NTMS5P02R2

NTMS5P02R2 Power MOSFET −5.4 Amps, −20 Volts P−Channel Enhancement−Mode Single SOIC−8 Package http://onsemi.com Features VDSS −20 V RDS(ON) TYP 26 mW @ −4.5 V ID MAX −5.4 A • High Density Power MOSFET with Ultra Low RDS(on) • • • • • • Providing Higher Efficiency Miniature SOIC−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature Drain−to−Source Avalanche Energy Specified Mounting Information for the SOIC−8 Package is Provided Pb−Free Package is Available Single P−Channel D Applications G S • Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MARKING DIAGRAM & PIN ASSIGNMENT 8 1 SOIC−8 CASE 751 STYLE 13 8 D D DD E5P02x AYWW G G 1 NC S SG E5P02 x A Y WW G = Specific Device Code = Blank or S = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS5P02R2 NTMS5P02R2G Package SOIC−8 SOIC−8 (Pb−Free) Shipping † 2500/Tape & Reel 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTMS5P02R2/D NTMS5P02R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 mW) Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, Peak IL = −8.5 Apk, L = 10 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS RqJA PD ID ID PD ID IDM RqJA PD ID ID PD ID IDM RqJA PD ID ID PD ID IDM TJ, Tstg EAS TL Value −20 −20 ±10 50 2.5 −7.05 −5.62 1.2 −4.85 −28 85 1.47 −5.40 −4.30 0.7 −3.72 −20 159 0.79 −3.95 −3.15 0.38 −2.75 −12 − 55 to +150 360 260 Unit V V V °C/W W A A W A A °C/W W A A W A A °C/W W A A W A A °C mJ °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Minimum FR−4 or G−10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 2 NTMS5P02R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = −16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −16 Vdc, VGS = 0 Vdc, TJ = 125°C) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C) Gate−Body Leakage Current (VGS = −10 Vdc, VDS = 0 Vdc) Gate−Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = −4.5 Vdc, ID = −5.4 Adc) (VGS = −2.5 Vdc, ID = −2.7 Adc) Forward Transconductance (VDS = −9.0 Vdc, ID = −5.4 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge BODY−DRAIN DIODE RATINGS (Note 6) Diode Forward On−Voltage Reverse Recovery Time (IS = −5.4 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Handling precautions to protect against electrostatic discharge is mandatory. 6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature. (IS = −5.4 Adc, VGS = 0 V) (IS = −5.4 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr ta tb QRR − − − − − − −0.95 −0.72 40 20 20 0.03 −1.25 − 75 − − − mC Vdc ns (VDS = −16 Vdc, VGS = −4.5 Vdc, ID = −5.4 Adc) (VDD = −16 Vdc, ID = −5.4 Adc, VGS = −4.5 Vdc, RG = 6.0 W) (VDD = −16 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W) td(on) tr td(off) tf td(on) tr td(off) tf Qtot Qgs Qgd − − − − − − − − − − − 18 25 70 55 22 70 65 90 20 4.0 7.0 35 50 125 100 − − − − 35 − − nC ns ns (VDS = −16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss − − − 1375 510 200 1900 900 380 pF VGS(th) Vdc −0.65 − − − − −0.9 2.9 0.026 0.037 15 −1.25 − 0.033 0.048 − mV/°C W V(BR)DSS Vdc −20 − − − − − − − −15 − − −0.2 − − − − −1.0 −10 − −100 nAdc 100 mV/°C mAdc Symbol Min Typ Max Unit IDSS IGSS IGSS nAdc RDS(on) gFS Mhos http://onsemi.com 3 NTMS5P02R2 12 −ID, DRAIN CURRENT (AMPS) 10 8 6 4 2 0 0 −1.7 V VGS = −1.3 V 0.25 0.5 0.75 1 1.25 1.5 1.75 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2 −8 V −2.3 V −4.5 V −3.7 V −3.1 V −2.7 V −2.5 V 12 −ID, DRAIN CURRENT (AMPS) TJ = 25°C −2.1 V VDS ≥ −10 V 10 8 6 4 2 0 1 1.5 2 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 −1.9 V 100°C 25°C TJ = −55°C Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.08 ID = −5.4 A TJ = 25°C 0.06 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.05 Figure 2. Transfer Characteristics TJ = 25°C 0.04 VGS = −2.5 V VGS = −2.7 V 0.03 VGS = −4.5 V 0.02 0.04 0.02 0 0 8 2 4 6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 0.01 2 4 8 10 6 −ID, DRAIN CURRENT (AMPS) 12 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance versus Gate−To−Source Voltage 1.6 1.4 1.2 1 0.8 0.6 −50 ID = −5.4 A VGS = −4.5 V 10,000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V −IDSS, LEAKAGE (nA) TJ = 150°C 1000 TJ = 125°C −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 100 2 4 6 8 10 12 14 16 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 4 NTMS5P02R2 −VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) VDS = 0 V Ciss VGS = 0 V TJ = 25°C 5 4 3 2 1 0 ID = −5.4 A TJ = 25°C QT −VDS Q1 Q2 −VGS 20 16 12 8 4 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4000 C, CAPACITANCE (pF) 3000 Crss 2000 Ciss 1000 Crss 10 5 0 −VGS −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5 10 15 20 Coss 0 0 4 8 12 16 20 24 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 −IS, SOURCE CURRENT (AMPS) VDD = −16 V ID = −5.4 A VGS = −4.5 V t, TIME (ns) 5 4 3 2 1 0 VGS = 0 V TJ = 25°C td(off) tf tr 100 td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current DRAIN−TO−SOURCE DIODE CHARACTERISTICS 100 ID , DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 10 di/dt 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 IS trr ta tb TIME dc 100 tp IS 0.25 IS 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Diode Reverse Recovery Waveform http://onsemi.com 5 NTMS5P02R2 TYPICAL ELECTRICAL CHARACTERISTICS 10 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 Chip 0.0163 W 0.1 Normalized to qja at 10s. 0.0652 W 0.1988 W 0.6411 W 0.9502 W 0.01 0.0307 F 0.1668 F 0.5541 F 1.9437 F 72.416 F 0.001 SINGLE PULSE 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 Ambient 1.0E+03 Figure 13. Thermal Response http://onsemi.com 6 NTMS5P02R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− A 8 5 B 1 S 4 0.25 (0.010) M Y M −Y− G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8_ N 0.25 0.50 S 5.80 6.20 STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C −Z− H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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