NTMFS5H414NL
MOSFET – Single,
N-Channel
40 V, 1.4 mW, 210 A
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
210
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
W
110
A
35
22
PD
TA = 100°C
A
TJ, Tstg
−55 to
+ 150
°C
IS
120
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 44 A)
EAS
290
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1.3
900
Operating Junction and Storage Temperature
G (4)
W
3.1
IDM
TA = 25°C, tp = 10 ms
D (5)
45
ID
TA = 100°C
TA = 25°C
210 A
2.0 mW @ 4.5 V
130
TC = 100°C
TA = 25°C
ID MAX
1.4 mW @ 10 V
40 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(ON) MAX
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H414L
A
Y
W
ZZ
D
S
S
S
G
D
5H414L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
1.1
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 0
1
Publication Order Number:
NTMFS5H414NL/D
NTMFS5H414NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
17
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
1.2
1.55
2.0
−4.5
V
mV/°C
VGS = 10 V
ID = 20 A
1.1
1.4
VGS = 4.5 V
ID = 20 A
1.5
2.0
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
4550
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
VGS = 0 V, VDD = 20 V
45
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 20 A
35
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 20 A
75
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
Gate Resistance
RG
VGS = 0 V, f = 1 MHz, VDS = 20 V
985
pF
74
nC
7.0
VGS = 4.5 V, VDS = 20 V; ID = 20 A
TA = 25°C
nC
11.5
10
2.6
V
0.7
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
15.2
VGS = 4.5 V, VDS = 20 V,
ID = 20 A, RG = 2.5 W
tf
52.3
ns
38.8
11.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.75
TJ = 125°C
0.6
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.2
V
51.7
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
QRR
28.1
ns
23.6
68
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5H414NL
TYPICAL CHARACTERISTICS
VGS = 10 V to 3.6 V
150
3.2 V
3.0 V
100
75
2.8 V
50
150
125
100
75
25
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
TJ = −55°C
2.0
1.5
3.0
2.5
3.5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 2. Transfer Characteristics
3
2
1
4
5
6
7
9
8
10
VGS, GATE VOLTAGE (V)
2.0
TJ = 25°C
VGS = 4.5 V
1.6
1.4
1.2
VGS = 10 V
1.0
0.8
0.6
0
20
40
60
80
ID, DRAIN CURRENT (A)
100,000
TJ = 150°C
IDSS, LEAKAGE (nA)
VGS = 10 V
ID = 20 A
1.2
1.0
100 120 140 160 180 200
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.4
4.0
1.8
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.0
Figure 1. On−Region Characteristics
4
1.6
0.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 20 A
3
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
0
TJ = 25°C
50
25
0
VDS = 10 V
175
125
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
175
200
3.4 V
ID, DRAIN CURRENT (A)
200
TJ = 125°C
10,000
TJ = 85°C
1000
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5H414NL
C, CAPACITANCE (pF)
10,000
CISS
COSS
1000
100
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
5
10
15
20
25
30
35
40
8
7
6
5
4
QGS
3
QGD
VDS = 20 V
TJ = 25°C
ID = 20 A
2
1
0
0
10
30
20
40
50
60
70
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
IS, SOURCE CURRENT (A)
VGS = 4.5 V
VDS = 20 V
ID = 20 A
t, TIME (ns)
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
100
tr
tf
td(on)
td(off)
10
10
1
10
10
TJ = 125°C
1
100
0.4
0.3
TJ = 25°C
0.5
0.6
TJ = −55°C
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
100
TJ(initial) = 25°C
10
0.1
10 ms
TC = 25°C
Single Pulse
VGS ≤ 10 V
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
IPEAK (A)
IDS (A)
100
1
10
100
TJ(initial) = 100°C
10
0.5 ms
1 ms
10 ms
1000
1
0.00001
0.0001
0.001
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NTMFS5H414NL
TYPICAL CHARACTERISTICS
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
0.01
NVMFS5C442NL 5x6 SOFL PCB Cu Area 650 mm2 PCB Cu thk 2 oz
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5H414NLT1G
5H414L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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