NTP75N06

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Other names and brands may be claimed as the property of others. NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mW Features • These Devices are Pb−Free and are RoHS Compliant • NTBV Prefix for Automotive and Other Applications Requiring N−Channel D Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Typical Applications • • • • G Power Supplies Converters Power Motor Controls Bridge Circuits S MARKING DIAGRAMS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc VGS VGS "20 "30 ID ID 75 50 225 Adc PD 214 1.4 2.4 W W/°C W TJ, Tstg −55 to +175 °C EAS 844 mJ Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 75 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds December, 2012 − Rev. 3 4 TO−220 CASE 221A STYLE 5 Vdc IDM 1 Apk 2 75N06 AYWW 1 Gate 3 2 Drain 3 Source 4 Drain 4 1 2 D2PAK CASE 418B STYLE 2 75N06 AYWW 3 RqJC RqJA 0.7 62.5 TL 260 2 1 3 Drain Gate Source °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 4 Drain 1 75N06 A Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTP75N06/D NTP75N06, NTB75N06, NTBV75N06 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Drain−to−Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Unit 60 − 71 73 − − − − − − 10 100 − − ±100 2.0 − 2.8 8.0 4.0 − − 8.2 9.5 − − 0.72 0.63 0.86 − gFS − 40.2 − mhos Ciss − 3220 4510 pF Coss − 1020 1430 Crss − 234 330 td(on) − 16 25 OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 1) (VGS = 10 Vdc, ID = 37.5 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 1) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 75 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 1) Fall Time Gate Charge (VDS = 48 Vdc, ID = 75 Adc, VGS = 10 Vdc) (Note 1) ns tr − 112 155 td(off) − 90 125 tf − 100 140 QT − 92 130 Q1 − 14 − Q2 − 44 − VSD − − 1.0 0.9 1.1 − Vdc trr − 77 − ns ta − 49 − tb − 28 − QRR − 0.16 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (Note 1) (IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 75 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 1) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTP75N06, NTB75N06, NTBV75N06 120 VGS = 7 V 100 ID, DRAIN CURRENT (AMPS) VGS = 6.5 V VGS = 6 V VGS = 8 V 80 VGS = 5.5 V VGS = 9 V 60 40 VGS = 5 V 20 VGS = 4.5 V 0 1 0.015 2 4 3 120 100 80 60 40 TJ = 25°C 20 TJ = 100°C 4.5 5.5 6 Figure 2. Transfer Characteristics 0.015 VGS = 10 V TJ = 100°C 0.007 80 100 160 TJ = 25°C TJ = −55°C 0.005 60 140 0.011 0.007 0.005 40 7 TJ = 100°C 0.009 TJ = −55°C 20 6.5 VGS = 15 V 0.013 TJ = 25°C 0 5 Figure 1. On−Region Characteristics 0.009 120 140 0.003 160 ID, DRAIN CURRENT (AMPS) 0 20 10000 1.4 1.2 1 60 80 100 120 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = 37.5 A VGS = 10 V 1.6 40 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.011 2 3.5 3 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.013 0.003 VDS w 10 V 140 0 2.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 10 V 140 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 160 IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (AMPS) 160 VGS = 0 V TJ = 150°C 1000 TJ = 125°C TJ = 100°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTP75N06, NTB75N06, NTBV75N06 C, CAPACITANCE (pF) VDS = 0 V 8000 VGS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 TJ = 25°C Ciss 6000 Crss Ciss 4000 Coss 2000 Crss 0 10 5 VGS 0 VDS 5 15 10 20 25 Q1 Q2 6 4 2 0 ID = 75 A TJ = 25°C 0 10 20 30 40 50 60 70 80 90 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (AMPS) t, TIME (ns) VGS 8 80 tf 100 tr td(off) 10 td(on) VDS = 30 V ID = 75 A VGS = 5 V 1 10 70 VGS = 0 V TJ = 25°C 60 50 40 30 20 10 0 0.6 100 100 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variations vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 VGS = 20 V SINGLE PULSE TC = 25°C 10 ms 100 100 ms 1 ms 10 1 0.1 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (AMPS) QT 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V) 1000 1 12 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 ID = 75 A 800 600 400 200 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTP75N06, NTB75N06, NTBV75N06 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t, TIME (ms) 0.1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 1.0 10 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTP75N06G TO−220 (Pb−Free) 50 Units/Rail NTB75N06G D2PAK (Pb−Free) 50 Units/Rail NTB75N06T4G D2PAK (Pb−Free) 800 Tape & Reel NTBV75N06T4G* D2PAK (Pb−Free) 800 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 5 NTP75N06, NTB75N06, NTBV75N06 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NTP75N06, NTB75N06, NTBV75N06 PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE K C E −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. V W 4 1 2 A S 3 −T− SEATING PLANE K J G D 3 PL 0.13 (0.005) W H M T B STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN M VARIABLE CONFIGURATION ZONE DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 N R P U L L M L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTP75N06, NTB75N06, NTBV75N06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTP75N06/D