NTMTS0D6N04CTXG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTMTS0D6N04C Power MOSFET 40 V, 0.48 mW, 533 A, Single N−Channel Features • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 0.48 mW @ 10 V 533 A D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 533 A Parameter Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Steady State Continuous Drain Current RqJA (Notes 1, 2) Steady State Power Dissipation RqJA (Notes 1, 2) Steady State Pulsed Drain Current TA = 25°C, tp = 10 ms TC = 25°C TC = 100°C TC = 25°C W 245 122.7 ID TA = 100°C TA = 25°C A 76 54 PD TA = 100°C W 5.0 2.5 IDM 900 A TJ, Tstg −55 to +175 °C IS 204.5 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 53 A) EAS 2058 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 0.61 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 30.2 1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2018 January, 2019 − Rev. 1 S (2−4) N−CHANNEL MOSFET 377 PD TC = 100°C TA = 25°C G (1) 1 POWER 88 CASE 507AP MARKING DIAGRAM 0D6N04C AWLYWW A WL Y WW = Assembly Location = 2−digit Wafer Lot Code = Year Code = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTMTS0D6N04C/D NTMTS0D6N04C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 40 V V 13.19 mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 2.0 4.0 −8.28 0.39 V mV/°C 0.48 mW Forward Transconductance gFS VDS =5 V, ID = 50 A 233 S Gate Resistance RG TA = 25°C 1.0 W CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 11800 Reverse Transfer Capacitance CRSS 199 Total Gate Charge QG(TOT) 187 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = 20 V VGS = 10 V, VDS = 20 V; ID = 50 A 7030 pF 29.7 nC 46.6 38.2 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 33.6 VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 27.9 ns 86.0 32.3 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.757 TJ = 125°C 0.603 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 105 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 60 ns 45 274 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMTS0D6N04C TYPICAL CHARACTERISTICS 400 280 4.5 V 240 200 160 120 80 4.0 V 40 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 320 3 2 1 4 400 300 TJ = 25°C 200 TJ = 125°C 2 2.0 1.5 1.0 0.5 6 5 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.0 0.9 TJ = 25°C ID = 50 A 0.8 0.7 0.6 0.5 VGS = 10 V 0.4 0.3 0.2 0.1 0 5 15 1E+06 IDSS, LEAKAGE CURRENT (nA) 0.8 85 75 95 TJ = 125°C TJ = 85°C 1E+03 1.0 65 TJ = 150°C 1E+04 1.2 55 TJ = 175°C 1E+05 1.4 45 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 VGS = 10 V ID = 50 A 35 25 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 7 6 Figure 2. Transfer Characteristics 2.5 1E+02 0.6 0.4 TJ = 25°C 1E+01 0.2 0 −55 5 Figure 1. On−Region Characteristics 3.0 1.6 TJ = −55°C 4 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 1.8 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3.5 4 500 0 5 4.0 0 600 100 3.6 V 0 VDS = 10 V 700 4.8 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 800 VGS = 6 V to 10 V 360 −25 0 25 50 75 100 125 150 175 1E+00 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMTS0D6N04C TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 100K C, CAPACITANCE (pF) COSS 10K CISS VGS = 0 V TJ = 25°C f = 1 MHz 1K CRSS 100 0 10 20 40 30 8 7 6 QGS 5 QGD 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 20 0 60 40 100 80 120 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 1E−06 VGS = 0 V IS, SOURCE CURRENT (A) t, SWITCHING TIME (s) VGS = 10 V VDS = 20 V ID = 50 A td(off) tf 1E−07 td(on) tr 1E−08 TJ = 175°C TJ = 150°C 1 TJ = 25°C 3 1 5 7 9 TJ = −55°C TJ = 125°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 TJ(initial) = 25°C 10 ms 100 100 10 TC = 25°C Single Pulse VGS ≤ 10 V 1 0.1 IPEAK (A) ID, DRAIN CURRENT(A) 10 0.5 ms 1 ms TJ(initial) = 100°C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1000 1 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMTS0D6N04C TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMTS0D6N04CTXG Marking Package Shipping† 0D6N04C POWER 88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMTS0D6N04C PACKAGE DIMENSIONS DFNW8 8.3x8.4, 2P CASE 507AP ISSUE O www.onsemi.com 6 NTMTS0D6N04C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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