MOSFET – Power, Single
N-Channel
40 V, 0.45 mW, 558 A
NTMTS0D4N04C
Features
•
•
•
•
•
Small Footprint (8x8 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Power 88 Package, Industry Standard
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
40 V
0.45 mW @ 10 V
558 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
D (5−8)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
558
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Pulsed Drain Current
PD
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2)
394.8
Steady
State
S (2−4)
W
A
79.8
56.4
PD
TA = 100°C
W
5.0
2.5
IDM
900
A
TJ, Tstg
−55 to
+ 175
°C
IS
203.4
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 70 A)
EAS
4454
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
N−CHANNEL MOSFET
122.0
ID
TA = 100°C
TA = 25°C
244.0
G (1)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DFNW8
CASE 507AP
MARKING DIAGRAM
XXXXXXXX
AWLYWW
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
Value
Unit
RqJC
0.61
°C/W
RqJA
30
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
XXX = Device Code
(8 A−N characters max)
A
= Assembly Location
WL = 2−digit Wafer Lot Code
Y
= Year Code
WW = Work Week Code
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
March, 2020 − Rev. 5
1
Publication Order Number:
NTMTS0D4N04C/D
NTMTS0D4N04C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
7.78
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
2.0
4.0
−8.49
VGS = 10 V
gFS
ID = 50 A
VDS =15 V, ID = 50 A
0.38
V
mV/°C
0.45
300
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
16500
VGS = 0 V, f = 0.1 MHz, VDS = 20 V
8310
pF
390
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
Threshold Gate Charge
QG(TH)
40.0
Gate−to−Source Charge
QGS
62.6
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
4.08
V
Gate Resistance
RG
0.9
W
td(ON)
55.2
VGS = 10 V, VDS = 20 V; ID = 50 A
251
nC
49.0
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 6 W
tf
50.8
ns
200
78.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.75
TJ = 125°C
0.58
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
120
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
60
ns
60
338
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMTS0D4N04C
TYPICAL CHARACTERISTICS
1000
900
600
5.2 V
500
400
4.8 V
300
4.6 V
200
4.4 V
100
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
800
700
0.5
0
1.0
2.0
1.5
700
600
500
400
TJ = 25°C
300
200
TJ = 125°C
0
2
3
TJ = −55°C
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
5
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.0
0.8
0.6
VGS = 10 V
0.4
0.2
0
10
VGS = 10 V
ID = 50 A
1.0
110 160 210 260 310 360 410 460 510
ID, DRAIN CURRENT (A)
TJ = 175°C
4E−04
1.5
60
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, REVERSE LEAKAGE CURRENT (A)
2.0
6
TJ = 25°C
ID = 50 A
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.8
4
800
0
2.5
2.0
0.2
0
VDS = 10 V
100
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
1000
VGS = 6 V to 10 V
900
TJ = 150°C
4E−05
TJ = 125°C
4E−06
TJ = 85°C
4E−07
0.5
TJ = 25°C
4E−08
0
−50
−25
0
25
50
75
100
125
150 175
4E−09
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, REVERSE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
35
NTMTS0D4N04C
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
100K
C, CAPACITANCE (pF)
CISS
10K
COSS
1K
VGS = 0 V
TJ = 25°C
f = 0.1 MHz
100
0.01
CRSS
0.1
10
1
10
9
8
7
6
QGS
5
QGD
4
3
VDS = 20 V
TJ = 25°C
ID = 50 A
2
1
0
100
50
0
150
100
250
200
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
t, SWITCHING TIME (ns)
VGS = 10 V
VDS = 20 V
ID = 50 A
IS, REVERSE DRAIN CURRENT (A)
1E−05
td(off)
1E−06
tf
tr
td(on)
1E−07
1E−08
10
20
40
30
VGS = 0 V
30.1
20.1
TJ = 125°C
10.1
TJ = 25°C
TJ = −55°C
0.1
0
50
0.2
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
100
0.5 ms
1 ms
10
1
0.1
0.1
TC = 25°C
Single Pulse
VGS ≤ 10 V
IPEAK (A)
ID, DRAIN CURRENT(A)
10 ms
100
RDS(on) Limit
Thermal Limit
Package Limit
10
TJ(initial) = 100°C
10
10 ms
1
TJ(initial) = 25°C
1
0.00001
100
0.0001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.001
NTMTS0D4N04C
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
0.001
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMTS0D4N04CTXG
Marking
Package
Shipping†
0D4N04C
POWER 88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
CASE 507AP
ISSUE D
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX
A
WL
Y
WW
= Specific Device Code
= Assembly Location
= Wafer Lot Code
= Year Code
= Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80534G
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
PAGE 1 OF 1
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