NTMFS5H409NL
MOSFET – Power, Single,
N-Channel
40 V, 1.1 mW, 270 A
Features
•
•
•
•
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Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
270
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
PD
ID
W
140
A
41
26
PD
TA = 100°C
A
TJ, Tstg
−55 to
+150
°C
IS
160
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 45 A)
EAS
304
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1.3
900
Operating Junction and Storage Temperature
Range
G (4)
W
3.2
IDM
TA = 25°C, tp = 10 ms
D (5)
56
TA = 100°C
TA = 25°C
270 A
1.6 mW @ 4.5 V
170
TC = 100°C
TA = 25°C
ID MAX
1.1 mW @ 10 V
40 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(ON) MAX
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H409L
A
Y
W
ZZ
D
S
S
S
G
D
5H409L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information
section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
June, 2019 − Rev. 2
1
Publication Order Number:
NTMFS5H409NL/D
NTMFS5H409NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
19.1
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.8
VGS = 10 V
ID = 50 A
0.85
1.1
VGS = 4.5 V
ID = 50 A
1.2
1.6
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
300
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
5700
VGS = 0 V, f = 1 MHz, VDS = 20 V
1400
pF
73
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
41
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
89
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
Output Charge
QOSS
8.6
VGS = 4.5 V, VDS = 20 V; ID = 50 A
VGS = 0 V, VDS = 20 V
nC
15
10
2.8
V
62
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
17
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
tf
130
ns
40
14
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.79
TJ = 125°C
0.64
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
59
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
31
ns
28
80
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5H409NL
TYPICAL CHARACTERISTICS
300
10 V to
4.5 V
3.6 V
3.2 V
200
ID, DRAIN CURRENT (A)
250
3.4 V
3.0 V
150
2.8 V
100
50
2.6 V
2.4 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0.0
0.5
1.0
1.5
2.0
2.5
TJ = −55°C
0.5
1
1.5
2
2.5
3
3.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
2
1
4
5
6
7
8
9
10
1.6
4
TJ = 25°C
1.4
VGS = 4.5 V
1.2
1
VGS = 10 V
0.8
0.6
0.4
10
60
110
160
210
260
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E+6
1.8
VGS = 10 V
ID = 50 A
1.E+5
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = 125°C
0
3.0
3
1.4
1.2
1
0.8
0.6
TJ = 25°C
100
75
50
VGS, GATE−TO−SOURCE VOLTAGE (V)
4
1.6
175
150
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
0
3
VDS = 10 V
275
250
225
200
25
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(mW)
ID, DRAIN CURRENT (A)
300
−50
−25
0
25
50
75
100
125
150
TJ = 150°C
TJ = 125°C
1.E+4
TJ = 85°C
1.E+3
1.E+2
1.E+1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5H409NL
1.E+4
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
CISS
C, CAPACITANCE (pF)
COSS
1.E+3
CRSS
1.E+2
1.E+1
0
VGS = 0 V
TJ = 25°C
f = 1 MHz
5
10
15
20
25
30
35
40
8
7
6
5
4
QGD
QGS
3
2
1
0
10
20
30
40
50
60
70
80
90
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
VGS = 0 V
IS, SOURCE CURRENT (A)
tf
tr
100
t, TIME (ns)
VDS = 20 V
TJ = 25°C
ID = 50 A
9
0
1000
td(off)
td(on)
10
1
10
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1
10
TJ = 150°C
1
TJ = −55°C
0.1
100
TJ = 25°C
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1 ms
500 ms
TJ(initial) = 25°C
10 ms
IDS (A)
IPEAK (A)
100
TJ(initial) = 100°C
10
10
1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
1
100E−6
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10E−3
NTMFS5H409NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
1
0.1
0.01
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5H409NLT1G
5H409L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5H409NLT3G
5H409L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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