NTP5864N
MOSFET – Power
60 V, 63 A, 12.4 mW
Features
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
(Note 1)
60 V
12.4 mΩ @ 10 V
63 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage −
Non−Repetitive (tp = 10 s)
VGS
±30
V
ID
63
A
PD
107
IDM
252
A
TJ,
TSTG
−55 to
175
°C
IS
63
A
EAS
80
mJ
IAS
40
A
TL
260
°C
Continuous Drain
Current − RJC (Note 1)
Power Dissipation −
RJC (Note 1)
Steady
State
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
G
S
W
54
MARKING DIAGRAM
& PIN ASSIGNMENT
THERMAL RESISTANCE RATINGS
Symbol
Max
Units
Junction−to−Case (Drain) − Steady State
(Note 1)
RθJC
1.4
°C/W
Junction−to−Ambient − Steady State (Note 1)
RθJA
33
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
TO−220AB
CASE 221A
STYLE 5
1
2
3
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
Source
2
Drain
ORDERING INFORMATION
NTP5864NG
June, 2019 − Rev. 1
NTP5864NG
AYWW
1
Gate
Device
© Semiconductor Components Industries, LLC, 2015
4
Drain
4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
D
45
TC = 100°C
tp = 10 s
N−Channel
1
Package
Shipping
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NTP5864N/D
NTP5864N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
58
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 A
mV/°C
1.0
A
±100
nA
4.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
2.0
−10
mV/°C
RDS(on)
VGS = 10 V, ID = 20 A
10.2
12.4
gFS
VDS = 15 V, ID = 20 A
10
S
1680
pF
m
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
189
124
nC
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
10
Rg
0.5
10
ns
Gate Resistance
31
VGS = 10 V, VDS = 48 V,
ID = 20 A
2.0
7.3
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 10 V, VDD = 48 V,
ID = 20 A, RG = 2.5
tf
6.4
18
4.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.94
TJ = 125°C
0.84
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
24
VGS = 0 V, dISD/dt = 100 A/s,
IS = 20 A
QRR
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2
V
ns
16
7.9
20
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTP5864N
TYPICAL CHARACTERISTICS
125
VGS = 10 V
7.5 V
TJ = 25°C
VDS ≥ 10 V
7V
100
6.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
125
5.5 V
75
5.0 V
50
4.5 V
25
100
75
50
TJ = 25°C
25
TJ = 125°C
0
1
2
3
4
0
5
2
4
3
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
ID = 20 A
TJ = 25°C
0.025
0.020
0.015
7
0.0115
VGS = 10 V
TJ = 25°C
0.0110
0.0105
0.010
0.0100
0.005
0.000
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.0095
10
20
25
30
35
40
45
50
55
60
Figure 4. On−Resistance vs. Drain Current
100000
2.2
2.0
15
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
ID = 20 A
VGS = 10 V
VGS = 0 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
10000
1.6
1.4
1.2
1.0
TJ = 150°C
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTP5864N
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25°C
2000
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
2500
Ciss
1500
1000
500
Coss
0
0
Crss
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
QT
8
6
Qgs
4
2
0
ID = 20 A
TJ = 25°C
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
VDD = 48 V
ID = 20 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
td(on)
10
VGS = 0 V
TJ = 25°C
90
100
t, TIME (ns)
Qgd
tr
tf
80
70
60
50
40
30
20
10
1
1
10
100
0.60
0.70
0.80
0.90
1.00
1.10 1.20
RG, GATE RESISTANCE ()
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
80
100 s
1 ms
10 ms
dc
100
10 s
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.50
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
0.1
0
0.40
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 40 A
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP5864N
TYPICAL CHARACTERISTICS
RJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.1
1
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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