NTMFS5C628NLT1G

NTMFS5C628NL MOSFET – Power, Single, N-Channel 60 V, 2.4 mW, 150 A Features • • • • www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 2.4 mW @ 10 V 60 V Symbol Value Unit VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 150 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) 110 Steady State TA = 100°C TA = 25°C G (4) W 110 S (1,2,3) A 28 PD 1.9 900 A TJ, Tstg −55 to +175 °C IS 120 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 9 A) EAS 565 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM W 3.7 IDM Operating Junction and Storage Temperature N−CHANNEL MOSFET 20 TA = 100°C TA = 25°C, tp = 10 ms D (5) 56 ID 150 A 3.3 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage ID MAX 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 5C628L A Y W ZZ D S S S G D 5C628L AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Symbol Value Unit Junction−to−Case − Steady State RqJC 1.3 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 May, 2019 − Rev. 1 1 Publication Order Number: NTMFS5C628NL/D NTMFS5C628NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 26 VGS = 0 V, VDS = 60 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 135 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.0 VGS = 10 V ID = 50 A 2.0 2.4 VGS = 4.5 V ID = 50 A 2.6 3.3 gFS VDS = 15 V, ID = 50 A V mV/°C 110 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 3600 VGS = 0 V, f = 1 MHz, VDS = 25 V 1700 pF 28 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 50 A 24 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 50 A 52 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 3.0 td(ON) 15 6.0 VGS = 4.5 V, VDS = 48 V; ID = 50 A nC 12 4.5 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 30 V, ID = 50 A, RG = 2.5 W tf 150 ns 28 70 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.8 TJ = 125°C 0.75 tRR ta tb 1.2 V 55 VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A QRR 28 ns 28 60 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C628NL TYPICAL CHARACTERISTICS 250 225 3.6 V 225 ID, DRAIN CURRENT (A) 200 175 150 3.2 V 125 100 75 2.8 V 50 25 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 1.0 2.0 3.0 150 125 100 TJ = 25°C 75 50 4.0 TJ = 125°C 0 2.5 3.0 5 4 3 2 3 4 5 7 6 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 3.5 Figure 2. Transfer Characteristics 6 3.0 TJ = 25°C 2.8 VGS = 4.5 V 2.6 2.4 2.2 VGS = 10 V 2.0 1.8 1.6 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E+06 2.0 VGS = 10 V ID = 50 A TJ = 175°C 1.E+05 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2.0 Figure 1. On−Region Characteristics 7 1.6 1.4 1.2 1.0 1.E+04 TJ = 125°C 1.E+03 TJ = 85°C 1.E+02 0.8 0.6 −50 1.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 1.8 1.0 0.5 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 2 175 0 9 1 VDS = 5 V 200 25 2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 250 VGS = 4.0 V to 10 V −25 0 25 50 75 100 125 150 175 1.E+01 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFS5C628NL C, CAPACITANCE (pF) 10000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS COSS 1000 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 1 0.1 CRSS 0 10 20 30 40 60 50 10 QT 9 8 7 6 5 3 VDS = 48 V TJ = 25°C ID = 50 A 2 1 0 0 Figure 8. Gate−to−Source vs. Total Charge IS, SOURCE CURRENT (A) t, TIME (ns) tf VGS = 4.5 V VDS = 30 V ID = 50 A td(on) 1 10 VGS = 0 V 10 1 TJ = 125°C 0.1 100 0.3 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 1 ms 10 ms 100 500 ms IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 Figure 7. Capacitance Variation td(off) 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 40 30 QG, TOTAL GATE CHARGE (nC) tr 10 20 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 100 QGD QGS 4 0.1 1 TJ (initial)= 25°C 10 TJ (initial)= 100°C 1 10 100 1.E−05 1.E−04 1.E−03 1.E−02 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMFS5C628NL RqJA, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 100 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C628NLT1G 5C628L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C628NLT3G 5C628L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5C628NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE L 2X 0.20 C D 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 c A1 4 TOP VIEW C 3X e 0.10 C RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A 2X 0.495 0.05 c STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 4.560 1.530 e/2 L 1 4 3.200 4.530 K PIN 5 (EXPOSED PAD) MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 2X b C A B SEATING PLANE DETAIL A A 0.10 C 0.10 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q E2 L1 M 1.330 2X 0.905 1 0.965 G D2 BOTTOM VIEW 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS5C628NL/D