MOSFET – Power, Single
N-Channel
40 V, 0.67 mW, 420 A
NTMTS0D7N04C
Features
•
•
•
•
•
Small Footprint (8x8 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Power 88 Package, Industry Standard
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
40 V
0.67 mW @ 10 V
420 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
Pulsed Drain Current
Value
Unit
VDSS
40
V
VGS
±20
V
ID
420
A
TC = 100°C
TC = 25°C
Steady
State
PD
W
205
103
ID
TA = 100°C
TA = 25°C
N−CHANNEL MOSFET
PD
W
4.9
2.5
900
A
TJ, Tstg
−55 to
+175
°C
IS
171
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 40 A)
EAS
1446
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
S (2−4)
A
65
IDM
Operating Junction and Storage Temperature
Range
G (1)
46
TA = 100°C
TA = 25°C, tp = 10 ms
D (5−8)
297
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Symbol
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DFNW8
TX SUFFIX
CASE 507AP
MARKING DIAGRAM
XXXXXXXX
AWLYWW
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
Parameter
RqJC
0.73
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
30.4
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
XXX = Device Code
(8 A−N characters max)
A
= Assembly Location
WL = 2−digit Wafer Lot Code
Y
= Year Code
WW = Work Week Code
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
October, 2020 − Rev. 6
1
Publication Order Number:
NTMTS0D7N04C/D
NTMTS0D7N04C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
20
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
2.0
4.0
−8.5
VGS = 10 V
gFS
ID = 50 A
VDS =5 V, ID = 50 A
0.57
V
mV/°C
0.67
200
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
9230
VGS = 0 V, f = 1 MHz, VDS = 25 V
4730
pF
126
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
Threshold Gate Charge
QG(TH)
22.7
Gate−to−Source Charge
QGS
37
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
4.28
td(ON)
28.9
VGS = 10 V, VDS = 20 V; ID = 50 A
140
nC
28.3
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 6 W
tf
18.1
ns
61.0
20.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.77
TJ = 125°C
0.65
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
83
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
58
ns
25
191
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMTS0D7N04C
TYPICAL CHARACTERISTICS
7 V to 10 V
900
6V
800
700
600
500
400
300
5V
200
100
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
4V
0
0.5
1.0
2.0
1.5
2.5
3.0
VDS = 3 V
800
700
600
500
400
TJ = 25°C
300
200
100
0
TJ = 125°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5.5
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
TJ = 25°C
VGS = 10 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
VGS = 10 V
ID = 50 A
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
25
50
75
100
125
10
20
30
40
50
60
70
90 100
80
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, REVERSE LEAKAGE CURRENT (A)
1.8
6.0
1.0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
5.0
Figure 2. Transfer Characteristics
1.8
1.6
4.5
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 50 A
1.7
3.5
3.0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2.0
0.2
900
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
1000
IDS, DRAIN−TO−SOURCE CURRENT (A)
1000
150 175
1.E−03
TJ = 175°C
TJ = 150°C
1.E−04
TJ = 125°C
1.E−05
TJ = 85°C
1.E−06
1.E−07
TJ = 25°C
1.E−08
1.E−09
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, REVERSE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMTS0D7N04C
TYPICAL CHARACTERISTICS
CISS
10K
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
100K
COSS
1K
CRSS
100
10
1
VGS = 0 V
f = 1 MHz
1
0.1
10
7
6
QGS
5
QGD
4
3
2
VDS = 20 V
ID = 50 A
1
0
20
0
40
100
1
10
140
VGS = 0 V
10
1
100
TJ = 25°C
0.1
TJ = 150°C
0.01
0.001
TJ = −55°C
TJ = 125°C
0
0.2
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
10 ms
100
TJ(initial) = 25°C
IPEAK (A)
100
0.1
0.1
120
100
10
1
100
Figure 8. Gate−to−Source vs. Total Gate
Charge
tf
tr
td(on)
10
80
60
Figure 7. Capacitance Variation
IS, REVERSE DRAIN CURRENT (A)
t, SWITCHING TIME (ns)
8
QG, TOTAL GATE CHARGE (nC)
td(off)
ID, DRAIN CURRENT (A)
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
0.5 ms
1 ms
10 ms
TC = 25°C
Single Pulse
VGS ≤ 10 V
TJ(initial) = 100°C
10
RDS(on) Limit
Thermal Limit
Package Limit
1
1
0.00001
100
10
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NTMTS0D7N04C
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA(t) (°C/W)
10
1
0.1
20%
10%
5%
2%
1%
0.01
Single Pulse
0.001
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+02
1E+01
1E+03
PULSE TIME (sec)
Figure 13. Thermal Characteristics − RqJA(t) (5C/W)
10
RqJC(t) (°C/W)
1
50% Duty Cycle
20%
0.1 10%
5%
2%
0.01
1%
Single Pulse
0.001
0.000001
TC = 25°C
0.0001
0.00001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 14. Thermal Characteristics − RqJC(t) (5C/W)
DEVICE ORDERING INFORMATION
Device
NTMTS0D7N04CTXG
Marking
Package
Shipping†
0D7N04C
POWER 88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
CASE 507AP
ISSUE D
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX
A
WL
Y
WW
= Specific Device Code
= Assembly Location
= Wafer Lot Code
= Year Code
= Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80534G
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
PAGE 1 OF 1
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