NTP190N65S3HF

MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTP190N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 190 mW @ 10 V 20 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 159 mW Ultra Low Gate Charge (Typ. Qg = 34 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G Applications • • • • S POWER MOSFET Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter D S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K NTP190 N65S3HF $Y &Z &3 &K NTP190N65S3HF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 September, 2019 − Rev. 1 1 Publication Order Number: NTP190N65S3HF/D NTP190N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 20 − Continuous (TC = 100°C) 12.7 IDM Drain Current 50 A EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ IAS Avalanche Current (Note 2) 3.7 A EAR Repetitive Avalanche Energy (Note 1) 1.62 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 162 W − Derate Above 25°C 1.3 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 3.7 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.77 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTP190N65S3HF NTP190N65S3HF TO−220 Tube N/A N/A 50 Units www.onsemi.com 2 NTP190N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.65 V/_C 10 mA ±100 nA 5.0 V 190 mW 65 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A 159 Forward Transconductance VDS = 20 V, ID = 10 A 11 S 1610 pF 30 pF gFS VGS = VDS, ID = 0.43 mA 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 316 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 59 pF Qg(tot) Total Gate Charge at 10 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance 34 nC VDS = 400 V, ID = 10 A, VGS = 10 V (Note 4) 11 nC 13 nC f = 1 MHz 6.8 W 19 ns 19 ns 58 ns 14 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 4.7 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 20 A ISM Maximum Pulsed Source to Drain Diode Forward Current 50 A VSD Source to Drain Diode Forward Voltage 1.3 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A VDD = 400 V, ISD = 10 A, dIF/dt = 100 A/ms 80 ns 264 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTP190N65S3HF TYPICAL CHARACTERISTICS 8.0 V 50 VGS = 10 V ID, DRAIN CURRENT (A) 7.0 V 6.5 V 6.0 V 10 5.5 V 1 0.1 RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) 250 ms Pulse Test TC = 25°C 0.2 1 10 20 100 VGS = 10 V VGS = 20 V 0.2 0 15 30 45 4 5 6 8 7 9 VGS = 0 V 250 ms Pulse Test 10 1 TJ = 150°C TJ = 25°C 0.1 0.01 0.001 60 TJ = −55°C 0 0.5 1.0 1.5 2.0 ID, DRAIN CURRENT (A) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100K VGS, GATE−SOURCE VOLTAGE (V) 10 10K CAPACITANCE (pF) 3 Figure 2. Transfer Characteristics 0.3 Ciss 1K 100 0.1 TJ = −55°C Figure 1. On−Region Characteristics 0.4 1 TJ = 150°C VGS, GATE−TO−SOURCE VOLTAGE (V) TC = 25°C 10 TJ = 25°C VDS, DRAIN−SOURCE VOLTAGE (V) 0.5 0.1 VDS = 20 V 250 ms Pulse Test 10 1 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 Coss VGS = 0 V f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 1K VDD = 130 V ID = 10 A VDD = 400 V 8 6 4 2 0 0 8 16 24 32 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 40 NTP190N65S3HF 1.2 3.0 RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 −50 0 50 100 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 −50 Figure 8. On−Resistance Variation vs. Temperature 20 100 ms Operation in this Area is Limited by RDS(on) 1 ms 1 10 ms TC = 25°C TJ = 150°C Single Pulse 1 15 10 5 DC 10 100 0 1000 25 50 75 100 125 150 VDS, DRAIN−SOURCE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 8 EOSS (mJ) 150 100 Figure 7. Breakdown Voltage Variation vs. Temperature 30 ms 6 4 2 0 50 TJ, JUNCTION TEMPERATURE (°C) 10 0 0 TJ, JUNCTION TEMPERATURE (°C) 100 0.1 ID = 10 A VGS = 10 V 2.5 0 150 ID, DRAIN CURRENT (A) BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 130 260 390 520 650 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NTP190N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 0.01 0.001 Single Pulse 0.00001 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.77°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 10 100 NTP190N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTP190N65S3HF + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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