NTMS4705NR2

NTMS4705N Power MOSFET 30 V, 12 A, Single N-Channel, SO-8 Features • • • • • • • • Low RDS(on) Low Gate Charge Standard SO-8 Single Package Pb-Free Package is Available Notebooks, Graphics Cards Synchronous Rectification High Side Switch DC-DC Converters http://onsemi.com V(BR)DSS RDS(ON) TYP 8.0 mW @ 10 V 30 V 10.5 mW @ 4.5 V 12 A ID MAX (Note 1) Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t v 10 s Power Dissipation (Note 1) Steady State t v 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, Tstg IS EAS ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±20 10 7.2 12 1.52 2.3 7.4 5.3 0.85 36 -55 to 150 3.0 210 W A °C A mJ SO-8 CASE 751 STYLE 12 A W Unit V V A G N-Channel D S MARKING DIAGRAM/ PIN ASSIGNMENT 1 1 8 Drain Drain Drain Drain 4705N AYWWG G Top View Source Source Source Gate Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, Peak IL = 7.5 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4705N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) TL 260 °C ORDERING INFORMATION Device Value 82 55 147 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Unit °C/W NTMS4705NR2 NTMS4705NR2G SO-8 SO-8 (Pb-Free) 2500/Tape & Reel 2500/Tape & Reel Package Shipping† Symbol RqJA RqJA RqJA THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Ambient – Steady State (Note 1) Junction-to-Ambient – t v 10 s (Note 1) Junction-to-Ambient – Steady State (Note 2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 1 October, 2007 - Rev. 3 Publication Order Number: NTMS4705N/D NTMS4705N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 30 15 1.0 50 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.0 5.0 2.5 V mV/°C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A 8.0 10.5 19 10 14 mW Forward Transconductance gFS VDS = 15 V, ID = 10 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 3.0 A TJ = 25°C TJ = 125°C 0.73 0.51 38 VGS = 0 V, dIS/dt = 100 A/ms, IS = 3.0 A 17 21 30 nC ns 1.0 V td(on) tr td(off) tf VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W 7.8 4.7 27 17 ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 10 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 1078 460 127 11 1.1 2.1 5.8 1.76 3.5 W 18 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4705N TYPICAL PERFORMANCE CURVES 30 ID, DRAIN CURRENT (AMPS) 25 20 15 2.6 V 10 5 0 0 2.4 V 5V 3.8 V 3.4 V 3.2 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 42 36 30 24 18 12 6 0 1 2 3 4 5 6 7 8 9 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 3 4 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 TJ = 125°C TJ = 25°C TJ = -55°C VDS ≥ 10 V 3V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 2.5 7.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.018 Figure 2. Transfer Characteristics TJ = 25°C ID = 12 A TJ = 25°C 0.014 VGS = 4.5 V 0.010 VGS = 10 V 0.006 0.002 4 8 16 12 20 ID, DRAIN CURRENT (AMPS) 24 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 ID = 12 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10000 1000000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C TJ = 125°C 100 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4705N TYPICAL PERFORMANCE CURVES VDS = 0 V C, CAPACITANCE (pF) 2000 Ciss VGS = 0 V TJ = 25°C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2500 5 QT 4 QGS 3 QGD VGS 1500 Ciss 1000 Crss Coss Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 2 500 1 0 0 3 ID = 10 A TJ = 25°C 12 6 9 QG, TOTAL GATE CHARGE (nC) 15 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 12 A VGS = 4.5 V t, TIME (ns) 100 tr tf 10 td(off) td(on) 18 15 12 9 6 3 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 1 0.2 0.6 0.8 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) Figure 10. Diode Forward Voltage vs. Current 220 200 180 160 140 120 100 80 60 40 20 0 25 100 50 75 125 TJ, STARTING JUNCTION TEMPERATURE (°C) 150 ID = 10 A Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTMS4705N PACKAGE DIMENSIONS SOIC-8 CASE 751-07 ISSUE AJ -XA 8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 B 1 4 S 0.25 (0.010) M Y M -YG C -ZH D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M ZY S J X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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