NTMTSC002N10MCTXG

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 100 V 2.0 mW @ 10 V 236 A 100 V, 2.0 mW, 236 A NTMTSC002N10MC D (5−8) Features • • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses New Power 88 Dual Cool Package These Devices are Pb−Free and are RoHS Compliant G (1) S (2−4) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 236 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 167 Steady State TA = 100°C TA = 25°C W 255 MARKING DIAGRAM 128 ID TDFNW8 CASE 507AN A 29 20 PD TA = 100°C W 3.9 1.9 IDM 900 A 002N10M AWLYW TJ, Tstg −55 to +175 °C IS 213 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.2 A) EAS 2223 mJ 002N10M = Specific Device Code A = Assembly Location WL = Wafer Lot Code Y = Year Code W = Work Week Code Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case, Bottom − Steady State RqJCB 0.6 °C/W Junction−to−Case, Top − Steady State RqJCT 0.9 Junction−to−Ambient − Steady State (Note 2) RqJA 38 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2020 September, 2021 − Rev. 1 1 Publication Order Number: NTMTSC002N10MC/D NTMTSC002N10MC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 68.7 VGS = 0 V, VDS = 100 V mV/°C TJ = 25 °C 5 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 520 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 −9.86 VGS = 6 V ID = 46 A VGS = 10 V ID = 90 A gFS VDS =5 V, ID = 93 A 5.3 1.7 V mV/°C 2.0 180 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 6305 VGS = 0 V, f = 1 MHz, VDS = 50 V 3405 pF 37 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 50 V; ID = 93 A Threshold Gate Charge QG(TH) 17 Gate−to−Source Charge QGS 28 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.8 td(ON) 29 VGS = 10 V, VDS = 50 V; ID = 93 A 89 nC 21 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 50 V, ID = 93 A, RG = 6 W tf 19 ns 59 26 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 90 A TJ = 25°C 0.84 TJ = 125°C 0.72 tRR Charge Time ta Discharge Time tb VGS = 0 V, dIS/dt = 100 A/ms, IS = 46 A 24 QRR 44 tRR 38 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 1000 A/ms, IS = 46 A QRR ns 26 Reverse Recovery Time ta V 49 Reverse Recovery Charge Charge Time 1.2 21 nC ns 18 310 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMTSC002N10MC TYPICAL CHARACTERISTICS 250 250 VGS = 10 to 6 V ID, DRAIN CURRENT (A) 150 100 5.0 V 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 200 150 50 4.5 V 4.0 V 0 2 1 3 4 0 5 0 5 4 3 6 5 8 7 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 6 7 8 9 10 4 VGS = 6 V 3 2 VGS = 10 V 1 0 60 10 110 210 160 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current 100K ID = 90 A VGS = 10 V TJ = 150°C 10K 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 5 TJ = 25°C Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −50 TJ = −55°C 4 3 Figure 2. Transfer Characteristics 10 2.2 2 Figure 1. On−Region Characteristics 15 2.4 1 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 90 A 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 0 TJ = 25°C 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 5.5 V 200 TJ = 125°C 1K TJ = 85°C 100 10 TJ = 25°C 1 0.1 0.01 −25 0 25 50 75 100 125 150 175 0.001 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMTSC002N10MC 100K CISS C, CAPACITANCE (pF) 10K COSS 1K 100 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 1 0 10 30 20 50 40 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 12 10 8 6 QGS 4 VDS = 50 V ID = 93 A TJ = 25°C 2 0 70 80 90 100 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) 60 Figure 8. Gate−to−Source Voltage vs. Total Charge td(on) 1 tr 50 TJ = 175°C TJ = 150°C TJ = 125°C TJ = 25°C TJ = −55°C 5 1 10 100 0.1 0.3 0.5 0.9 0.7 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 Figure 7. Capacitance Variation tf 100 10 ms 10 TC = 25°C Single Pulse VGS ≤ 10 V 1 0.1 40 QG, TOTAL GATE CHARGE (nC) td(off) 0.1 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 10 V VDS = 50 V ID = 83 A 10 20 10 0 1000 100 QGD RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.5 ms 1 ms 10 ms 1000 100 100 TJ(initial) = 25°C 10 1 TJ(initial) = 100°C 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMTSC002N10MC TYPICAL CHARACTERISTICS 1 50% Duty Cycle ZqJC (°C/W) 20% 0.1 10% 5% 0.01 2% 1% Single Pulse 0.001 0.000001 0.00001 0.001 0.0001 0.01 1 0.1 t, PULSE TIME (sec) Figure 13. Junction−to−Ambient Transient Thermal Response DEVICE ORDERING INFORMATION Device NTMTSC002N10MCTXG Marking Package Shipping† 002N10M POWER 88 Dual Cool (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMTSC002N10MC PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2P CASE 507AN ISSUE B www.onsemi.com 6 NTMTSC002N10MC onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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