NTP6411ANG

NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 72 A, 14 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices V(BR)DSS Unit V V A 100 V http://onsemi.com ID MAX (Note 1) 72 A MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 72 51 188 285 −55 to +175 72 470 W A °C A mJ RDS(ON) MAX 14 mW @ 10 V N−Channel D G S 4 4 1 2 3 TO−220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C 1 THERMAL RESISTANCE RATINGS Parameter Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) Symbol RqJC RqJA Max 0.8 33 Unit °C/W 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 4 Drain MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain NTP 6411ANG AYWW 1 Gate 2 Drain 3 Source 1 Gate NTB 6411ANG AYWW 2 Drain 3 Source 6411AN = Specific Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 0 1 Publication Order Number: NTB6411AN/D NTB6411AN, NTP6411AN ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGP RG td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V, IS = 72 A, dIS/dt = 100 A/ms IS = 72 A TJ = 25°C TJ = 125°C Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VGS = 10 V, VDD = 80 V, ID = 72 A, RG = 6.2 W VGS = 10 V, VDS = 80 V, ID = 72 A VDS = 25 V, VGS = 0 V, f = 1 MHz VGS = 10 V, ID = 72 A VDS = 5 V, ID = 10 A VGS = 0 V, VDS = 100 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 100 113 1.0 100 $100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 8.6 12.7 24 4.0 V mV/°C 14 mW S 3700 550 200 100 4.0 16 47 5.2 3.1 pF nC V W ns SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.92 0.86 94 64 30 330 nC ns 1.3 V 16 144 107 157 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTB6411AN, NTP6411AN 160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 5.0 V VGS = 4.4 V 4 5 6.0 V 5.6 V TJ = 25°C 160 10 V 7.5 V 6.5 V ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20 0 2 TJ = 125°C TJ = −55°C 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 TJ = 25°C VDS w 10 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.04 Figure 2. Transfer Characteristics 0.035 ID = 72 A TJ = 25°C VGS = 10 V 0.03 RDS(on) TJ = 175°C TJ = 125°C 0.025 0.02 TJ = 25°C 0.01 TJ = −55°C 0.015 0.005 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 2.5 2 1.5 1 0.5 −50 1000 100000 Figure 4. On−Resistance versus Drain Current and Temperature VGS = 0 V ID = 72 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 TJ = 150°C TJ = 125°C −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 10 20 30 40 50 60 70 80 90 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 NTB6411AN, NTP6411AN VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 Crss 0 Coss 10 20 30 40 50 60 70 80 90 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Ciss 10 8 VDS 6 4 2 0 Qgs Qgd VGS 60 40 20 0 100 QT 100 80 VDS = 80 V ID = 72 A TJ = 25°C 0 20 40 60 80 Qg, TOTAL GATE CHARGE (nC) 100 Figure 7. Capacitance Variation 1000 VDS = 80 V ID = 72 A VGS = 10 V Figure 8. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 80 70 IS, SOURCE CURRENT (A) TJ = 25°C VGS = 0 V tf td(off) td(on) 60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.0 t, TIME (ns) 100 tr 10 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 1000 AVALANCHE ENERGY (mJ) 500 Figure 10. Diode Forward Voltage versus Current ID = 56 A ID, DRAIN CURRENT (A) 100 10 ms 100 ms 400 300 200 100 0 25 10 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 VGS = 10 V SINGLE PULSE TC = 25°C 1 0.1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE 175 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTB6411AN, NTP6411AN 1 D = 0.5 0.2 0.1 R(t) (°C/W) 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) 1 10 100 1000 Figure 13. Thermal Response ORDERING INFORMATION Device NTB6411ANG NTB6411ANT4G NTP6411ANG Package D2PAK (Pb−Free) D2PAK (Pb−Free) TO−220 (Pb−Free) Shipping† 50 Units / Rail 800 / Tape & Reel 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTB6411AN, NTP6411AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K C E −B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN M F VIEW W−W 1 F VIEW W−W 2 F VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 3.504 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS 2X 2X *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB6411AN, NTP6411AN PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 −T− B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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