NTMTSC1D6N10MCTXG

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 100 V 1.7 mW @ 10 V 267 A 100 V, 1.7 mW, 267 A NTMTSC1D6N10MC D (5−8) Features • • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses New Power 88 Dual Cool Package These Devices are Pb−Free and are RoHS Compliant G (1) S (2−4) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 267 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) 189 PD TC = 100°C TA = 25°C Steady State W 291 ID A 30 21 PD 3.9 IDM 900 A TJ, Tstg −55 to +175 °C IS 243 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 22.3 A) EAS 1550 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current TA = 100°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) MARKING DIAGRAM 145 TA = 100°C TA = 25°C TDFNW8 CASE 507AS W 1.9 1D6N10M AWLYW 1D6N10M = Specific Device Code A = Assembly Location WL = Wafer Lot Code Y = Year Code W = Work Week Code ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Bottom − Steady State RqJCB 0.5 °C/W Junction−to−Case − Top − Steady State RqJCT 0.8 Junction−to−Ambient − Steady State (Note 2) RqJA 38 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 September, 2021 − Rev. 1 1 Publication Order Number: NTMTSC1D6N10MC/D NTMTSC1D6N10MC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 64.5 VGS = 0 V, VDS = 100 V mV/°C TJ = 25 °C 5 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 650 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 −10 VGS = 10 V ID = 90 A VGS = 6 V ID = 58 A gFS VDS =5 V, ID = 100 A 1.42 V mV/°C 1.7 4.3 233 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 7630 VGS = 0 V, f = 100 KHz, VDS = 50 V 4260 pF 80 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 50 V; ID = 116 A Threshold Gate Charge QG(TH) 20 Gate−to−Source Charge QGS 35 Gate−to−Drain Charge QGD Plateau Voltage VGP 5 td(ON) 34 VGS = 10 V, VDS = 50 V; ID = 116 A 106 nC 22 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 50 V, ID = 116 A, RG = 6 W tf 24 ns 69 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 90 A TJ = 25°C 0.83 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb VGS = 0 V, dIS/dt = 100 A/ms, IS = 58 A 26 QRR 52 tRR 43 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 1000 A/ms, IS = 58 A QRR ns 28 Reverse Recovery Time ta V 54 Reverse Recovery Charge Charge Time 1.2 23 nC ns 19 385 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMTSC1D6N10MC TYPICAL CHARACTERISTICS 250 5.5 V VGS = 10 to 6 V 150 5.0 V 100 50 0 2 1 3 4 5 0 1 2 3 TJ = −55°C 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 40 30 20 10 TJ = 25°C 3 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 4 7 6 8 9 10 10 4 TJ = 25°C 3 VGS = 6 V 2 VGS = 10 V 1 0 10 60 210 160 110 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current 2.4 2.2 ID = 90 A VGS = 10 V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −50 −25 0 25 50 75 100 125 150 175 IDSS, REVERSE LEAKAGE CURRENT (nA) RDS(on), ON−RESISTANCE (mW) 50 0 ID = 90 A 0 TJ = 25°C 100 4.0 V 50 RDS(on), NORMALIZED DRAIN−SOURCE ON−RESISTANCE 150 4.5 V 0 VDS = 5 V 200 ID, DRAIN CURRENT (A) 200 RDS(on), DRAIN−SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 250 100K TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 100 10 TJ = 25°C 1 0.1 0.01 0.001 5 15 25 35 45 55 65 75 85 95 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMTSC1D6N10MC 100K CISS 10K C, CAPACITANCE (pF) COSS 1K CRSS 100 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 0 10 20 30 50 40 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDS = 50 V ID = 116 A TJ = 25°C 2 0 25 0 50 100 75 125 Figure 8. Gate−to−Source Voltage vs. Total Charge 250 td(off) td(on) tf 10 QGD 4 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) QGS 6 Figure 7. Capacitance Variation 100 tr TJ = 175°C TJ = 150°C TJ = 125°C TJ = 25°C TJ = −55°C 25 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 50 V ID = 116 A 100 10 ms 10 TC = 25°C Single Pulse VGS ≤ 10 V 1 0.1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 12 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.5 ms 1 ms 10 ms 100 1000 TJ(initial) = 25°C 100 10 1 TJ(initial) = 100°C 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMTSC1D6N10MC TYPICAL CHARACTERISTICS 1 ZqJA (°C/W) 50% Duty Cycle 0.1 20% 10% 5% 2% 0.01 1% 0.001 Single Pulse 0.000001 0.00001 0.0001 0.01 0.001 0.1 1 t, PULSE TIME (sec) Figure 13. Junction−to−Ambient Transient Thermal Response DEVICE ORDERING INFORMATION Device NTMTSC1D6N10MCTXG Marking Package Shipping† 1D6N10M POWER 88 Dual Cool (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMTSC1D6N10MC PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2P CASE 507AS ISSUE A www.onsemi.com 6 NTMTSC1D6N10MC onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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