C612NLT3G

MOSFET – Power, Single, N-Channel 60 V, 1.5 mW, 235 A NTMFS5C612NL Features • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical Inspection These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 1.5 mW @ 10 V 60 V Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 235 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State ID W 167 PD W 3.8 1.9 900 A TJ, Tstg −55 to +175 °C IS 164 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A) EAS 451 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter N−CHANNEL MOSFET A 36 IDM Operating Junction and Storage Temperature S (1,2,3) MARKING DIAGRAM 25 TA = 100°C TA = 25°C, tp = 10 ms G (4) 83 TA = 100°C TA = 25°C D (5) 166 PD 235 A 2.3 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C612L XXXXXX = (NTMFS5C612NL) or XXXXXX = 612LWF XXXXXX = (NTMFS5C612NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 July, 2021 − Rev. 5 1 Publication Order Number: NTMFS5C612NL/D NTMFS5C612NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 12.7 VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) 1.2 2.0 −5.76 VGS = 10 V ID = 50 A 1.2 1.5 VGS = 4.5 V ID = 50 A 1.65 2.3 Forward Transconductance gFS VDS = 15 V, ID = 50 A Gate Resistance RG TA = 25°C V mV/°C 151 mW S 2.7 W CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 6660 VGS = 0 V, f = 1 MHz, VDS = 25 V 2953 pF 45 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 50 A 41 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V; ID = 50 A 91 Threshold Gate Charge QG(TH) 5 Gate−to−Source Charge QGS 17.1 Gate−to−Drain Charge QGD Plateau Voltage VGP 2.9 td(ON) 19 VGS = 4.5 V, VDS = 30 V; ID = 50 A nC 10.9 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 30 V, ID = 50 A, RG = 1.0 W tf 51 ns 47 18 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.78 TJ = 125°C 0.66 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 78 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 36 ns 42 105 nC 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTMFS5C612NL TYPICAL CHARACTERISTICS 200 200 VGS = 10 V to 3.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 160 3.2 V 140 120 3.0 V 100 2.8 V 80 60 40 20 0 0 0.5 1.0 1.5 VDS ≤ 10 V 180 2.0 2.5 160 140 120 100 80 3.0 TJ = 25°C 60 40 20 0 TJ = 125°C TJ = −55°C 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2.1 2.0 1.9 TJ = 25°C ID = 50 A 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE VOLTAGE (V) 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 2.2 4.0 TJ = 25°C VGS = 4.5 V VGS = 10 V 10 30 50 70 90 110 130 150 170 190 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1,000,000 2.0 VGS = 10 V ID = 40 A 1.8 100,000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 180 1.6 1.4 1.2 1.0 TJ = 150°C TJ = 125°C 10,000 TJ = 85°C 1000 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10 5 15 25 35 45 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 55 NTMFS5C612NL C, CAPACITANCE (pF) CISS 1000 COSS 100 10 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 10 20 30 40 50 60 10 30 QT 25 8 20 6 15 4 QGD QGS 2 0 0 10 VDS = 48 V TJ = 25°C ID = 50 A 10 20 30 40 50 60 5 80 70 90 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10,000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VGS = 4.5 V VDD = 30 V ID = 50 A td(off) tf 100 t, TIME (ns) IS, SOURCE CURRENT (A) 1000 tr td(on) 10 1 1 10 10 1 100 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms TJ(initial) = 25°C IPEAK (A) ID (A) 100 1 ms dc 10 ms 10 TJ(initial) = 100°C 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 1 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMFS5C612NL 10 ZqJC (°C/W) 1 50% Duty Cycle 0.1 20% 10% 5% 2% 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C612NLT1G 5C612L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C612NLWFT1G 612LWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NTMFS5C612NLT3G 5C612L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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