NTP4813NL
Power MOSFET
30 V, 51 A, Single N−Channel, TO−220AB
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
Applications
ID MAX
13.1 mW @ 10 V
30 V
• Power Motor Control
• High Current, High Side Switching
• DC−DC Converters
RDS(ON) MAX
51 A
22 mW @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
12.8
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
3.75
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
10.2
A
Power Dissipation
RqJA (Note 2)
TA = 85°C
Steady
State
TA = 85°C
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
51
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
60
W
TA = 25°C
IDM
154
A
TA = 25°C
IDmaxPkg
95
A
TJ,
TSTG
−55 to
+175
°C
TC = 85°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
4
Drain
4
2.40
Current Limited by Package
MARKING DIAGRAM
& PIN ASSIGNMENT
7.9
PD
tp=10ms
S
N−CHANNEL MOSFET
9.9
TA = 25°C
Pulsed Drain
Current
G
TO−220AB
CASE 221A
STYLE 5
39.5
IS
50
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 18 Apk, L = 0.3 mH, RG = 25 W)
EAS
48.6
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
1
2
NTP4813NLG
AYWW
1
Gate
3
A
Y
WW
G
3
Source
2
Drain
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number:
NTP4813NL/D
NTP4813NL
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.5
Junction−to−Ambient – Steady State (Note 1)
RqJA
40
Junction−to−Ambient – Steady State (Note 2)
RqJA
62.5
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
24.5
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
1.5
5.5
mV/°C
VGS = 10 V
ID = 20 A
10.5
13.1
VGS = 4.5 V
ID = 20 A
17.6
22
mW
Forward Transconductance
gFS
VDS = 15 V, ID = 10 A
6.7
S
Gate Resistance
RG
TA = 25°C
0.80
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
120
Total Gate Charge
QG(TOT)
7.7
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
895
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QGD
QG(TOT)
220
1.6
3.4
pF
10.8
nC
3.6
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
17
td(ON)
10
tr
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
21.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(OFF)
12
tf
3.2
td(ON)
6.3
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
13.4
17.6
1.6
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
ns
NTP4813NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
TJ = 25°C
0.95
1.2
TJ = 125°C
0.85
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 30 A
tRR
ta
tb
V
14.8
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
8.3
6.5
5.3
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NTP4813NL
TYPICAL PERFORMANCE CURVES
ID, DRAIN CURRENT (A)
50
60
TJ = 25°C
4.5 V
40
4V
30
3.8 V
20
3.6 V
10
VDS ≥ 10 V
50
40
30
20
TJ = 125°C
TJ = 25°C
10
3V
0
1
2
5
4
3
0
TJ = −55°C
1
2
3
4
6
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 V
6V
5V
ID, DRAIN CURRENT (A)
60
0.030
ID = 20 A
TJ = 25°C
0.03
TJ = 25°C
0.0275
0.025
0.025
0.02
VGS = 4.5 V
0.0175
0.020
0.015
0.0125
0.015
7
VGS = 10 V
0.01
0.0075
0.010
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.005
10
25
30
35
40
45
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100,000
VGS = 0 V
TJ = 150°C
10,000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
20
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
1.7 ID = 20 A
1.6 VGS = 10 V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50 −25
0
15
TJ = 125°C
1000
100
TJ = 25°C
25
50
75
100
125
150
175
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
30
NTP4813NL
1000
TJ = 25°C
900
Ciss
C, CAPACITANCE (pF)
800
700
600
500
400
300
Coss
200
100
0
Crss
5
0
10
15
20
25
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
15
13.5
12
QT
10.5
9
7.5
6
Q2
Q1
4.5
ID = 30 A
VDD = 15 V
VGS = 11.5 V
TJ = 25°C
3
1.5
0
0
1
2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
4 5 6 7 8 9 10 11 12 13 14 15 16
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
100
30
VGS = 0 V
IS, SOURCE CURRENT (A)
t, TIME (ns)
tr
td(off)
10
td(on)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
tf
1
1
10
RG, GATE RESISTANCE (W)
25
20
15
10
5
0
0.5
100
100 ms
10
1
0.1
1 ms
10 ms
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.7
0.8
1.0
0.9
Figure 10. Diode Forward Voltage vs. Current
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
TJ = 25°C
50
ID = 18 A
45
40
35
30
25
20
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTP4813NL
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
125°C
10
100°C
25°C
1
0.1
1
10
100
PULSE WIDTH (ms)
1000
Figure 13. Avalanche Characteristics
ORDERING INFORMATION
Device
NTP4813NLT4G
Package
Shipping†
TO−220AB
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTP4813NL
PACKAGE DIMENSIONS
TO−220, SINGLE GAUGE
CASE 221AB
ISSUE A
−T−
B
F
T
SEATING
PLANE
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
4. PRODUCT SHIPPED PRIOR TO 2008 HAD DIMENSIONS
S = 0.045 - 0.055 INCHES (1.143 - 1.397 MM)
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.020
0.024
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
0.508
0.61
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NTD4813N/D
