NTMTS0D7N06CTXG

MOSFET - Power, Single N-Channel, DFNW8 60 V, 0.72 mW, 464 A NTMTS0D7N06C Features • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 60 V 0.72 mW @ 10 V 464 A Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) TC = 25°C Symbol Value Unit VDSS 60 V VGS ±20 V ID 464 A TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TA = 25°C 294.6 W 147.3 ID TA = 100°C TA = 25°C A 60.5 42.7 PD TA = 100°C W 5.0 900 A TJ, Tstg −55 to +175 °C IS 245.5 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 40 A) EAS 1754 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case − Steady State (Note 2) Junction−to−Ambient − Steady State (Note 2) DFNW8 CASE 507AP 2.5 IDM TA = 25°C, tp = 10 ms S (2−4) N−CHANNEL MOSFET 328.1 PD TC = 100°C Steady State G (1) Symbol Value Unit RqJC 0.5 °C/W RqJA 30 MARKING DIAGRAM 0D7N06C AWLYWW A WL Y WW = Assembly Location = 2−digit Wafer Lot Code = Year Code = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. in2 1. Surface−mounted on FR4 board using a 1 pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2018 December, 2020 − Rev. 3 1 Publication Order Number: NTMTS0D7N06C/D NTMTS0D7N06C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 60 V V 24.7 mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 2.0 4.0 −7.93 0.55 V mV/°C 0.72 mW Forward Transconductance gFS VDS =5 V, ID = 50 A 250 S Gate Resistance RG TA = 25°C 1.0 W CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 174 Threshold Gate Charge QG(TH) 25.7 Gate−to−Source Charge QGS 40.0 Gate−to−Drain Charge QGD Total Gate Charge Voltage Plateau Total Gate Charge 11535 VGS = 0 V, f = 1 MHz, VDS = 30 V VGS = 10 V, VDS = 30 V; ID = 50 A 8010 pF nC 20.7 QG(TOT) 152 VGP 3.71 V 72 nC QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 50 A SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 39.7 VGS = 10 V, VDS = 30 V, ID = 50 A, RG = 6 W tf 29.3 ns 127 42.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.72 TJ = 125°C 0.59 tRR ta tb 1.2 V 120 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 60 ns 60 324 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMTS0D7N06C TYPICAL CHARACTERISTICS 1000 10 V 800 6.0 V 700 600 500 4.5 V 400 300 200 0 3.6 V 500 400 300 TJ = 25°C 200 1 0 2 4 3 0 6 5 0 2 TJ = −55°C 3 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.1 1.0 0.9 0.8 0.7 0.6 0.5 6 5 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.2 6 TJ = 25°C ID = 50 A 1.0 0.8 VGS = 10 V 0.6 0.4 0.2 0 10 90 170 250 330 410 490 570 650 730 810 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.00 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1E+00 1E−01 IDSS, LEAKAGE CURRENT (nA) VGS = 10 V ID = 50 A 1.75 1E−02 1E−04 TJ = 175°C TJ = 150°C 1E−05 TJ = 125°C 1E−06 TJ = 85°C 1E−03 1.50 1.25 1.00 1E−07 1E−08 0.75 0.50 1 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 4 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.2 0.4 600 100 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 800 VDS = 10 V 700 VGS = 5.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 900 TJ = 25°C 1E−09 0 25 50 75 100 125 150 175 1E−10 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMTS0D7N06C TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 100K CISS C, CAPACITANCE (pF) 10K COSS 1K 100 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 0.01 0.1 10 1 10 9 8 7 6 5 QGS 3 VDS = 30 V TJ = 25°C ID = 50 A 2 1 0 100 0 100 80 120 140 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 50 VGS = 0 V IS, SOURCE CURRENT (A) tf tr td(on) 100 VGS = 10 V VDS = 30 V ID = 50 A 2 6 10 14 18 22 26 30 34 38 42 46 40 TJ = 175°C 30 TJ = 150°C 20 TJ = 25°C 10 0 50 TJ = 125°C TJ = −55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 TJ(initial) = 25°C 10 ms 100 100 10 1 0.1 0.1 0.5 ms 1 ms 10 ms TC = 25°C Single Pulse VGS ≤ 10 V RDS(on) Limit Thermal Limit Package Limit 1 10 1 100 10 IPEAK (A) t, TIME (ns) 60 40 QG, TOTAL GATE CHARGE (nC) td(off) ID, DRAIN CURRENT(A) 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 QGD 4 TJ(initial) = 100°C 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMTS0D7N06C TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMTS0D7N06CTXG Marking Package Shipping† 0D7N06C DFNW8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2.0P, SINGLE COOL CASE 507AP ISSUE D DATE 29 MAR 2021 GENERIC MARKING DIAGRAM* XXXX A WL Y WW = Specific Device Code = Assembly Location = Wafer Lot Code = Year Code = Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON80534G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TDFNW8 8.3x8.4, 2.0P, SINGLE COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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