NTP067N65S3H

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Other names and brands may be claimed as the property of others. MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 67 mW, 40 A NTP067N65S3H www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. VDSS RDS(ON) MAX ID MAX 650 V 67 mW @ 10 V 40 A D Features • • • • • • Applications • • • • G 700 V @ TJ = 150°C Typ. RDS(on) = 55 mW Ultra Low Gate Charge (Typ. Qg = 80 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S G Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar D S TO−220−3LD CASE 340AT MARKING DIAGRAM T067N 65S3H AYWWZZ T067N65S3H A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 March, 2021 − Rev. 1 1 Publication Order Number: NTP067N65S3H/D NTP067N65S3H ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 40 A Continuous (TC = 100°C) 25 IDM Drain Current 112 A EAS Single Pulsed Avalanche Energy (Note 2) 422 mJ IAS Avalanche Current (Note 2) 6.5 A EAR Repetitive Avalanche Energy (Note 1) 2.66 mJ dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Pulsed (Note 1) Power Dissipation TJ, TSTG TL (TC = 25°C) 266 W Derate Above 25°C 2.13 W/°C −55 to +150 °C 260 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 6.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 20 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.47 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping NTP067N65S3H T067N65S3H TO−220−3LD (Pb-Free / Halogen Free) 50 Units / Tube www.onsemi.com 2 NTP067N65S3H ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.63 V/_C 2 mA ±100 nA 4.0 V 67 mW 1.6 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 20 A 55 Forward Transconductance VDS = 20 V, ID = 20 A 28 S VDS = 400 V, VGS = 0 V, f = 250 kHz 3750 pF 60 pF gFS VGS = VDS, ID = 3.9 mA 2.4 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 691 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 107 pF Qg(tot) Total Gate Charge at 10 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance 80 nC VDS = 400 V, ID = 20 A, VGS = 10 V (Note 4) 21 nC 20 nC f = 1 MHz 0.6 W 29 ns 8.5 ns 80 ns 2.6 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 20 A, VGS = 10 V, Rg = 4.7 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 40 A ISM Maximum Pulsed Source to Drain Diode Forward Current 112 A VSD Source to Drain Diode Forward Voltage 1.2 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 20 A VDD = 400 V, ISD = 20 A, dIF/dt = 100 A/ms 403 ns 7.4 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTP067N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ID, DRAIN CURRENT (A) 10 V 60 5.0 V 40 4.5 V 20 VGS = 4.0 V 5 0 0.15 10 TJ = −55°C TJ = 150°C 3 2 5 4 6 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1000 IS, REVERSE DRAIN CURRENT (A) VGS = 20 V 0.05 40 20 0 80 60 VGS = 0 V 250 ms Pulse Test 100 10 1 0.1 TJ = 150°C 0 TJ = 25°C 0.4 0.2 0.6 TJ = −55°C 0.8 1.0 1.2 ID, DRAIN CURRENT (A) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS = 0 V f = 250 KHz 104 Ciss 103 102 Coss 101 Crss 100 0 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 10 V 10−1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TC = 25°C 105 100 1 20 15 0.10 0 250 ms Pulse Test VDS = 20 V 6.0 V 5.5 V 106 CAPACITANCE (pF) 1000 7.0 V 80 0 RDS(on), DRAIN−SOURCE ON−RESISTANCE 250 ms Pulse Test TC = 25°C VGS, GATE−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 100 100 200 300 400 500 600 10 ID = 20 A VDD = 130 V 8 VDD = 400 V 6 4 2 0 0 10 20 30 40 50 60 70 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 80 NTP067N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 1.2 NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE 3.0 RDS(ON), NORMALIZED DRAIN− SOURCE ON−RESISTANCE VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 1.5 1.0 0.5 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 50 100 10 ms 10 100 ms Operation in this Area is Limited by RDS(on) 1 1 ms TC = 25°C TJ = 150°C Single Pulse 1 10 ms 30 20 10 DC 100 10 40 1000 0 25 75 100 125 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature EOSS (mJ) 10 5 0 50 VDS, DRAIN−SOURCE VOLTAGE (V) 15 0 0 TJ, JUNCTION TEMPERATURE (°C) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.0 0 −75 −50 −25 100 125 150 175 1000 0.1 VGS = 10 V ID = 20 A 2.5 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 NTP067N65S3H TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 Single Pulse t1 t2 0.01 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Impedance www.onsemi.com 6 ZqJC(t) = r(t) x RqJC RqJC = 0.47°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1/t2 0.1 1 NTP067N65S3H VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTP067N65S3H + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NTP067N65S3H PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A www.onsemi.com 9 NTP067N65S3H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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