NTMYS3D5N04CTWG

NTMYS3D5N04C MOSFET – Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features • • • • • www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 40 V 3.3 mW @ 10 V 102 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 102 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State PD ID N−CHANNEL MOSFET A 24 PD W 3.6 1.8 IDM 554 A TJ, Tstg −55 to +175 °C IS 65 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7.0 A) EAS 215 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) MARKING DIAGRAM 17 TA = 100°C TA = 25°C, tp = 10 ms S (1,2,3) W 68 34 TA = 100°C TA = 25°C G (4) 72 TC = 100°C TA = 25°C D (5) LFPAK4 CASE 760AB 3D5N04C A WL Y W 3D5N04 C AWLYW = Specific Device Code = Assembly Location =Wafer Lot = Year = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 2.2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 June, 2019 − Rev. 0 1 Publication Order Number: NTMYS3D5N04C/D NTMYS3D5N04C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 22 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 60 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.5 3.5 −7.8 VGS = 10 V gFS ID = 50 A 2.7 V mV/°C 3.3 mW VDS =15 V, ID = 50 A 93 S VGS = 0 V, f = 1 MHz, VDS = 25 V 1600 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 830 Reverse Transfer Capacitance CRSS 28 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 23 Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 20 V; ID = 50 A 5.1 Gate−to−Source Charge QGS 9.0 Gate−to−Drain Charge QGD 3.5 Plateau Voltage VGP 5.3 V 10 ns SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W 47 td(OFF) 19 tf 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 50 A TJ = 25°C 0.9 TJ = 125°C 0.78 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A 37 Charge Time ta Discharge Time tb 19 QRR 23 Reverse Recovery Charge 1.2 V ns 18 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMYS3D5N04C TYPICAL CHARACTERISTICS 100 100 80 70 60 4.8 V 50 40 30 4.4 V 20 10 80 70 60 50 40 30 TJ = 25°C 20 10 4.0 V 0.5 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 3.0 1.0 1.5 2.0 2.5 0 3.0 TJ = 125°C 0 4 6 5 Figure 2. Transfer Characteristics 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 7 TJ = 25°C 3.8 3.6 3.4 3.2 3.0 2.8 2.6 VGS = 10 V 2.4 2.2 2.0 0 10 20 30 40 60 50 70 80 90 100 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3 Figure 1. On−Region Characteristics 4.0 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 2.0 1 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) VDS = 10 V 90 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 5.2 V 10 V to 6.0 V 90 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−04 VGS = 10 V ID = 50 A IDSS, LEAKAGE (A) 1.6 1.4 1.2 1.0 TJ = 150°C 1.E−05 TJ = 125°C 1.E−06 TJ = 85°C 1.E−07 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1.E−08 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMYS3D5N04C TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) CISS 1000 COSS CRSS 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 10 15 20 25 30 8 7 QGD QGS 6 5 4 3 VDS = 20 V ID = 50 A TJ = 25°C 2 1 0 5 0 15 10 20 25 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 tr VGS = 0 V tf td(on) 10 VGS = 10 V VDD = 20 V ID = 50 A 1 10 10 1.0 0.3 100 TJ = 150°C 0.4 TJ = 125°C 0.5 0.6 TJ = 25°C TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 100 IPEAK, (A) ID, DRAIN CURRENT (A) QT 9 QG, TOTAL GATE CHARGE (nC) td(off) t, TIME (ns) 40 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1.0 35 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 10000 10 1 TC = 25°C VGS ≤ 10 V Single Pulse 0.1 0.1 1 TJ = 100°C 0.5 ms 1 ms 10 ms RDS(on) Limit Thermal Limit Package Limit 10 TJ = 25°C 10 1 1E−4 100 1E−3 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E−2 NTMYS3D5N04C TYPICAL CHARACTERISTICS 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMYS3D5N04CTWG Marking Package Shipping† 3D5N04C LFPAK4 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK4 5x6 CASE 760AB ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: 98AON82777G LFPAK4 5x6 XXXXXX A WL Y W DATE 19 NOV 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. 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