MOSFET – Power, Single,
N-Channel
80 V, 2.1 mW, 203 A
NTMFS6H800N
Features
•
•
•
•
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Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(ON) MAX
ID MAX
80 V
2.1 mW @ 10 V
203 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
ID
203
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
W
200
ID
A
28
PD
1.9
D
900
TJ, Tstg
−55 to
+ 175
°C
IS
166
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 16.1 A)
EAS
1271
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
A
DFN5 (SO−8FL) S
CASE 506EZ
S
S
G
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
6H800N
AYWZZ
D
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
MARKING
DIAGRAM
W
3.8
IDM
Operating Junction and Storage Temperature
N−CHANNEL MOSFET
20
TA = 100°C
TA = 25°C, tp = 10 ms
S (1,2,3)
100
TA = 100°C
TA = 25°C
G (4)
143
PD
D (5)
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.75
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
April, 2021 − Rev. 2
1
Publication Order Number:
NTMFS6H800N/D
NTMFS6H800N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
80
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
39
VGS = 0 V,
VDS = 80 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 330 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
2.0
4.0
8.0
VGS = 10 V
ID = 50 A
1.8
2.1
VGS = 6 V
ID = 50 A
2.6
3.5
gFS
VDS =15 V, ID = 50 A
V
mV/°C
138
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
5530
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
116
Total Gate Charge
QG(TOT)
85
Threshold Gate Charge
QG(TH)
15
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
16
Plateau Voltage
VGP
4.8
td(ON)
25
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 50 A
760
pF
27
nC
nC
26
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 64 V,
ID = 50 A, RG = 2.5 W
tf
89
ns
97
85
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.8
TJ = 125°C
0.7
tRR
ta
tb
1.2
V
76
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
36
ns
40
82
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS6H800N
TYPICAL CHARACTERISTICS
350
5.5 V to 10 V
5.0 V
250
200
150
4.5 V
100
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
250
200
150
1
2
3
6
5
4
7
50
0
8
TJ = 125°C
2
6
Figure 2. Transfer Characteristics
30
25
20
15
10
5
0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.0
TJ = 25°C
3.5
VGS = 6.0 V
3.0
2.5
2.0
VGS = 10 V
1.5
1.0
0
50
150
100
200
300
250
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1M
2.4
VGS = 10 V
ID = 50 A
TJ = 175°C
TJ = 150°C
100K
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
5
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 50 A
2.0
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
35
2.2
3
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
40
3
TJ = 25°C
100
VGS = 4.0 V
0
VDS = 10 V
300
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
300
ID, DRAIN CURRENT (A)
350
1.8
1.6
1.4
1.2
1.0
0.8
10K
TJ = 125°C
1K
TJ = 85°C
100
TJ = 25°C
10
0.6
0.4
−50 −25
1
0
25
50
75
100
125
150
175
5
15
25
35
45
55
65
75
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS6H800N
TYPICAL CHARACTERISTICS
CISS
1K
COSS
100
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10
CRSS
20
30
40
50
60
70
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10K
9
8
7
6
QGD
QGS
5
4
3
VDS = 40 V
TJ = 25°C
ID = 50 A
2
1
0
80
10
0
30
20
50
40
60
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1K
80
70
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1K
IS, SOURCE CURRENT (A)
VGS = 0 V
td(off)
100
tf
VGS = 10 V
VDS = 64 V
ID = 50 A
td(on)
10
1
10
ID, DRAIN CURRENT (A)
0.1
100
TJ = 125°C
1
TJ = −55°C
TJ = 25°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1K
1000
TC = 25°C
VGS ≤ 10 V
Single Pulse
100
TJ (initial) = 25°C
100
10 ms
10
1
0.1
10
IPEAK, (A)
t, TIME (ns)
100
tr
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
10
0.5 ms
1 ms
10 ms
1
1K
100
TJ (initial) = 100°C
0.00001
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NTMFS6H800N
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS6H800NT1G
6H800N
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
DATE 25 AUG 2021
1
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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