NTP150N65S3HF

NTP150N65S3HF MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 24 A, 150 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 150 mW @ 10 V 24 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 121 mW Ultra Low Gate Charge (Typ. Qg = 43 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar S POWER MOSFET G D S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K NTP150 N65S3HF $Y &Z &3 &K NTP150N65S3HF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 June, 2019 − Rev. 0 1 Publication Order Number: NTP150N65S3HF/D NTP150N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 24 − Continuous (TC = 100°C) 15.2 IDM Drain Current 60 A EAS Single Pulsed Avalanche Energy (Note 2) 275 mJ IAS Avalanche Current (Note 2) 3.8 A EAR Repetitive Avalanche Energy (Note 1) 1.92 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 192 W − Derate Above 25°C 1.54 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 3.8 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 12 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.65 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTP150N65S3HF NTP150N65S3HF TO−220 Tube N/A N/A 50 Units www.onsemi.com 2 NTP150N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.62 V/_C 10 mA ±100 nA 5.0 V 150 mW 67 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.54 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A 121 Forward Transconductance VDS = 20 V, ID = 12 A 14 S 1985 pF 40 pF gFS 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 400 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 71 pF Total Gate Charge at 10 V VDS = 400 V, ID = 12 A, VGS = 10 V (Note 4) 43 nC 13 nC 17 nC f = 1 MHz 5.0 W VDD = 400 V, ID = 12 A, VGS = 10 V Rg = 4.7 W (Note 4) 21 ns 19 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 63 ns Turn-Off Fall Time 14 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 24 A ISM Maximum Pulsed Source to Drain Diode Forward Current 60 A VSD Source to Drain Diode Forward Voltage VDD = 400 V, ISD = 12 A 1.3 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 12 A, dIF/dt = 100 A/ms IS 88 ns 306 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTP150N65S3HF TYPICAL CHARACTERISTICS 250 ms Pulse Test TC = 25°C 8.0 V 60 VGS = 10 V VDS = 20 V 250 ms Pulse Test 7.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 6.5 V 10 6.0 V 5.5 V 1 10 TJ = 25°C TJ = 150°C 0.2 1 10 1 20 0.25 0.20 VGS = 10 V VGS = 20 V 0.15 14 28 42 VGS = 0 V 250 ms Pulse Test TJ = 150°C 1 TJ = 25°C 0.1 0.01 TJ = −55°C 0 0.5 1.0 1.5 2.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 VGS, GATE−SOURCE VOLTAGE (V) CAPACITANCE (pF) 9 ID, DRAIN CURRENT (A) 10K Ciss 1K 100 0.1 8 7 10 0.001 70 56 100K 1 6 Figure 2. Transfer Characteristics TC = 25°C 10 5 Figure 1. On−Region Characteristics 100 0 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.30 0.10 3 TJ = −55°C VDS, DRAIN−SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) 0.1 Coss VGS = 0 V f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 1K VDS = 130 V ID = 12 A VDS = 400 V 8 6 4 2 0 0 10 20 30 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 50 NTP150N65S3HF 1.2 3.0 VGS = 0 V ID = 15 mA RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 1.1 1.0 0.9 0.8 −50 0 50 100 ID = 12 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0 150 −50 0 50 150 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 100 24 100 ms ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 ms 10 1 ms Operation in this Area is Limited by RDS(on) 10 ms 1 DC TC = 25°C TJ = 150°C Single Pulse 0.1 1 10 100 18 12 6 0 1000 25 EOSS (mJ) 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 9 6 3 0 75 VDS, DRAIN−SOURCE VOLTAGE (V) 12 0 50 130 260 390 520 650 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NTP150N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 t1 0.01 Single Pulse 0.001 0.00001 0.0001 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.65°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.001 0.1 0.01 1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 100 1000 NTP150N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTP150N65S3HF + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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