NTMYS021N06CLTWG

NTMYS021N06CL Power MOSFET 60 V, 21 mW, 27 A, Single N−Channel Features • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 27 A Continuous Drain Current RqJC (Notes 1, 2, 3) Steady State Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1 & 2) TA = 25°C PD ID W 28 PD W 3.8 131 A −55 to + 175 °C IS 23.5 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.1 A) EAS 43 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C D 021N06 CL AWLYW LFPAK4 CASE 760AB 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM 1.9 IDM Source Current (Body Diode) S (1,2,3) N−CHANNEL MOSFET TJ, Tstg TA = 25°C, tp = 10 ms G (4) A 9.8 6.9 TA = 100°C Operating Junction and Storage Temperature D (5) 9.0 TA = 100°C TA = 25°C 27 A 31.5 mW @ 4.5 V 15 TC = 100°C Steady State Pulsed Drain Current TC = 25°C ID MAX 21 mW @ 10 V 60 V Symbol RDS(ON) MAX Symbol Value Unit Junction−to−Case − Steady State RqJC 5.3 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 021N06CL A WL Y W S S S G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 April, 2019 − Rev. 0 1 Publication Order Number: NTMYS021N06CL/D NTMYS021N06CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 28 VGS = 0 V, VDS = 60 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 16 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.0 VGS = 10 V ID = 10 A 18 21 VGS = 4.5 V ID = 10 A 26 31.5 gFS VDS =15 V, ID = 10 A V mV/°C 37 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 410 VGS = 0 V, f = 1 MHz, VDS = 25 V 210 pF 7.0 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 10 A 2.5 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 10 A 5.0 nC Threshold Gate Charge QG(TH) 0.6 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 2.7 td(ON) 4.0 VGS = 10 V, VDS = 48 V; ID = 10 A 1.0 nC 0.5 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 48 V, ID = 10 A, RG = 2.5 W tf 12 ns 12 1.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.9 TJ = 125°C 0.8 tRR ta tb 1.2 V 18 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 9.0 ns 9.0 7.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMYS021N06CL TYPICAL CHARACTERISTICS 10 V to 4.5 V 25 3.4 V VDS = 3 V 3.2 V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 3.0 V 15 2.8 V 10 2.6 V 5 2.4 V 20 15 10 TJ = 25°C 5 VGS = 2.2 V 0 0.5 1.0 1.5 2.0 0 2.5 0 1.5 2.0 2.5 3.5 3.0 Figure 2. Transfer Characteristics TJ = 25°C ID = 10 A 30 25 20 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 50 45 TJ = 25°C 40 35 VGS = 4.5 V 30 25 VGS = 10 V 20 15 10 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.5 100,000 TJ = 175°C VGS = 10 V ID = 10 A 10,000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics 45 2.0 0.5 TJ = 125°C VGS, GATE−TO−SOURCE VOLTAGE (V) 50 15 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 1.5 1.0 TJ = 150°C 1000 TJ = 125°C 100 TJ = 85°C 10 0.5 −50 −25 0 25 50 75 100 125 150 175 1 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTMYS021N06CL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 C, CAPACITANCE (pF) CISS COSS 100 10 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 10 20 30 40 50 60 6 5 4 QGS 3 QGD VDS = 48 V TJ = 25°C ID = 10 A 2 1 0 0 1 2 3 5 4 Figure 8. Gate−to−Source vs. Total Charge 10 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) 7 Figure 7. Capacitance Variation 10 td(on) 1 VGS = 10 V VDS = 48 V ID = 10 A 1 10 1 0.1 100 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 TC = 25°C Single Pulse VGS ≤ 10 V 100 IPEAK, DRAIN CURRENT(A) 1000 ID, DRAIN CURRENT(A) 8 QG, TOTAL GATE CHARGE (nC) tf td(off) tr 1 ms 500 ms 10 ms 10 1 0.1 QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 0.1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 TJ(initial) = 25°C 0.1 100 TJ(initial) = 100°C 1 1E−05 1E−04 1E−03 1E−02 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMYS021N06CL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 0.0000001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMYS021N06CLTWG Marking Package Shipping† 021N06CL LFPAK4 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK4 5x6 CASE 760AB ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: 98AON82777G LFPAK4 5x6 XXXXXX A WL Y W DATE 19 NOV 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative