NTMFSC4D2N10MC

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DUAL COOL), DFN8 5x6.15 V(BR)DSS RDS(ON) MAX 4.3 mW @ 10 V 100 V 116 A 12 mW @ 6 V 100 V, 4.3 mW, 116 A N−Channel MOSFET NTMFSC4D2N10MC Features • • • • • ID MAX Advanced Dual−Sided Cooled Packaging Ultra Low RDS(on) to Minimize Conduction Losses MSL1 Robust Packaging Design 175°C TJ Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S 1 8 D S 2 7 D S 3 6 D G 4 5 D Typical Applications • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified) Parameter Drain−to−Source Breakdown Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State Steady State Symbol Value Unit V(BR)DSS 100 V VGS ±20 V ID 116 A PD 122 W ID 29.6 A PD 7.9 W IDM 900 A TJ, Tstg −55 to +175 °C IS 101 A EAS 120 mJ TL 300 °C TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IAV = 49 A, L = 0.1 mH) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM AYWWZZ 4D2N10 TC = 25°C TA = 25°C, tp = 10 ms DFN8 5x6.15 CASE 506EG ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 4D2N10 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2013 December, 2021 − Rev. 3 1 Publication Order Number: NTMFSC4D2N10MC/D NTMFSC4D2N10MC THERMAL CHARACTERISTICS Symbol Max Unit RqJC Junction−to−Case – Steady State (Note 1) Parameter 1.23 °C/W RqJC Junction−to−Top Source – Steady State (Note 1) 1.5 RqJA Junction−to−Ambient – Steady State (Note 1) 19 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS / TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current 8.5 ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 100 V V mV/°C TJ = 25°C 1 TJ = 125°C 100 IGSS VDS = 0 V, VGS = ±20 V GS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 4.0 V ON CHARACTERISTICS (Note 3) V Gate Threshold Voltage Negative Threshold Temperature Coefficient V Drain−to−Source On Resistance Gate−Resistance /T GS(TH) J R DS(on) ID = 250 mA, ref to 25°C 2.0 −9.4 mV/°C VGS = 10 V, ID = 44 A 3.7 4.3 VGS = 6 V, ID = 22 A 6.0 12 TA = 25°C 1.2 W 2856 pF RG mW CHARGES & CAPACITANCES Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C ISS OSS VGS = 0 V, f = 1 MHz, VDS = 50 V 29 RSS Total Gate Charge Q G(TOT) Total Gate Charge Q G(TOT) Gate−to−Source Charge Q GS Gate−to−Drain Charge Q GD Plateau Voltage V 1670 VGS = 6 V, VDS = 50 V, ID = 44 A 27 nC 42 VGS = 10 V, VDS = 50 V, ID = 44 A GP 12 12 4.9 V 12 ns SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time VGS = 10 V, VDS = 50 V, ID = 44 A, RG = 2.5 W tf 18 30 5.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 44 A TJ = 25°C 0.85 TJ = 125°C 0.73 VGS = 0 V, dIS/dt = 100 A/ms, IS = 44 A V 65.5 ns 100 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFSC4D2N10MC TYPICAL CHARACTERISTICS 100 5.6 V 90 ID, DRAIN CURRENT (A) VGS = 10 V to 7 V 80 ID, DRAIN CURRENT (A) VDS = 10 V 120 5.2 V 70 60 5.0 V 50 40 4.8 V 30 4.6 V 20 0 0.5 1.0 1.5 2.0 2.5 60 40 TJ = 25°C TJ = 125°C Figure 2. Transfer Characteristics 6.0 5.0 4.0 3.0 5 4 6 7 8 9 10 VGS, GATE VOLTAGE (V) 8.0 TJ = 25°C 7.0 6.0 VGS = 6 V 5.0 4.0 VGS = 10 V 3.0 2.0 0 45 65 85 105 125 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E+05 VGS = 10 V ID = 44 A 1.E+04 1.8 TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 25 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.6 1.4 1.2 1.0 1.E+03 TJ = 125°C 1.E+02 TJ = 85°C 1.E+01 0.8 0.6 −50 6 5 Figure 1. On−Region Characteristics 7.0 2.0 4 3 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 44 A 2.2 2 1 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8.0 2.0 80 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 100 20 4.4 V 4.2 V 3.5 3.0 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 140 5.4 V −25 0 25 50 75 100 125 150 175 1.E+00 5 15 25 35 45 55 65 75 85 95 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFSC4D2N10MC 10,000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS C, CAPACITANCE (pF) 1000 COSS 100 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 1000 10 30 20 40 50 60 70 80 100 7 QGS 6 QGD 5 4 3 VDS = 50 V ID = 44 A TJ = 25°C 2 1 0 0 5 15 10 20 100 td(off) tf tr 1 10 100 45 VGS = 0 V 10 1 TJ = 125°C 0.1 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 100 TJ(initial) = 25°C IPEAK (A) 10 10 0.1 0.1 40 35 30 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 10 V VDS = 50 V ID = 44 A 1 25 Figure 7. Capacitance Variation 10 ID, DRAIN CURRENT (A) 8 QG, TOTAL GATE CHARGE (nC) td(on) 1 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 90 IS, SOURCE CURRENT (A) 10 10 VGS ≤ 10 V Single Pulse TC = 25°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 TJ(initial) = 100°C 1 0.5 ms 1 ms 10 ms 100 1000 0.1 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMFSC4D2N10MC TYPICAL CHARACTERISTICS 100 RqJA(t) (°C/W) 10 1 0.1 50% Duty Cycle 20% 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics ORDERING INFORMATION Device NTMFSC4D2N10MC Device Marking Package Shipping† 4D2N DFN8 5x6.15 (Pb−Free/Halogen Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D DATE 25 AUG 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXX ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code 98AON84257G *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5x6.15, 1.27P, DUAL COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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