MOSFET - Power, Single
N-Channel
60 V, 0.68 mW, 477 A
NTMTS0D7N06CL
Features
•
•
•
•
•
Small Footprint (8x8 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Power 88 Package, Industry Standard
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
0.68 mW @ 10 V
60 V
0.90 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
477
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Pulsed Drain Current
PD
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2)
337.6
Steady
State
ID
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
477 A
D (5−8)
G (1)
S (2−4)
N−CHANNEL MOSFET
A
62.2
44.0
PD
5.0
IDM
900
A
TJ, Tstg
−55 to
+175
°C
TA = 100°C
TA = 25°C, tp = 10 ms
W
147.3
TA = 100°C
TA = 25°C
294.6
ID MAX
W
2.5
IS
245.5
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 40 A)
EAS
1754
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
DFNW8
CASE 507AP
MARKING DIAGRAM
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXXXX
AWLYWW
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.5
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
30
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
XXX = Device Code
(8 A−N characters max)
A
= Assembly Location
WL = 2−digit Wafer Lot Code
Y
= Year Code
WW = Work Week Code
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
October, 2020 − Rev. 3
1
Publication Order Number:
NTMTS0D7N06CL/D
NTMTS0D7N06CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA. ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 60 V
V
16.8
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
ID = 250 mA. ref to 25°C
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
RDS(on)
1.0
2.5
−5.63
VGS = 10 V
ID = 50 A
0.52
0.68
VGS = 4.5 V
ID = 50 A
0.69
0.90
Forward Transconductance
gFS
VDS =15 V, ID = 50 A
Gate Resistance
RG
TA = 25°C
V
mV/°C
310
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
16200
VGS = 0 V, f = 1 MHz, VDS = 25 V
8490
pF
270
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
103
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
225
Threshold Gate Charge
QG(TH)
21.6
Gate−to−Source Charge
QGS
36.5
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.46
td(ON)
35.3
VGS = 10 V, VDS = 30 V; ID = 50 A
nC
20.7
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 30 V,
ID = 50 A, RG = 6 W
tf
26.3
ns
263
60.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.67
TJ = 125°C
0.59
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
115
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
70
ns
45
307
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMTS0D7N06CL
TYPICAL CHARACTERISTICS
400
VDS = 10 V
VGS = 3.6 to 10 V
320
3.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
600
3.2 V
360
280
240
200
2.8 V
160
120
80
40
0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.8
1.6
2.0
200
TJ = 25°C
100
TJ = 125°C
0
TJ = −55°C
2
3
4
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
0.8
0.6
0.4
0.2
5
4
6
7
8
10
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.2
TJ = 25°C
ID = 50 A
1.0
0.8
VGS = 4.5 V
0.6
VGS = 10 V
0.4
0.2
0
10
30
50
70
90
110
130
150
170 190
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1E−02
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE CURRENT (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.0
3
300
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.2
0
400
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
500
1E−03
1.5
TJ = 175°C
TJ = 150°C
1E−04
1.0
TJ = 125°C
1E−05
0.5
0
−50
TJ = 85°C
1E−06
−25
0
25
50
75
100
125
150 175
1E−07
5
15
25
35
45
55
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMTS0D7N06CL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
100K
C, CAPACITANCE (pF)
CISS
COSS
10K
1K
CRSS
100
0.01
1E−05
0.1
10
1
100
4
QGS
QGD
VDS = 30 V
TJ = 25°C
ID = 50 A
2
0
0
25
50
75
100
125
150
175
200
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VGS = 0 V
td(off)
t, TIME (ns)
tf
tr
1E−07
td(on)
22
12
42
32
10
TJ = 175°C
TJ = 150°C
TJ = 125°C
1
TJ = 25°C
0.1
TJ = −55°C
0
0.2
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
TJ(initial) = 25°C
10 ms
100
100
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
IPEAK (A)
ID, DRAIN CURRENT(A)
6
Figure 7. Capacitance Variation
VGS = 10 V
VDS = 30 V
ID = 50 A
2
8
QG, TOTAL GATE CHARGE (nC)
1E−06
1E−08
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
12
0.5 ms
1 ms
10 ms
10
100
1000
1
TJ(initial) = 100°C
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMTS0D7N06CL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
0.001
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics − RqJA(t) (5C/W)
10
RqJC(t) (°C/W)
1
50% Duty Cycle
0.1
0.01
20%
10%
5%
2%
1%
0.001
TC = 25°C
Single Pulse
0.000001
0.00001
0.001
0.0001
0.01
1
0.1
PULSE TIME (sec)
Figure 14. Thermal Characteristics − RqJC(t) (5C/W)
DEVICE ORDERING INFORMATION
Device
NTMTS0D7N06CLTXG
Marking
Package
Shipping†
0D7N06CL
DFNW8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
CASE 507AP
ISSUE D
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX
A
WL
Y
WW
= Specific Device Code
= Assembly Location
= Wafer Lot Code
= Year Code
= Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80534G
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TDFNW8 8.3x8.4, 2.0P, SINGLE COOL
PAGE 1 OF 1
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