NTNS3190NZT5G

NTNS3190NZ Small Signal MOSFET 20 V, 224 mA, Single N−Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package Features • • • • • Single N−Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.5 V Gate Voltage Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MOSFET RDS(on) MAX V(BR)DSS 1.4 W @ 4.5 V 1.9 W @ 2.5 V 20 V 224 mA 2.2 W @ 1.8 V Applications • • • • ID MAX 4.3 W @ 1.5 V Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products N−Channel MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS ±8.0 V ID 224 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 162 t≤5s TA = 25°C 241 Steady State TA = 25°C t≤5s TA = 25°C Pulsed Drain Current PD 3 mW 120 XLLGA3 CASE 713AA 2 139 1 AM 1 673 mA TJ, TSTG -55 to 150 °C Source Current (Body Diode) IS 120 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature S (2) MARKING DIAGRAM IDM tp = 10 ms G (1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 1040 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 900 A = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3190NZT5G XLLGA3 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 0 1 Publication Order Number: NTNS3190NZ/D NTNS3190NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 20 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = 250 mA V 19 TJ = 25°C mV/°C 1.0 mA ±2.0 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ 0.4 1.0 1.9 RDS(on) VGS = 4.5 V, ID = 100 mA 0.65 1.4 VGS = 2.5 V, ID = 50 mA 0.9 1.9 VGS = 1.8 V, ID = 20 mA 1.1 2.2 4.3 VGS = 1.5 V, ID = 10 mA 1.4 Forward Transconductance gFS VDS = 5 V, ID = 100 mA 0.56 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 10 mA 0.55 V mV/°C W S 1.0 V CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 15.8 VGS = 0 V, f = 1 MHz, VDS = 15 V 3.5 2.4 0.70 VGS = 4.5 V, VDS = 15 V, ID = 200 mA pF nC 0.05 0.14 0.10 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 18 VGS = 4.5 V, VDD = 15 V, ID = 200 mA, RG = 2 W tf 35 201 110 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTNS3190NZ TYPICAL CHARACTERISTICS 3.0 V 0.9 3.5 V 0.8 2.0 V 4.0 V 0.7 1.8 V 4.5 V 0.6 0.5 1.5 V 0.4 0.3 1.2 V 0.2 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.0 VGS = 2.5 V 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = 125°C 0.6 0.5 0.4 0.3 0.2 0 0.5 1.0 1.5 2.0 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 0.1 A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE VOLTAGE (V) 3.0 5.0 4.5 TJ = 25°C 4.0 VGS = 1.5 V 3.5 3.0 2.5 VGS = 1.8 V 2.0 1.5 VGS = 2.5 V 1.0 0.5 0 VGS = 4.5 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) 4.5 1.0 0.8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 0.5 0 TJ = −55°C VDS = 5 V 0.7 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.9 ID, DRAIN CURRENT (A) 1.0 1000 VGS = 4.5 V ID = 100 mA 1.7 1.6 TJ = 125°C 1.4 IDSS, LEAKAGE (nA) 1.5 VGS = 1.8 V ID = 20 mA 1.3 1.2 1.1 1.0 100 TJ = 85°C 10 0.9 0.8 0.7 −50 1 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNS3190NZ TYPICAL CHARACTERISTICS 25 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C f = 1 MHz 20 Ciss 15 10 Coss 5 0 Crss 0 2 4 6 8 10 12 14 16 18 20 5 12 3 9 2 QGS QGD 6 VDS = 15 V TJ = 25°C ID = 0.2 A 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 3 0.7 0.8 0 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 IS, SOURCE CURRENT (A) td(off) t, TIME (ns) VGS VDS VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 4.5 V VDD = 15 V tf 100 tr td(on) 1 10 TJ = 125°C TJ = 25°C 1 TJ = −55°C 0.1 0.01 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.85 1 10 ms 0.75 ID, DRAIN CURRENT (A) VGS(th), GATE−TO−SOURCE THRESHOLD VOLTAGE (V) 15 4 1000 10 18 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 ID = 250 mA 0.65 0.55 0.45 0.35 −50 −25 0 25 50 75 100 125 150 100 ms 0.1 1 ms VGS ≤ 8 V Single Pulse TC = 25°C 10 ms 0.01 0.001 RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 TJ, TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTNS3190NZ R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL CHARACTERISTICS 1200 1100 1000 RqJA Steady State = 1040°C/W 900 800 700 600 Duty Cycle = 0.5 500 400 300 200 100 0 0.05 0.02 0.01 0.20 0.10 Single Pulse 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (s) Figure 13. FET Thermal Response http://onsemi.com 5 1E+00 1E+01 1E+02 1E+03 NTNS3190NZ PACKAGE DIMENSIONS XLLGA3, 0.62x0.62, 0.35P CASE 713AA ISSUE B A B D ÉÉ ÉÉ PIN ONE REFERENCE E 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A A1 b D D2 D3 E E2 e K L L2 TOP VIEW 0.10 C A 0.10 C 3X A1 C SIDE VIEW SEATING PLANE MINIMUM RECOMMENDED SOLDER FOOTPRINT* D3 e/2 e D2 2 2X 0.20 E2 3 0.10 M b C A B 0.05 M C 1 1 L2 2X K 2X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.100 0.200 0.620 BSC 0.175 BSC 0.205 BSC 0.620 BSC 0.400 0.600 0.350 BSC 0.200 REF 0.090 0.210 0.110 0.310 0.10 M C A B 0.05 M C 2X 0.20 0.35 PITCH L BOTTOM VIEW 2 0.60 3 0.28 0.62 DIMENSIONS: MILLIMETERS *Additional information concerning board mounting for this package may be found in Document AND9099/D, “Board Level Application Note for XLLGA 3-Lead 0.62x0.62 Package”. 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