NTP5426N

NTB5426N, NTP5426N Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 Features • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices Power Supplies Converters Power Motor Controls Bridge Circuits Parameter Symbol VDSS VGS VGS ID Value 60 $20 30 120 85 PD IDM TJ, Tstg IS EAS 215 260 −55 to +175 60 735 W A °C A mJ Unit V V V A http://onsemi.com ID MAX (Note 1) 120 A V(BR)DSS 60 V RDS(ON) MAX 6.0 mW @ 10 V Applications N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) G S 4 4 1 TO−220AB CASE 221A STYLE 5 2 3 1 D2PAK CASE 418B STYLE 2 Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds 2 3 4 Drain MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain TL 260 °C 5426N AYWW 5426N AYWW 3 Source 2 Drain G A Y WW = Pb−Free Device = Assembly Location = Year = Work Week 2 Drain THERMAL RESISTANCE RATINGS Parameter Junction−to−Case (Drain) Steady State (Note 1) Symbol RqJC Max 0.7 Unit °C/W 1 Gate 1 Gate 3 Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 0 1 Publication Order Number: NTB5426N/D NTB5426N, NTP5426N ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ VDS(on) RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V IS = 60 A TJ = 25°C TJ = 100°C VGS = 10 V, VDD = 48 V, ID = 60 A, RG = 3.0 W VGS = 10 V, VDS = 48 V, ID = 60 A VGS = 10 V, ID = 60 A VGS = 10 V, ID = 60 A, 150°C Static Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge VDS = 25 V, VGS = 0 V, f = 1 MHz 5800 1000 370 150 6.0 28 67 170 nC pF VGS = 10 V, ID = 60 A VDS = 15 V, ID = 20 A VGS = 0 V VDS = 60 V TJ = 25°C TJ = 150°C VDS = 0 V, ID = 250 mA 60 64 1.0 25 $100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Voltage VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 3.1 9.2 0.3 0.6 4.9 65 4.0 V mV/°C 0.36 V 6.0 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.88 0.78 75 50 25 235 mC ns 1.1 Vdc 15 100 105 95 ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Stored Charge IS = 60 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTP5426N NTB5426NT4G Package TO−220AB (Pb−Free) D2PAK (Pb−Free) Shipping† 50 Units / Rail 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTB5426N, NTP5426N TYPICAL CHARACTERISTICS 240 200 160 120 80 40 0 0 1 2 3 10 V 6.6 V 6.4 V TJ = 25°C 6.0 V 5.8 V 5.4 V 5.0 V VGS = 4.6 V 4 5 6.2 V ID, DRAIN CURRENT (A) 240 VDS ≥ 10 V 200 160 120 80 TJ = 25°C 40 0 TJ = −55°C 3 4 5 6 7 ID, DRAIN CURRENT (A) TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 5 6 7 8 9 10 ID = 60 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.006 Figure 2. Transfer Characteristics TJ = 25°C VGS = 10 V 0.005 0.004 10 30 50 70 90 110 130 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 2.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = 60 A VGS = 10 V IDSS, LEAKAGE (nA) 2.0 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 1.5 1000 TJ = 125°C 1.0 0.5 −50 −25 0 25 50 75 100 125 150 175 100 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTB5426N, NTP5426N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 12,000 10,000 C, CAPACITANCE (pF) Ciss 8000 6000 Coss 4000 2000 0 Crss 0 10 20 30 40 50 60 VGS = 0 V TJ = 25°C 10 8.0 6.0 4.0 2.0 0 TJ = 25°C ID = 60 A VDS = 48 V 0 25 50 75 100 125 150 Q1 Q2 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 VDD = 48 V ID = 60 A VGS = 10 V t, TIME (ns) 100 Figure 8. Gate−to−Source Voltage vs. Total Charge tf IS, SOURCE CURRENT (A) 120 100 80 60 40 20 0 0.5 0.6 0.7 0.8 0.9 1.0 VGS = 0 V TJ = 25°C td(off) tr td(on) 10 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 800 100 ms 1 ms dc 10 10 ms 10 ms AVALANCHE ENERGY (mJ) 600 Figure 10. Diode Forward Voltage vs. Current ID, DRAIN CURRENT (A) 100 VGS = 10 V Single Pulse TC = 25°C ID = 70 A 400 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 200 0 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTB5426N, NTP5426N TYPICAL CHARACTERISTICS 100 D = 0.5 10 0.2 0.1 R(t) (°C/W) 1 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 Surface Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.1 1 10 100 1000 0.05 0.02 0.01 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 NTB5426N, NTP5426N PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C E −B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN M F VIEW W−W 1 F VIEW W−W 2 F VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB5426N, NTP5426N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 B 4 F T A C S −T− SEATING PLANE Q 123 H Z L V G D N K U R J STYLE 5: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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