MOSFET – Power, Single,
N-Channel
80 V, 1.9 mW, 224 A
NTMFS6H800NL
Features
•
•
•
•
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Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
ID
224
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
PD
ID
W
214
N−CHANNEL MOSFET
PD
W
3.9
MARKING
DIAGRAM
1.9
900
A
TJ, Tstg
−55 to
+175
°C
IS
179
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 16.2 A)
EAS
601
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
S (1,2,3)
A
30
IDM
Operating Junction and Storage Temperature
Range
G (4)
21
TA = 100°C
TA = 25°C, tp = 10 ms
D (5,6)
107
TA = 100°C
TA = 25°C
224 A
2.4 mW @ 4.5 V
158
TC = 100°C
TA = 25°C
ID MAX
1.9 mW @ 10 V
80 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(ON) MAX
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
DFN5 (SO−8FL)
CASE 506EZ
1
S
S
S
G
D
6H800L
AYWZZ
D
D
6H800L
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.7
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
April, 2021 − Rev. 3
1
Publication Order Number:
NTMFS6H800NL/D
NTMFS6H800NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
80
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
36
VGS = 0 V,
VDS = 80 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 330 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.1
VGS = 10 V
ID = 50 A
1.5
1.9
VGS = 4.5 V
ID = 50 A
1.9
2.4
gFS
VDS =8 V, ID = 50 A
V
mV/°C
250
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
6900
VGS = 0 V, f = 1 MHz, VDS = 40 V
800
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
10
Gate−to−Source Charge
QGS
19
Gate−to−Drain Charge
QGD
Plateau Voltage
Total Gate Charge
pF
22
VGS = 10 V, VDS = 40 V; ID = 50 A
VGS = 4.5 V, VDS = 40 V; ID = 50 A
112
nC
17
VGP
3.0
V
QG(TOT)
53
nC
td(ON)
20
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 64 V,
ID = 50 A, RG = 2.5 W
tf
153
ns
118
163
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.8
TJ = 125°C
0.7
tRR
ta
tb
1.2
V
77
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
40
ns
38
110
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS6H800NL
TYPICAL CHARACTERISTICS
220
2.8 V
220
180
2.6 V
3.0 V to 10 V
160
140
120
100
VGS = 2.4 V
80
60
40
180
160
140
120
100
60
40
20
0
1
2
4
3
6
5
7
8
0
1.0
1.5
2.0
2.5
3.5
3.0
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
5
4
3
2
1
0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
2.5
VGS = 4.5 V
2.0
VGS = 10 V
1.5
1.0
0.5
0
10
20
30
40
1000
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (nA)
1.5
1.0
TJ = 125°C
10
TJ = 85°C
1
0.01
50
75
100
125
150
70
TJ = 150°C
TJ = 25°C
0.1
25
60
TJ = 175°C
100
2.0
0
50
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
0.5
−50 −25
4.0
3.0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
6
3
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
TJ = 25°C
80
20
0
VDS = 10 V
200
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
200
175
5
15
25
35
45
55
65
75
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS6H800NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
1K
COSS
100
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10
CRSS
20
30
40
50
60
70
80
7
6
5
4
QGD
QGS
3
VDS = 40 V
TJ = 25°C
ID = 50 A
2
1
0
20
0
40
80
60
100
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
VGS = 0 V
IS, SOURCE CURRENT (A)
tf
100
td(on)
VGS = 4.5 V
VDS = 64 V
ID = 50 A
1
10
120
100
td(off)
tr
t, TIME (ns)
9
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1K
10
10
10
1
100
TJ = 125°C
0.3
0.4
TJ = 25°C
0.5
0.6
TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1K
100
10
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
IPEAK, (A)
ID, DRAIN CURRENT (A)
TJ (initial) = 25°C
0.5 ms
1 ms
10 ms
10
TJ (initial) = 100°C
1
1K
100
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS6H800NL
TYPICAL CHARACTERISTICS
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS6H800NLT1G
6H800L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS6H800NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE O
q
q
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6
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