NTNS3190NZ
Small Signal MOSFET
20 V, 224 mA, Single N−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
•
•
•
•
•
Single N−Channel MOSFET
Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
Low RDS(on) Solution in 0.62 x 0.62 mm Package
1.5 V Gate Voltage Rating
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MOSFET
RDS(on) MAX
V(BR)DSS
1.4 W @ 4.5 V
1.9 W @ 2.5 V
20 V
224 mA
2.2 W @ 1.8 V
Applications
•
•
•
•
ID MAX
4.3 W @ 1.5 V
Small Signal Load Switch
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
N−Channel MOSFET
D (3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGS
±8.0
V
ID
224
mA
Continuous Drain
Current (Note 1)
Power Dissipation (Note 1)
Steady
State
TA = 25°C
TA = 85°C
162
t≤5s
TA = 25°C
241
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Pulsed Drain Current
PD
3
mW
120
XLLGA3
CASE 713AA
2
139
1
AM
1
673
mA
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode)
IS
120
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage
Temperature
S (2)
MARKING
DIAGRAM
IDM
tp = 10 ms
G (1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
1040
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RθJA
900
A = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTNS3190NZT5G
XLLGA3
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Publication Order Number:
NTNS3190NZ/D
NTNS3190NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
20
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 20 V
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = 250 mA
V
19
TJ = 25°C
mV/°C
1.0
mA
±2.0
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain-to-Source On Resistance
VGS(TH)/TJ
0.4
1.0
1.9
RDS(on)
VGS = 4.5 V, ID = 100 mA
0.65
1.4
VGS = 2.5 V, ID = 50 mA
0.9
1.9
VGS = 1.8 V, ID = 20 mA
1.1
2.2
4.3
VGS = 1.5 V, ID = 10 mA
1.4
Forward Transconductance
gFS
VDS = 5 V, ID = 100 mA
0.56
Source−Drain Diode Voltage
VSD
VGS = 0 V, IS = 10 mA
0.55
V
mV/°C
W
S
1.0
V
CHARGES & CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
15.8
VGS = 0 V, f = 1 MHz,
VDS = 15 V
3.5
2.4
0.70
VGS = 4.5 V, VDS = 15 V,
ID = 200 mA
pF
nC
0.05
0.14
0.10
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
18
VGS = 4.5 V, VDD = 15 V,
ID = 200 mA, RG = 2 W
tf
35
201
110
3. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTNS3190NZ
TYPICAL CHARACTERISTICS
3.0 V
0.9
3.5 V
0.8
2.0 V
4.0 V
0.7
1.8 V
4.5 V
0.6
0.5
1.5 V
0.4
0.3
1.2 V
0.2
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.0
VGS = 2.5 V
0
0.5
1.0
1.5
2.0
2.5
3.0
TJ = 125°C
0.6
0.5
0.4
0.3
0.2
0
0.5
1.0
1.5
2.0
2.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 0.1 A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE VOLTAGE (V)
3.0
5.0
4.5
TJ = 25°C
4.0
VGS = 1.5 V
3.5
3.0
2.5
VGS = 1.8 V
2.0
1.5
VGS = 2.5 V
1.0
0.5
0
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
RDS(on), NORMALIZED DRAIN−TO−SOURCE
RESISTANCE
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5
1.0
0.8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5.0
0.5
0
TJ = −55°C
VDS = 5 V
0.7
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.9
ID, DRAIN CURRENT (A)
1.0
1000
VGS = 4.5 V
ID = 100 mA
1.7
1.6
TJ = 125°C
1.4
IDSS, LEAKAGE (nA)
1.5
VGS = 1.8 V
ID = 20 mA
1.3
1.2
1.1
1.0
100
TJ = 85°C
10
0.9
0.8
0.7
−50
1
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTNS3190NZ
TYPICAL CHARACTERISTICS
25
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
f = 1 MHz
20
Ciss
15
10
Coss
5
0
Crss
0
2
4
6
8
10
12
14
16
18
20
5
12
3
9
2
QGS
QGD
6
VDS = 15 V
TJ = 25°C
ID = 0.2 A
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
3
0.7
0.8
0
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
IS, SOURCE CURRENT (A)
td(off)
t, TIME (ns)
VGS
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 4.5 V
VDD = 15 V
tf
100
tr
td(on)
1
10
TJ = 125°C
TJ = 25°C
1
TJ = −55°C
0.1
0.01
100
0.4 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0.85
1
10 ms
0.75
ID, DRAIN CURRENT (A)
VGS(th), GATE−TO−SOURCE THRESHOLD
VOLTAGE (V)
15
4
1000
10
18
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
ID = 250 mA
0.65
0.55
0.45
0.35
−50
−25
0
25
50
75
100
125
150
100 ms
0.1
1 ms
VGS ≤ 8 V
Single Pulse
TC = 25°C
10 ms
0.01
0.001
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
dc
10
TJ, TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Threshold Voltage
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTNS3190NZ
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
(°C/W)
TYPICAL CHARACTERISTICS
1200
1100
1000
RqJA Steady State = 1040°C/W
900
800
700
600
Duty Cycle = 0.5
500
400
300
200
100
0
0.05
0.02
0.01
0.20
0.10
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (s)
Figure 13. FET Thermal Response
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5
1E+00
1E+01
1E+02
1E+03
NTNS3190NZ
PACKAGE DIMENSIONS
XLLGA3, 0.62x0.62, 0.35P
CASE 713AA
ISSUE B
A B
D
ÉÉ
ÉÉ
PIN ONE
REFERENCE
E
0.10 C
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
A1
b
D
D2
D3
E
E2
e
K
L
L2
TOP VIEW
0.10 C
A
0.10 C
3X
A1
C
SIDE VIEW
SEATING
PLANE
MINIMUM RECOMMENDED
SOLDER FOOTPRINT*
D3
e/2
e
D2
2
2X
0.20
E2
3
0.10
M
b
C A B
0.05
M
C
1
1
L2
2X
K
2X
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.030
0.100 0.200
0.620 BSC
0.175 BSC
0.205 BSC
0.620 BSC
0.400 0.600
0.350 BSC
0.200 REF
0.090 0.210
0.110 0.310
0.10
M
C A B
0.05
M
C
2X
0.20
0.35
PITCH
L
BOTTOM VIEW
2
0.60
3
0.28
0.62
DIMENSIONS: MILLIMETERS
*Additional information concerning board mounting for this
package may be found in Document AND9099/D, “Board Level
Application Note for XLLGA 3-Lead 0.62x0.62 Package”.
For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTNS3190NZ/D