NTMFSC004N08MC

MOSFET - Power, Single N-Channel, DUAL COOLt, DFN8 80 V, 4.0 mW, 136 A NTMFSC004N08MC www.onsemi.com Features • • • • Advanced Dual−Sided Cooled Packaging Ultra Low RDS(on) to Minimize Conduction Losses MSL1 Robust Packaging Design These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant VSSS RSS(ON) MAX ID MAX 4.0 mW @ 10 V 80 V 136 A 8.5 mW @ 6 V Typical Applications N−Channel MOSFET • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion S 1 8 D S 2 7 D S 3 6 D G 4 5 D MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 136 A PD 127 W ID 80 A PD 3.2 W IDM 487 A TJ, Tstg −55 to +150 °C IS 157 A EAS 178 mJ TL 300 °C Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Note 1, 2) Power Dissipation RqJA (Note 1, 2) Pulsed Drain Current Steady State Steady State TC = 25°C TA = 25°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IAV = 55 A, L = 0.1 mH) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. DFN8 5x6.15 CASE 506EG MARKING DIAGRAM AWLYW 4N08MC ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 4N08MC= Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 June, 2021 − Rev. 3 1 Publication Order Number: NTMFSC004N08MC/D NTMFSC004N08MC THERMAL CHARACTERISTICS Symbol Max Unit RqJC Junction−to−Case – Steady State Parameter 0.98 °C/W RqJT Junction−to−Case Top – Steady State 1.49 RqJA Junction−to−Ambient – Steady State (Note 1) 39 ORDERING INFORMATION Device Device Marking Package Shipping† 4N08MC DFN8 5x6.15 (Pb−Free/Halogen Free) 3000 / Tape & Reel NTMFSC004N08MC †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Drain*to*Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain*to*Source Breakdown Voltage Temperature Coefficient V(BR)DSS / TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate*to*Source Leakage Current ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 80 V V 0.05 mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = ±20 V GS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 3) V Gate Threshold Voltage Negative Threshold Temperature Coefficient V Drain*to*Source On Resistance Gate−Resistance /T GS(TH) J R ID = 250 mA, ref to 25°C 2.0 2.9 4.0 −6.5 V mV/°C VGS = 10 V, ID = 44 A 3.1 4.0 VGS = 6 V, ID = 22 A 5.0 8.5 TA = 25°C 1.3 W ISS 2980 pF OSS 950 DS(on) RG mW CHARGES & CAPACITANCES Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C VGS = 0 V, f = 1 MHz, VDS = 40 V 50 RSS Total Gate Charge Q G(TOT) Total Gate Charge Q G(TOT) Gate−to−Source Charge Q GS Gate−to−Drain Charge Q GD VGS = 6 V, VDS = 40 V, ID = 22 A nC 27.8 43.4 VGS = 10 V, VDS = 40 V, ID = 22 A 15 7 SWITCHING CHARACTERISTICS (Note 3) Turn*On Delay Time td(ON) 11.7 tr 21.5 Rise Time Turn*Off Delay Time td(OFF) Fall Time VGS = 10 V, VDS = 40 V, ID = 44 A, RG = 2.5 W tf ns 28.7 5.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 44 A TJ = 25°C 0.83 TJ = 125°C 0.69 VGS = 0 V, dIS/dt = 100 A/ms, IS = 44 A 1.30 V 44 ns 50 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFSC004N08MC TYPICAL CHARACTERISTICS 300 300 TJ=25C 250 ID ,Drain Current(A) ID,Drain Current(A) 250 200 150 100 VG=5.00 VG=5.50 VG=6.00 VG=7.00 VG=8.00 VG=10.00 50 0 VDS=5 0 2 200 150 100 50 4 6 8 VDS ,Drain to Source Voltage(V) 0 10 TEMP=−55.00 TEMP=25.00 TEMP=150.00 0 2 80 I D =44.7 T J =25C 70 60 50 40 30 20 10 2 0 5 6 7 8 9 VGS,Gate to Source Voltage(V) 10 35 TJ =25C 30 25 20 15 10 VG =10.00 VG =6.00 5 2 0 0 6 40 60 80 100 120 ID ,Drain Current(A) 140 160 180 1e−08 ID =44.7 V GS =10V 5 C,Capacitance(F) Rdson,Drain to Source Resistance(mOhm) 20 Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. VGS 5.5 10 Figure 2. Transfer Characteristics Rdson,Drain to Source Resistance(mOhm) Rdson,Drain to Source Resistance(mOhm) Figure 1. On−Region Characteristics 4 6 8 VGS ,Gate to Source Voltage(V) 4.5 4 3.5 3 1e−09 V GS =0V TJ =25C f=1e6Hz 1e−10 2.5 2 1.5 −100 −50 0 50 100 TJ ,Junction Temperature(C) 1e−11 0.01 150 Figure 5. On−Resistance Variation with Temperature ciss coss crss 0.1 1 10 VDS ,Drain to Source Voltage(V) Figure 6. Capacitance Variation www.onsemi.com 3 100 NTMFSC004N08MC TYPICAL CHARACTERISTICS 12 1e−06 VGS=10 VDS=64.0 ID=45 10 8 1e−07 t,TIME(S) VGS ,Gate to Source Voltage(V) I D =22.4 6 1e−08 4 V D =30.00 V D =40.00 V D =50.00 2 0 0 5 10 15 20 25 30 35 Q G ,Gate Charge(nC) 40 45 1e−09 1 50 Figure 7. Gate−to−Source Voltage vs. Total Charge 1e+04 100 10 2 1 0.1 0.01 0.001 0.0001 TEMP=150.00 TEMP=25.00 TEMP=−55.00 1e−05 0.2 0.4 0.6 0.8 1 VSD ,Body Diode Forward Voltage(V) 100 10 2 1 0.1 1.2 pulseDuration=10u pulseDuration=100u pulseDuration=1m pulseDuration=10m pulseDuration=100m 0.1 Figure 9. Diode Forward Voltage vs. Current 1 10 VDS ,Drain to Source Voltage(V) 100 Figure 10. Maximum Rated Forward Biased Safe Operating Area 120 temp=25.00 temp=100.00 temp=125.00 TJ =25C V DS =5V 100 100 80 Gfs(S) IAS ,AVALANCHE CURRENT(A) 1000 100 1000 VGS =0 1e−06 0 10 RG ,Gate Resistance(Ohm) Figure 8. Resistive Switching Time Variation vs. Gate Resistance ID,Drain Current(A) IS ,Reverse Drain Current 1000 tdon tdoff tr tf 10 60 40 2 1 20 0.1 1e−06 1e−05 0.0001 tAV ,TIME IN AVALANCHE(s) 0.001 0 0 Figure 11. IPEAK vs. Time in Avalanche 5 10 15 20 25 ID (A) 30 Figure 12. GFS vs. ID www.onsemi.com 4 35 40 45 NTMFSC004N08MC TYPICAL CHARACTERISTICS r(t),Effective Transient Thermal Resistance 140 ID ,Drain Current(A) 120 100 80 60 40 20 0 20 40 60 80 100 120 TC ,Case Temperature(C) 140 2 D=0 is Single Pulse 1 0.1 0.01 1e−06 160 Figure 13. Maximum Current vs. Case Temperature D=0.00 D=0.01 D=0.02 D=0.05 D=0.10 D=0.20 D=0.50 1e−05 0.0001 0.001 0.01 0.1 t,Rectangular Pulse Duration(sec) Figure 14. Thermal Response www.onsemi.com 5 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D DATE 25 AUG 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXX ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code 98AON84257G *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5x6.15, 1.27P, DUAL COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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