NTNS3C94NZT5G

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTNS3C94NZ MOSFET – Single N-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 mm 12 V, 384 mA www.onsemi.com MOSFET Features • • • • • Single N−Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.8 V Gate Voltage Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant RDS(on) MAX V(BR)DSS ID MAX 0.48 W @ 4.5 V 0.54 W @ 3.7 V 12 V 0.60 W @ 3.3 V 384 mA 0.80 W @ 2.5 V 1.90 W @ 1.8 V Applications • • • • N−Channel MOSFET D (3) Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) G (1) Symbol Value Units Drain-to-Source Voltage VDSS 12 V Gate-to-Source Voltage VGS ±8 V ID 384 mA Parameter Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 277 t≤5s TA = 25°C 413 Steady State TA = 25°C t≤5s TA = 25°C Pulsed Drain Current PD mW 120 140 115 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS 157 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature MARKING DIAGRAM 3 IDM tp = 10 ms S (2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 1040 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 900 XLLGA3 CASE 713AE 2 1 EM 1 E = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3C94NZT5G XLLGA3 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. © Semiconductor Components Industries, LLC, 2016 June, 2019− Rev. 1 1 Publication Order Number: NTNS3C94NZ/D NTNS3C94NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 12 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 9.6 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA Negative Gate Threshold Temperature Coefficient VGS(TH)/TJ V 11 TJ = 25°C mV/°C 100 nA ±10 mA ON CHARACTERISTICS (Note 3) Drain-to-Source On Resistance 0.4 1.0 0.8 RDS(on) VGS = 4.5 V, ID = 100 mA 0.35 0.48 VGS = 3.7 V, ID = 75 mA 0.40 0.54 VGS = 3.3 V, ID = 75 mA 0.43 0.60 VGS = 2.5 V, ID = 50 mA 0.55 0.80 VGS = 1.8 V, ID = 20 mA 1.0 1.9 VGS = 1.5 V, ID = 10 mA 1.8 Forward Transconductance gFS VDS = 5 V, ID = 100 mA 0.6 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 100 mA 0.76 V mV/°C W S 1.0 V CHARGES & CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS 35 VGS = 0 V, f = 1 MHz, VDS =9. 6 V COSS CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 6.0 4.1 0.6 VGS = 4.5 V, VDS = 9.6 V, ID = 100 mA pF nC 0.1 0.1 0.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 7.0 VGS = 4.5 V, VDD = 9.6 V, ID = 100 mA, RG = 2 W tf ns 6.3 152 80 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTNS3C94NZ TYPICAL CHARACTERISTICS 0.36 0.32 VGS = 1.8 V 0.24 0.20 VGS = 1.5 V 0.16 0.12 0.08 VGS = 1.2 V 0.04 0.00 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.28 0.5 1.5 1.0 2.0 2.5 TJ = 125°C TJ = 25°C 0.30 0.25 0.20 0.15 0.10 0.05 0 3.0 0.5 0 1.0 1.5 2.0 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3000 2500 TJ = 25°C ID = 0.075 A 2000 1500 1000 500 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TJ = 25°C 2500 2000 VGS = 1.8 V 1500 1000 VGS = 2.5 V 500 VGS = 4.5 V 0 0.1 5.0 0.2 VGS, GATE VOLTAGE (V) 0.5 0.6 100 VGS = 10 V ID = 0.075 A IDSS, LEAKAGE (nA) 1.4 0.4 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.5 0.3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = −55°C VDS = 10 V 0.35 VGS = 2.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.40 VGS = 2.5 V to 4.5 V 1.3 1.2 1.1 1.0 0.9 0.8 10 TJ = 125°C 1 0.1 TJ = 85°C 0.7 0.6 −50 −25 0 25 50 75 100 125 150 0.01 5 6 7 8 9 10 11 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 12 NTNS3C94NZ TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 100 C, CAPACITANCE (pF) CISS COSS 10 CRSS 1 VGS = 0 V f = 1 MHz TJ = 25°C 0 2 6 4 8 10 12 3.5 3.0 2.5 2.0 QGS QGD 1.5 1.0 VDS = 9.6 V ID = 0.1 A TJ = 25°C 0.5 0 0 0.1 0.2 0.3 0.4 0.5 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0.6 1 VGS = 4.5 V VDS = 9.6 V ID = 0.1 A IS, SOURCE CURRENT (A) VGS = 0 V td(off) 100 tf 10 td(on) tr 1 10 TJ = 125°C 0.1 0.5 0.6 100 TJ = 25°C 0.7 TJ = −55°C 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ID, DRAIN CURRENT (A) t, TIME (ns) 4.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 4.5 0 V ≤ VGS ≤ 4.5 V Single Pulse TA = 25°C 1 TJ = 150°C 10 ms 100 ms 1 ms 0.1 10 ms 0.01 0.001 0.01 dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTNS3C94NZ TYPICAL CHARACTERISTICS R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) 10000 1000 Duty Cycle = 0.5 0.2 100 0.1 0.05 0.02 10 0.01 Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 12. FET Thermal Response www.onsemi.com 5 1 10 100 1000 NTNS3C94NZ PACKAGE DIMENSIONS XLLGA3, 0.62x0.62 CASE 713AE ISSUE O É É A B D PIN ONE REFERENCE 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. E DIM A A1 b b1 D D2 D3 E E2 e e1 L L2 TOP VIEW 0.10 C A 3X 0.10 C A1 C SIDE VIEW SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* D3 e1 D2 b1 2 2X E2 0.200 1 3 e 1 L2 b 2X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.100 0.200 0.150 0.250 0.620 BSC 0.175 BSC 0.205 BSC 0.620 BSC 0.400 0.600 0.200 BSC 0.175 BSC 0.090 0.210 0.110 0.310 L 0.10 M C A B 0.05 M C 2 0.250 BOTTOM VIEW 0.600 3 0.600 ALL 3 PADS 0.300 0.360 0.760 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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