NTP5D0N15MC

MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 5.0 mW, 139 A NTP5D0N15MC Features • • • • • • www.onsemi.com Shielded Gate MOSFET Technology Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 97 A 50% Lower Qrr than other MOSFET Suppliers Lowers Switching Noise/EMI 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 150 V 5.0 mW @ 10 V 139 A D Typical Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V ID 139 A Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Steady State Steady State MARKING DIAGRAM 4 4 Drain TC = 25°C PD 214 W ID 15 A TA = 25°C PD 2.4 W IDM 818 A TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (IL = 26 Apk, L = 3 mH) EAS 1014 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current N−CHANNEL MOSFET TA = 25°C, tp = 100 ms Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 1 AYWWZZ NTP 5D0N15MC TO−220 CASE 221A 2 1 Gate 3 3 Source 2 Drain NTP5D0N15MC = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device NTP5D0N15MC Package Shipping† TO−220 (Pb−Free) 800 / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2018 April, 2020 − Rev. 1 1 Publication Order Number: NTP5D0N15MC/D NTP5D0N15MC THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 0.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 62.5 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 150 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 120 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V V 76 TJ = 25°C mV/°C 1.0 ±100 mA nA ON CHARACTERISTICS VGS(TH) VGS = VDS, ID = 532 mA VGS(TH)/TJ ID = 532 mA, ref to 25°C −8.5 RDS(on) VGS = 10 V, ID = 97 A 4.2 gFS VDS = 10 V, ID = 97 A 146 Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance 2.5 4.5 V mV/°C 5 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 6300 Output Capacitance COSS Reverse Transfer Capacitance CRSS 13 Gate−Resistance RG 1.1 Total Gate Charge QG(TOT) 75 Threshold Gate Charge QG(TH) 18 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 10 Plateau Voltage VGP 5.4 V Output Charge QOSS 227 nC VGS = 0 V, f = 1 MHz, VDS = 75 V VGS = 10 V, VDS = 75 V; ID = 97 A VDD = 75 V, VGS = 0 V 1900 pF 2.2 W nC 31 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 32 VGS = 10 V, VDD = 75 V, ID = 97 A, RG = 4.7 W tf 14 ns 45 9.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 97 A TJ = 25°C VGS = 0 V, VDD = 75 V dIS/dt = 100 A/ms, IS = 97 A 0.96 1.2 V 92 ns 189 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTP5D0N15MC TYPICAL CHARACTERISTICS 10 V 6 7.0 V ID, DRAIN CURRENT (A) 8.0 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 300 6.0 V 225 150 VGS = 5.0 V 75 0 0 1 2 3 4 5 6 7 8 9 10 3 8V 7V 10 V 0 0 60 180 120 240 300 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 40 2.2 ID = 97 A VGS = 10 V 2.0 RDS(on), ON−RESISTANCE (mW) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID, DRAIN CURRENT (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 24 16 TJ = 125°C 8 TJ = 25°C 4 6 5 7 8 10 9 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, REVERSE DRAIN CURRENT (A) VDS = 10 V 180 120 TJ = 25°C 60 TJ = 150°C 2 ID = 97 A 32 0 100 125 150 175 240 ID, DRAIN CURRENT (A) 6V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.4 0 VGS = 5 V 3 TJ = −55°C 4 5 6 300 10 1 0.1 TJ = 150°C 0.01 0.001 7 VGS = 0 V 100 TJ = −55°C TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 NTP5D0N15MC 10 10K VDD = 25 V ID = 97 A 8 VDD = 50 V CISS VDD = 75 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 6 4 2 0 16 0 32 64 48 1 0.1 100 10 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 1M PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) CRSS VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 8 V RqJC = 0.7°C/W 50 25 75 100 125 100K 10K 1K 100 10 0.00001 175 150 0.0001 0.001 0.01 TC, CASE TEMPERATURE (°C) t, PULSE WIDTH (s) Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power 100 0.1 1 1000 TJ = 25°C ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 10 Qg, GATE CHARGE (nC) 50 TJ = 100°C TJ = 150°C 10 1 100 1 80 VGS = 10 V 0 COSS f = 1 MHz VGS = 0 V 150 100 1K 0.001 0.01 0.1 1 10 100 1000 10 ms 100 100 ms 10 1 0.1 1 ms TC = 25°C Single Pulse RqJC = 0.7°C/W RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 ms 100 ms/DC 10 100 200 tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Unclamped Inductive Switching Capability Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 NTP5D0N15MC ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 10 1 0.1 0.01 0.001 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 P DM 0.01 t1 Single Pulse 0.00001 t2 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Impedance www.onsemi.com 5 Notes: RqJC = 0.7°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AJ DATE 05 NOV 2019 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative