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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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MOSFET - Power,
N-Channel, SUPERFET) III,
FRFET)
650 V, 24 A, 150 mW
NTMT150N65S3HF
www.onsemi.com
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
VDSS
RDS(ON) MAX
ID MAX
650 V
150 mW @ 10 V
24 A
D
G
S1: Driver Source
S2: Power Source
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 121 mW
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
Applications
•
•
•
•
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
Lighting
S1
S2
POWER MOSFET
S2
S2
S1
G
Power88
PQFN4 8X8 2P
CASE 483AP
MARKING DIAGRAM
NTMT150
N65S3HF
AWLYWW
NTMT150N65S3HF = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
November, 2020 − Rev. 0
1
Publication Order Number:
NTMT150N65S3HF/D
NTMT150N65S3HF
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
Value
Unit
650
V
− DC
±30
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
24
− Continuous (TC = 100°C)
15.2
IDM
Drain Current
60
A
EAS
Single Pulsed Avalanche Energy (Note 2)
275
mJ
IAS
Avalanche Current (Note 2)
3.8
A
EAR
Repetitive Avalanche Energy (Note 1)
1.92
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
TJ, TSTG
TL
− Pulsed (Note 1)
A
Power Dissipation
(TC = 25°C)
192
W
− Derate Above 25°C
1.54
W/°C
−55 to +150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 3.8 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 12 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
0.65
°C/W
RqJA
Thermal Resistance, Junction to Ambient, Max., (Note 4)
45
4. Device on 1 in2 2−oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping†
NTMT150N65S3HF
NTMT150N65S3HF
Power88
13″
13.3 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NTMT150N65S3HF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
V
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
IGSS
Gate to Body Leakage Current
0.62
V/_C
10
mA
±100
nA
5.0
V
150
mW
10
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 0.54 mA
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 12 A
121
Forward Transconductance
VDS = 20 V, ID = 12 A
14
S
1985
pF
40
pF
gFS
3.0
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
400
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
71
pF
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
43
nC
VDS = 400 V, ID = 12 A, VGS = 10 V
(Note 5)
13
nC
17
nC
f = 1 MHz
3.1
W
24
ns
12
ns
60
ns
3.1
ns
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
VDD = 400 V, ID = 12 A, VGS = 10 V
Rg = 4.7 W
(Note 5)
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Maximum Continuous Source to Drain Diode Forward Current
24
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
60
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 12 A
1.3
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 12 A,
dIF/dt = 100 A/ms
IS
80
ns
285
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NTMT150N65S3HF
TYPICAL CHARACTERISTICS
250 ms Pulse Test
TC = 25°C
8.0 V
60
VGS = 10 V
VDS = 20 V
250 ms Pulse Test
7.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
80
6.5 V
10
6.0 V
5.5 V
1
10
TJ = 25°C
TJ = 150°C
0.2
1
10
1
20
0.25
0.20
VGS = 10 V
VGS = 20 V
0.15
14
28
42
VGS = 0 V
250 ms Pulse Test
TJ = 150°C
1
TJ = 25°C
0.1
0.01
TJ = −55°C
0
0.5
1.0
1.5
2.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
VGS, GATE−SOURCE VOLTAGE (V)
CAPACITANCE (pF)
9
ID, DRAIN CURRENT (A)
10K
Ciss
1K
100
0.1
8
7
10
0.001
70
56
100K
1
6
Figure 2. Transfer Characteristics
TC = 25°C
10
5
Figure 1. On−Region Characteristics
100
0
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.30
0.10
3
TJ = −55°C
VDS, DRAIN−SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
RDS(on), DRAIN−SOURCE ON−RESISTANCE (W)
0.1
Coss
VGS = 0 V
f = 1 MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
1
10
100
1K
VDS = 130 V
ID = 12 A
VDS = 400 V
8
6
4
2
0
0
10
20
30
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
50
NTMT150N65S3HF
1.2
3.0
VGS = 0 V
ID = 15 mA
RDS(on), DRAIN−SOURCE
ON−RESISTANCE (Normalized)
BVDSS, DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE (Normalized)
TYPICAL CHARACTERISTICS
1.1
1.0
0.9
0.8
−50
0
50
100
ID = 12 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0
150
−50
0
50
150
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
100
24
100 ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30 ms
10
1 ms
Operation in this Area
is Limited by RDS(on)
10 ms
1
DC
TC = 25°C
TJ = 150°C
Single Pulse
0.1
1
10
100
18
12
6
0
1000
25
EOSS (mJ)
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
9
6
3
0
75
VDS, DRAIN−SOURCE VOLTAGE (V)
12
0
50
130
260
390
520
650
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
www.onsemi.com
5
NTMT150N65S3HF
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t1
0.01
Single Pulse
0.001
0.00001
0.0001
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.65°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.001
0.1
0.01
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
10
100
1000
NTMT150N65S3HF
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
7
Time
NTMT150N65S3HF
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
8
NTMT150N65S3HF
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE O
www.onsemi.com
9
DATE 30 SEP 2016
NTMT150N65S3HF
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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10
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