DATA SHEET
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MOSFET – Power, Single,
N-Channel
V(BR)DSS
ID MAX
0.80 mW @ 10 V
40 V
40 V, 0.80 mW, 330 A
RDS(ON) MAX
330 A
1.1 mW @ 4.5 V
NTMFS5H400NL
D (5)
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
330
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
W
160
66
ID
TA = 100°C
TA = 25°C
A
46
29
PD
TA = 100°C
W
3.3
1.3
IDM
900
A
TJ, Tstg
−55 to
+ 150
°C
IS
180
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 49 A)
EAS
360
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
D
DFN5 (SO−8FL)
CASE 506EZ
210
TC = 100°C
TA = 25°C
MARKING
DIAGRAM
1
S
S
S
G
D
5H400L
AYWZZ
D
D
5H400L
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.76
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
February, 2022 − Rev. 3
1
Publication Order Number:
NTMFS5H400NL/D
NTMFS5H400NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
11.9
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.8
VGS = 10 V
ID = 50 A
0.60
0.80
VGS = 4.5 V
ID = 50 A
0.85
1.1
gFS
VDS =15 V, ID = 50 A
V
mV/°C
350
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
7700
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
VGS = 0 V, VDD = 20 V
80
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
54
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
120
Threshold Gate Charge
QG(TH)
11
Gate−to−Source Charge
QGS
20
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.7
td(ON)
20
VGS = 0 V, f = 1 MHz, VDS = 20 V
1800
pF
87
VGS = 4.5 V, VDS = 20 V; ID = 50 A
nC
nC
13
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
tf
140
ns
51
17
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.76
TJ = 125°C
0.6
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
66
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
35
ns
31
100
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5H400NL
TYPICAL CHARACTERISTICS
300
300
10 V to 4.5 V
275
ID, DRAIN CURRENT (A)
3.2 V
3.4 V
3.0 V
200
150
2.8 V
100
50
2.6 V
2.4 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0.0
0.5
1.0
1.5
2.0
2.5
200
175
150
125
TJ = 25°C
100
75
TJ = 125°C
50
0
1
1.5
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3
2
1
3
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
4
1.2
TJ = 25°C
1.1
1
0.9
VGS = 4.5 V
0.8
0.7
VGS = 10 V
0.6
0.5
0.4
10
110
60
210
160
260
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E+6
1.8
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4
1.6
TJ = −55°C
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 50 A
2
225
0
3.0
5
0
250
25
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
250
1.4
1.2
1
TJ = 150°C
1.E+5
TJ = 125°C
1.E+4
TJ = 85°C
1.E+3
0.8
0.6
−50
−25
0
25
50
75
100
125
150
1.E+2
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5H400NL
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
CISS
COSS
1.E+3
CRSS
1.E+2
1.E+1
0
VGS = 0 V
TJ = 25°C
f = 1 MHz
5
10
15
20
25
30
35
40
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.E+4
VDS = 20 V
TJ = 25°C
ID = 50 A
9
8
7
6
5
4
QGD
QGS
3
2
1
0
0
20
40
60
80
100
120
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
1000
IS, SOURCE CURRENT (A)
VGS = 0 V
t, TIME (ns)
tr
100
tf
td(off)
td(on)
10
1
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1
10
TJ = 150°C
TJ = −55°C
1
0.1
100
TJ = 25°C
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
1 ms
500 ms
100
100
10
TJ(initial) = 100°C
10
1
0.1
0.1
TJ(initial) = 25°C
IPEAK (A)
IDS (A)
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
1
100E−3
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10E−3
NTMFS5H400NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5H400NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5H400NLT1G
5H400L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5H400NLT3G
5H400L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
DATE 25 AUG 2021
1
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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