NTNS0K8N021ZTCG

MOSFET - Power, Single N-Channel, Small Signal 20 V, 220 mA NTNS0K8N021Z Features www.onsemi.com • Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm) for Extremely Space−Constrained Applications • 1.5 V Gate Drive • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX 1.5 W @ 4.5 V Compliant 8.0 W @ 1.2 V • Small Signal Load Switch • High Speed Interfacing • Level Shift N−CHANNEL MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID 220 mA Parameter Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 158 t≤5s TA = 25°C 253 Steady State TA = 25°C PD t≤5s Pulsed Drain Current 220 mA 3.3 W @ 1.8 V 20 V Applications ID Max tp = 10 ms Operating Junction and Storage Temperature Range G (1) mW 125 S (2) 166 IDM 846 mA TJ, TSTG −55 to 150 °C MARKING DIAGRAM EM Source Current (Body Diode) (Note 2) IS 200 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% XDFN3 CASE 711BH E M 1 = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTNS0K8N021ZTCG XDFN3 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2019 January, 2021 − Rev. 1 1 Publication Order Number: NTNS0K8N021Z/D NTNS0K8N021Z THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 998 Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 751 Unit °C/W 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 5 V TJ = 25°C 50 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V TJ = 25°C 100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±100 nA VGS(TH) VGS = VDS, ID = 250 mA 1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain−to−Source On Resistance RDS(on) 0.4 VGS = 4.5 V, ID = 100 mA 0.8 1.5 VGS = 1.8 V, ID = 20 mA 1.4 3.0 VGS= 1.2 V, ID = 10 mA 3.2 8.0 Forward Transconductance gFS VDS = 5 V, ID = 125 mA 0.48 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 10 mA 0.6 W S 1.0 V CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 12.3 VGS = 0 V, freq = 1 MHz, VDS = 15 V 3.4 pF 2.5 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 16.5 VGS = 4.5 V, VDD = 15 V, ID = 200 mA, RG = 2 W tf 25.5 142 80 4. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 ns NTNS0K8N021Z TYPICAL CHARACTERISTICS 0.4 5 V to 1.8 V VDS = 5 V VGS = 1.6 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.4 0.3 1.4 V 0.2 1.2 V 0.1 0.0 0.3 0.2 TJ = 25°C TJ = 25°C 0.0 1.0 2.0 3.0 4.0 0.0 5.0 5.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 2.0 1.0 1.0 2.0 3.0 4.0 1.6 4.0 VGS = 1.8 V 3.0 VGS = −3.3 V 2.0 VGS = 2.5 V 1.0 VGS = 4.5 V 0.1 0.3 0.2 0.4 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000.00 VGS = 4.5 V ID = 0.10 A TJ = 150°C 100.00 1.4 1.2 1.0 0.8 −50 −25 2 VGS = 1.5 V TJ = 25°C 0 5.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized) 1.2 Figure 2. Transfer Characteristics 3.0 0.6 0.8 Figure 1. On−Region Characteristics 4.0 1.6 0.4 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 0.22 A 1.8 0 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 0.0 TJ = −55°C 0.1 0 25 50 75 100 125 150 TJ = 125°C 10.00 TJ = 85°C 1.00 TJ = 25°C 0.10 0.01 VGS = 0 V 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTNS0K8N021Z TYPICAL CHARACTERISTICS VDS = 10 V ID = 0.2 A, VGS = 4.5 V TJ = 25°C VGS = 0 V f = 1 MHz td(off) 100 Ciss tf t, TIME (ns) C, CAPACITANCE (pF) 100 10 Coss tr Crss td(on) 10 1 0 5 10 15 20 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.20 1 ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) VGS = 0 V TJ = 25°C TJ = 125°C TJ = −55°C 0.02 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 ms 0.1 1 ms VGS < 4.5 V TA = 25°C Single Pulse Response 0.01 0.001 1.0 100 ms RDS(on) Limit Thermal Limit Package Limit 0.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 Figure 10. Maximum Rated Forward Biased Safe Operating Area Figure 9. Diode Forward Voltage vs. Current RqWJA(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 10 ms 1000 50% Duty Cycle 100 20% 10% 5% 2% 10 1% Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN3 0.42x0.62, 0.3P CASE 711BH ISSUE A DATE 29 APR 2018 SCALE 8:1 GENERIC MARKING DIAGRAM* XM X M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON64946G XDFN3 0.42x0.62, 0.3P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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