NTP5863NG

NTP5863N N-Channel Power MOSFET 60 V, 97 A, 7.8 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) VGS 30 V ID 97 A Continuous Drain Current Steady State Power Dissipation Steady State Pulsed Drain Current TC = 25°C tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH, IL(pk) = 56 A) Peak Diode Recovery (dV/dt) Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) V(BR)DSS RDS(on) MAX ID MAX 60 V 7.8 mW @ 10 V 97 A D G TC = 100°C TC = 25°C http://onsemi.com 68 PD 150 W IDM 383 A TJ, Tstg −55 to +175 °C IS 97 A EAS 157 mJ dV/dt 4.1 V/ns TL 260 °C S N−CHANNEL MOSFET 4 1 Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 1.0 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 36 3 MARKING DIAGRAMS & PIN ASSIGNMENTS THERMAL RESISTANCE RATINGS Parameter 2 TO−220AB CASE 221A STYLE 5 4 Drain NTP 5863NG AYWW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 1 Gate 3 Source 2 Drain G A Y WW = Pb−Free Device = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 2 1 Publication Order Number: NTP5863N/D NTP5863N ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−Body Leakage Current IDSS 47 ID = 250 mA, ref to 25°C VGS = 0 V VDS = 60 V V mV/°C TJ = 25°C 1.0 TJ = 125°C 50 IGSS VDS = 0 V, VGS = $20 V VGS(th) VGS = VDS, ID = 250 mA $100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(th)/TJ 2.0 4.0 9.1 V mV/°C RDS(on) VGS = 10 V, ID = 20 A 6.5 gFS VDS = 15 V, ID = 30 A 12 S 3200 pF Forward Transconductance 7.8 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz Coss 350 Crss 230 Total Gate Charge QG(TOT) 55 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 19 RG 0.4 W 10 ns Gate Resistance VGS = 10 V, VDS = 48 V, ID = 48 A nC 3.4 14.5 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 10 V, VDD = 48 V, ID = 48 A, RG = 2.5 W tf 34 25 9.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Stored Charge VGS = 0 V IS = 48 A TJ = 25°C 0.96 TJ = 150°C 0.85 32 VGS = 0 Vdc, IS = 48 Adc, dIS/dt = 100 A/ms QRR http://onsemi.com 2 Vdc ns 20 12 28 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.5 nC NTP5863N TYPICAL PERFORMANCE CHARACTERISTICS 10 V 7.5 V VGS = 6.5 V 150 5.5 V 125 100 5.0 V 75 50 4.5 V 25 0 1 2 3 4 125 100 75 TJ = 125°C 2 3 TJ = −55°C 4 6 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 20 A TJ = 25°C 0.025 0.020 0.015 0.010 0.005 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 TJ = 25°C 0.0075 0.0070 VGS = 10 V 0.0065 0.0060 10 1.4 1.2 1.0 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) 100,000 ID = 20 A VGS = 10 V 1.6 20 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.2 1.8 7 0.0080 Figure 3. On−Resistance vs. Gate Voltage 2.0 TJ = 25°C 50 0 5 0.030 0.000 150 25 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS ≥ 10 V 175 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 175 200 TJ = 25°C 7.0 V ID, DRAIN CURRENT (A) 200 VGS = 0 V TJ = 150°C 10,000 TJ = 25°C 1000 0.8 0.6 −50 −25 0 25 50 75 100 125 150 100 10 175 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTP5863N TYPICAL PERFORMANCE CHARACTERISTICS C, CAPACITANCE (pF) 3500 VGS = 0 V TJ = 25°C 3000 2500 2000 1500 1000 Coss 500 0 Crss 0 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 Ciss VDS 6 30 2 0 ID = 48 A TJ = 25°C 0 10 30 50 40 0 60 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge tr td(off) td(on) tf 10 1 10 VGS = 0 V TJ = 25°C 80 60 40 20 0 0.0 100 0.2 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ms 1 ms 10 ms dc EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 10 ms 10 0.1 0.1 20 15 Qg, TOTAL GATE CHARGE (nC) 100 1 45 Qgd 4 IS, SOURCE CURRENT (A) t, TIME (ns) Qgs 100 100 VGS VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDD = 48 V ID = 48 A VGS = 10 V ID, DRAIN CURRENT (A) 60 8 1000 1 75 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4000 VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 10 100 160 140 ID = 56 A 120 100 80 60 40 20 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTP5863N r(t), Effective Transient Thermal Resistance (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS 10 1 D = 0.5 0.2 0.1 0.1 0.05 0.01 0.001 0.000001 0.02 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (s) Figure 13. Thermal Response ORDERING INFORMATION Device NTP5863NG Package Shipping† TO−220AB (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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