NTP8G206NG

NTP8G206N Power GaN Cascode Transistor 600 V, 150 mW Features • • • • Fast Switching Extremely Low Qrr Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) TYP 600 V 150 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±18 V ID 17 A Continuous Drain Current RqJC Steady State Power Dissipation – RqJC Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms Pulsed Drain Current N−Channel MOSFET D (3) 12 PD 96 W G (1) IDM 60 A TJ, TSTG −55 to +150 °C TL 260 °C S (2,4) Operating Junction and Storage Temperature Lead Temperature for Soldering Leads MARKING DIAGRAM & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 Source 4 THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 1.55 °C/W Junction−to−Ambient Steady State RqJA 62 °C/W TO−220 CASE 221A−09 STYLE 10 1 2 1 Gate 3 A Y WW G NTP8G206NG AYWW = Assembly Location = Year = Work Week = Pb−Free Package 3 Drain 2 Source ORDERING INFORMATION Device NTP8G206NG © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 2 1 Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NTP8G206N/D NTP8G206N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 1 mA 600 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Leakage Current Gate−to−Source Leakage Current IDSS VDS = 600 V, VGS = 0 V V TJ = 25°C 2.5 TJ = 150°C 8.0 VGS = ±18 V IGSS 90 mA ±100 nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 500 mA 2.1 2.6 V Static Drain-to-Source On Resistance RDS(on) VGS = 8 V, ID = 11 A, TJ = 25°C 150 180 mW VGS = 8 V, ID = 11 A, TJ = 175°C 340 1.6 DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective output capacitance, energy related (Note 3) Co(er) Effective output capacitance, time related (Note 4) Co(tr) Total Gate Charge pF 760 VDS = 480 V, VGS = 0 V, f = 1 MHz 44 5.0 VGS = 0 V, VDS = 0 to 480 V ID = constant, VGS = 0 V, VDS = 0 to 480 V Qg 64 105 6.2 Gate-to-Source Charge Qgs Gate-to-Drain Charge Qgd 2.2 td(on) 6.2 VDS = 100 V, ID = 11 A, VGS = 4.5 V 9.3 nC 2.1 SWITCHING CHARACTERISTICS (Note 2) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time tr td(off) VDD = 480 V, ID = 11 A, VGS = 10 V, RG = 2 W tf ns 4.5 9.7 4.0 SOURCE−DRAIN DIODE CHARACTERISTICS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IS = 11 A, VGS = 0 V TJ = 25°C VGS = 0 V, VDD = 400 V IS = 11 A, di/dt = 2000 A/ms 2.2 V 17 ns 53 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. 3. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 4. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS www.onsemi.com 2 NTP8G206N TYPICAL CHARACTERISTICS 40 60 VGS = 8 V TJ = 25°C 50 5V VGS = 8 V 30 40 5V 25 30 IDS (A) IDS (A) TJ = 175°C 35 4V 4V 20 15 20 10 10 3V 5 3V 0 2V 0 0 2 4 8 6 10 0 6 8 10 VDS (V) Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 3.0 ID = 12 A, VGS = 10 V VDS = 10 V 50 2.5 NORMALIZED RDS(on) TJ = 25°C 40 IDS (A) 4 VDS (V) 60 30 TJ = 175°C 20 2.0 1.5 1.0 0.5 10 0 2 0 4 2 6 8 0.0 10 0 25 50 75 VGS (V) 100 125 150 175 200 TJ (°C) Figure 3. Typical Transfer Characteristics Figure 4. Normalized On−Resistance 1000 12 CISS 10 COSS 8 C (pF) EOSS (mJ) 100 10 4 CRSS 2 VGS = 0 V f = 1 MHz 1 0 100 6 200 300 400 500 0 600 0 100 200 300 400 500 VDS (V) VDS (V) Figure 5. Typical Capacitance Figure 6. Typical COSS Stored Eneergy www.onsemi.com 3 600 NTP8G206N TYPICAL CHARACTERISTICS 100 IS = f(VSD) 40 25°C 50°C 75°C 100°C 125°C 150°C 35 IS (A) 30 25 TC = 25°C 10 20 TJ = 175°C 15 DC 5 ms IdS (A) 45 1 ms 1 100 ms 10 ms 10 5 0.1 0 0 1 2 4 3 5 6 7 8 0.1 1 10 1000 100 VSD (V) VSD (V) Figure 7. Forward Characteristics of Rev. Diode Figure 8. Safe Operating Area 100 1.4 TC = 80°C 1.2 10 1.0 Zth (°C/W) IdS (A) DC 5 ms 1 ms 1 100 ms 10 ms 0.8 D = 50% 0.6 0.4 D = 20% D = 10% 0.2 0.1 0.1 1 10 100 Single Pulse 0 0.01 0.00001 0.0001 0.001 1000 0.1 1 VSD (V) VSD (V) Figure 9. Safe Operating Area Figure 10. Transient Thermal Resistance www.onsemi.com 4 10 NTP8G206N VDS SiC Diode VGS 90% 10% tr td(on) td(off) ton Figure 11. Switching Time Test Circuit tf toff Figure 12. Switching Time Waveform i, V di F/dt trr IF tF tS t 10% I RRM QS IRRM QF di rr /dt 90% I RRM trr = t S + tF Q rr = Q S + Q Figure 13. Test Circuit for Reverse Diode Characteristics Figure 14. Diode Recovery Waveform www.onsemi.com 5 V RRM NTP8G206N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 10: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE SOURCE DRAIN SOURCE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTP8G206N/D