NTNUS3171PZT5G

NTNUS3171PZ MOSFET – Single P-Channel, Small Signal, SOT-1123, 1.0 x 0.6 mm -20 V, -200 mA http://onsemi.com Features • Single P−Channel MOSFET • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package • 1.5 V Gate Voltage Rating • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely • V(BR)DSS RDS(ON) MAX 4.0 W @ −2.5 V −20 V 5.5 W @ −1.8 V MARKING DIAGRAM 3 • High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Equipment 2 1 SOT−1123 CASE 524AA 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C tv5s TA = 25°C Steady State TA = 85°C mA PD −600 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −200 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% © Semiconductor Components Industries, LLC, 2010 June, 2019 − Rev. 1 D 3 S 2 G mW IDM tp = 10 ms = Specific Device Code (Rotated 90° Clockwise) = Date Code P−Channel MOSFET 1 −200 Operating Junction and Storage Temperature 5M −200 tv5s Pulsed Drain Current −110 −125 TA = 25°C M −150 ID −0.20 A 7.0 W @ −1.5 V Thin Environments such as Portable Electronics. This is a Pb−Free Device Applications ID Max 3.5 W @ −4.5 V 1 ORDERING INFORMATION Device Package Shipping† NTNUS3171PZT5G SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTNUS3171PZ/D NTNUS3171PZ THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 1000 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 600 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V VGS = 0 V, VDS = −5.0 V TJ = 25°C −50 VGS = 0 V, VDS = −5.0 V TJ = 85°C −100 VGS = 0 V, VDS = −16 V TJ = 25°C −200 IGSS VDS = 0 V, VGS = ±5.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Drain−to−Source On Resistance RDS(ON) nA ±100 nA −0.7 −1.0 V VGS = −4.5 V, ID = −100 mA 2.0 3.5 VGS = −2.5 V, ID = −50 mA 2.6 4.0 VGS = −1.8 V, ID = −20 mA 3.4 5.5 VGS = −1.5 V, ID = −10 mA 4.0 7.0 ON CHARACTERISTICS (Note 4) −0.4 VGS = −1.2 V, ID = −1.0 mA 6.0 Forward Transconductance gFS VDS = −5.0 V, ID = −125 mA 0.26 Source−Drain Diode Voltage VSD VGS = 0 V, IS = −200 mA −0.5 W S −1.4 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 13 f = 1 MHz, VGS = 0 V VDS = −15 V 3.4 pF 1.6 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 30 VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W tf 56 196 145 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 ns NTNUS3171PZ TYPICAL CHARACTERISTICS 4.5 V 0.20 0.16 1.4 V 0.12 0.08 1.2 V 0.04 1.0 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.6 V 0 1 2 3 4 0.20 0.16 0.12 0.08 5 0.5 1.5 1 2.5 2 Figure 2. Transfer Characteristics TJ = 25°C 6.0 5.0 4.0 3.0 ID = 20 mA 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.5 3 TJ = 25°C 3 VGS = 2.5 V 2.5 VGS = 4.5 V 2 1.5 0.10 0.15 0.20 0.25 0.30 0.35 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 ID = 200 mA VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 TJ = −55°C Figure 1. On−Region Characteristics 7.0 1.50 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 200 mA 1.75 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8.0 1.0 0.24 0 9.0 2.0 0.28 0.04 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 0.24 VDS ≥ 5 V 0.32 1.8 V VGS = 2.2 thru 2.5 V 0.28 0.36 TJ = 25°C 2.0 V ID, DRAIN CURRENT (A) 0.36 0.32 VGS = 0 V 1000 1.25 1.00 TJ = 150°C 100 TJ = 125°C 0.75 0.50 −50 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNUS3171PZ TYPICAL CHARACTERISTICS 1000 18 TJ = 25°C VGS = 0 V 14 12 t, TIME (ns) Ciss 10 8 Coss 6 td(off) tf 100 tr td(on) 10 4 2 0 Crss 0 2 4 6 8 10 12 14 16 18 1 20 VDD = 15 V ID = 200 mA VGS = 4.5 V 1 10 100 DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance VGS = 0 V 0.12 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 16 TJ = 25°C 0.10 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−1123 CASE 524AA ISSUE C SCALE 8:1 DATE 29 NOV 2011 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− 1 3 2 E TOP VIEW A DIM A b b1 c D E e HE L L2 HE c SIDE VIEW 3X b L2 GENERIC MARKING DIAGRAM* 0.08 X Y e 2X 3X b1 XM L X M BOTTOM VIEW 1.20 0.34 0.26 1 0.38 = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 3X MILLIMETERS MIN MAX 0.34 0.40 0.15 0.28 0.10 0.20 0.07 0.17 0.75 0.85 0.55 0.65 0.35 0.40 0.95 1.05 0.185 REF 0.05 0.15 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 98AON23134D STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−1123, 3−LEAD, 1.0X0.6X0.37, 0.35P PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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